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Strain-driven alloy decomposition of In0.15Ga0.85As well layers in InAs/In0.15Ga0.85As dots-in-a-well structure

Yang Yu Wang Chong Liu Zhao-Lin Chen Ping-Ping Cui Hao-Yang Xia Chang-Sheng Lu Wei

Strain-driven alloy decomposition of In0.15Ga0.85As well layers in InAs/In0.15Ga0.85As dots-in-a-well structure

Yang Yu, Wang Chong, Liu Zhao-Lin, Chen Ping-Ping, Cui Hao-Yang, Xia Chang-Sheng, Lu Wei
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  • Received Date:  25 January 2007
  • Accepted Date:  05 March 2007
  • Published Online:  20 September 2007

Strain-driven alloy decomposition of In0.15Ga0.85As well layers in InAs/In0.15Ga0.85As dots-in-a-well structure

  • 1. (1)云南大学工程技术研究院,昆明 650091; (2)云南大学工程技术研究院,昆明 650091;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083; (3)中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083

Abstract: Two InAs/In0.15Ga0.85As quantum dots-in-a-well (DWELL) samples have been grown by solid source molecular beam epitaxy (MBE). The increased size of InAs dots and more homogeneous dot-size distribution have been found in one InAs DWELL sample with growth optimized by changing both the growth temperature and the thickness in In0.15Ga0.85As well layers. The improved optical properties of this sample have also been confirmed by photoluminescence (PL) and piezomodulated reflectance (PzR) spectra. The numerical calculations based on effective mass approximation indicate that the increase of dot size and the improved optical properties are dominantly due to the strain driven alloy decomposition of In0.15Ga0.85As well layers.

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