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Exciton tunnelling in (CdZnTe,ZnSeTe)/ZnTe complex quantum wells

Zhang Zhen-Zhong Zhang Li-Gong Zheng Zhu-Hong Shen De-Zhen Jin Hua Liu Shu

Exciton tunnelling in (CdZnTe,ZnSeTe)/ZnTe complex quantum wells

Zhang Zhen-Zhong, Zhang Li-Gong, Zheng Zhu-Hong, Shen De-Zhen, Jin Hua, Liu Shu
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  • Received Date:  05 January 2008
  • Accepted Date:  02 February 2008
  • Published Online:  05 May 2008

Exciton tunnelling in (CdZnTe,ZnSeTe)/ZnTe complex quantum wells

  • 1. (1)中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,长春 130033; (2)中国人民公安大学安全防范系,北京 102416

Abstract: A new type of (CdZnTe,ZnSeTe)/ZnTe complex quantum wells was designed. Exciton tunneling process was investigated in this complex structure using absorption spectra, photoluminescence (PL) spectra and pump-probe measurements. The exciton decay time was measured in CdZnTe/ZnTe quantum well layers and ZnSeTe/ZnTe quantum well layers, respectively. And a fast exciton tunneling from CdZnTe/ZnTe quantum well to ZnSeTe/ZnTe quantum well was observed by transient differential trans mission. The tunneling time is 5.5ps.

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