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Study of the characteristics of organic thin film transistors based on different active layers of pentacene and CuPc thin films

Yuan Guang-Cai Xu Zheng Zhao Su-Ling Zhang Fu-Jun Jiang Wei-Wei Huang Jin-Zhao Song Dan-Dan Zhu Hai-Na Huang Jin-Ying Xu Xu-Rong

Study of the characteristics of organic thin film transistors based on different active layers of pentacene and CuPc thin films

Yuan Guang-Cai, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Jiang Wei-Wei, Huang Jin-Zhao, Song Dan-Dan, Zhu Hai-Na, Huang Jin-Ying, Xu Xu-Rong
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  • Received Date:  27 July 2007
  • Accepted Date:  31 March 2008
  • Published Online:  20 September 2008

Study of the characteristics of organic thin film transistors based on different active layers of pentacene and CuPc thin films

  • 1. 北京交通大学光电子技术研究所,北京 100044;北京交通大学发光与光信息技术教育部重点实验室,北京 100044

Abstract: The surface morphology and crystallization of pentacene and CuPc films deposited on SiO2 substrate are characterized by X-ray diffraction (XRD) and scaning electron microscopy (SEM). It was observed that the pentacene film has island structure, the sizes of islands were about 100nm. The pentacene has clearer orientation than CuPc. We also studied organic thin film transistors (OTFTs) with different active layers of pentacene and CuPc, fabricated by shadow mask to investigate the characteristics of the device. The active layers pentacene and CuPc have the thickness of 40nm, the thickness of gate insulator layer SiO2 is 250nm and the ratio of width to length (W/L) of device channel is 20. We analyzed the property of devices by Keithley 2410 I-V. The results presented here show that OTFTs devices in which pentacene and CuPc are used as active layer exhibited the field-effect mobility (μEF) of 1.201cm2/V·s and 0.0694cm2/V·s, threshold voltage (Vth) of -20V and -15V, and (on/off) current radio of 104 and 105, respectively.

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