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Dielectric properties and leakage current of MgO/(Ba0.8Sr0.2)TiO3 heterostructured films prepared by sol-gel technique

Jia Jian-Feng Huang Kai Pan Qing-Tao Li Shi-Guo He De-Yan

Dielectric properties and leakage current of MgO/(Ba0.8Sr0.2)TiO3 heterostructured films prepared by sol-gel technique

Jia Jian-Feng, Huang Kai, Pan Qing-Tao, Li Shi-Guo, He De-Yan
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  • Received Date:  29 July 2005
  • Accepted Date:  03 November 2005
  • Published Online:  20 April 2006

Dielectric properties and leakage current of MgO/(Ba0.8Sr0.2)TiO3 heterostructured films prepared by sol-gel technique

  • 1. 兰州大学物理科学与技术学院,兰州 730000

Abstract: Ferroelectric MgO/(Ba0.8Sr0.2)TiO3 heterostruct ured films have been grown on LaNiO3/Si(100) substrates by an improve d sol-gel technique. The dielectric constant and the leakage current of (Ba 0.8Sr0.2)TiO3 films have been modified by MgO insert ion. The dramatic reduction in the leakage current has been attributed to the mi nute solid solubility of MgO in the (Ba0.8Sr0.2)TiO3 lattice and the high resistance of the MgO layers.

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