Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Study on the annealing of Cd1-xZnxTe in In vapor

Li Wan-Wan Sun Kang

Study on the annealing of Cd1-xZnxTe in In vapor

Li Wan-Wan, Sun Kang
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3537
  • PDF Downloads:  1182
  • Cited By: 0
Publishing process
  • Received Date:  15 August 2005
  • Accepted Date:  21 December 2005
  • Published Online:  20 April 2006

Study on the annealing of Cd1-xZnxTe in In vapor

  • 1. 上海交通大学复合材料研究所,上海 200030

Abstract: In order to meet the requirements of the design of radiation detectors, CdZnTe (or Cd1-xZnxTe) wafers grown by vertical Bridgman method w ere annealed in the vapor of In. The nature of this treatment is a diffusion pro cess, thus it is meaningful to relate the change of resistivity to the diffusion parameters. A transformation model correlating resistivity and conduction type of CdZnTe with the main diffusion parameter —— diffusion coefficient——is put forward in this paper. Combining the model with the analysis of our experimenta l data (namely DIn = 5.17 10-9, 2.625×10-10 an d 3.455×10-11cm2·s-1), the values of the diff usion coefficient of In in Cd0.9Zn0.1Te at 1073, 973 and 873K have been given for the first time, which coincide closely with those in Cd Te given by different authors. With the data, the effect of annealing time on th e change of resistivity and conduction type for Cd0.9Zn0.1 Te slice, which is annealed in saturated In vapor at 1073, 973 and 873K, have be en simulated and good consistency acquired. This work suggests an alternative wa y to determine the diffusion coefficient in semiconductor material, and also ena bles us to analyze the diffusion process quantitatively and predict the annealin g result.

Catalog

    /

    返回文章
    返回