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The influence of distribution of Na+-dopant on the structure and dielectric properties of Ba0.25Sr0.75TiO3 thin film

Zhai Ji-Wei Yao Xi Zhou Qi-Gang

The influence of distribution of Na+-dopant on the structure and dielectric properties of Ba0.25Sr0.75TiO3 thin film

Zhai Ji-Wei, Yao Xi, Zhou Qi-Gang
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  • Received Date:  19 March 2007
  • Accepted Date:  19 April 2007
  • Published Online:  20 November 2007

The influence of distribution of Na+-dopant on the structure and dielectric properties of Ba0.25Sr0.75TiO3 thin film

  • 1. (1)同济大学 功能材料研究所,上海 200092; (2)同济大学功能材料研究所,上海 200092;乐山师范学院物理与电子信息科学系,四川乐山 614004

Abstract: Na+-doped and compositional graded doped Ba0.25Sr0.75TiO3 thin films were grown on Pt/Ti/SiO2/Si substrates by Sol-Gel technique. The dielectric properties of thin films were investigated as a function of Na+ doping level. It is revealed that with the increase of Na+ concentrations both the dielectric constant and the loss decrease continuously while the leakage current initially decreases (Na+< 2.5mol%) and then increases. The increase of leakage current may be caused by the formation of porous structure which was confirmed by field emission scanning microscopy (FE-SEM). The improvement of overall dielectric properties were achieved by using the compositional graded doping which results in a better microstructure in the film.

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