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Monte Carlo simulation of operating modes of semi-insulting GaAs photoconductive switches

Jia Wan-Li Ji Wei-Li Liu Kai Shi Wei

Monte Carlo simulation of operating modes of semi-insulting GaAs photoconductive switches

Jia Wan-Li, Ji Wei-Li, Liu Kai, Shi Wei
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  • Abstract views:  3601
  • PDF Downloads:  942
  • Cited By: 0
Publishing process
  • Received Date:  18 January 2007
  • Accepted Date:  23 March 2007
  • Published Online:  20 November 2007

Monte Carlo simulation of operating modes of semi-insulting GaAs photoconductive switches

  • 1. (1)西安理工大学应用物理系,西安 710054; (2)西安理工大学应用物理系,西安 710054;中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海 200050

Abstract: An ensemble Monte Carlo simulation method has been employed to study the operating modes of semi-insulated GaAs (SI-GaAs) photoconductive semiconductor switches (PCSS) excited by a femtosecond laser pulse and biased in an electrical field. The results show that, under a bias field lower than the Gunn threshold field (which is 4.2kV/cm for GaAs), or the optical pulse energy is below the optical threshold, the time-resolved current in the switch operates in the linear mode. When the bias field and triggering optical energy are respectively greater than the electrical and optical thresholds, the PCSS operates in the nonlinear mode. The simulation shows that when triggered by laser pulse with higher photon energy, the switch has lower optical threshold in the nonlinear mode. The mechanism of the nonlinear mode for the switch is concluded to be due to the inter-valley scattering of the photo-generated carriers, leading to local high field in the switch.

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