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Effect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma

Liang Rong-Qing Wei Yong-Xia Qian Xiao-Mei Yu Xiao-Zhu Ye Chao Ning Zhao-Yuan

Effect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma

Liang Rong-Qing, Wei Yong-Xia, Qian Xiao-Mei, Yu Xiao-Zhu, Ye Chao, Ning Zhao-Yuan
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  • Received Date:  19 June 2006
  • Accepted Date:  09 July 2006
  • Published Online:  05 January 2007

Effect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma

  • 1. (1)复旦大学现代物理研究所,上海 200433; (2)苏州大学物理科学与技术学院,江苏省薄膜材料实验室,苏州 215006

Abstract: Carbon-doping oxide materials (SiCOH films) with k of 2.62 are prepared by electron cyclotron resonance chemical vapor deposition (ECR-CVD) from the mixture of decamethylcyclopentasioxane (D5) and oxygen (O2). This paper investigates the effect of O2-doping on bonding configuration, dielectric property and leakage current of the SiCOH low dielectric constant films. The results show that the leakage current can be reduced obviously on the premise that dielectric constant k is kept at a lower value by small O2-doping amount. For the SiCOH film deposited under O2 flow of 3 cm3/min, the dielectric constant k as low as 2.62 and leakage current of 8.2×10-9 A/cm2 can be obtained.

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