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Stability of mixed phase silicon thin film material under light soaking

Wang Yan Ren Hui-Zhi Hou Guo-Fu Guo Qun-Chao Zhu Feng Zhang De-Kun Sun Jian Xue Jun-Ming Zhao Ying Geng Xin-Hua Han Xiao-Yan

Stability of mixed phase silicon thin film material under light soaking

Wang Yan, Ren Hui-Zhi, Hou Guo-Fu, Guo Qun-Chao, Zhu Feng, Zhang De-Kun, Sun Jian, Xue Jun-Ming, Zhao Ying, Geng Xin-Hua, Han Xiao-Yan
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  • Received Date:  28 April 2005
  • Accepted Date:  06 June 2005
  • Published Online:  15 February 2006

Stability of mixed phase silicon thin film material under light soaking

  • 1. (1)南开大学光电子薄膜器件与技术研究所,光电信息技术科学教育部重点实验室,光电子薄膜器件与技术天津市重点实验室,天津 300071; (2)南开大学光电子薄膜器件与技术研究所,光电信息技术科学教育部重点实验室,光电子薄膜器件与技术天津市重点实验室,天津 300071;河北工业大学材料科学与工程学院,天津 300130

Abstract: Silicon thin films material with different crystalline ratio (Xc) have been deposited with varying silane content of source gases in the PECVD process. We have researched how hydrogen content affects the material and the relationship between micro-structure and optoelectronic properties. Light soaking experiment was then performed. By comparing the changes in the properties before and after irradiation, we conclude that the amorphous region is responsible to the degradation of the photoelectronic property. The mixed phase amorphous silicon degrades less and is more stable than component the common amorphous silicon. The highly crystallized silicon is stable against light soaking. The microcrystalline silicon near the threshold is not so stable as the highly crystallized one, but its optoelectronic property is more suitable than the others for making microcrystalline silicon solar cells.

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