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The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure

Zhang Jin-Cheng Zheng Peng-Tian Dong Zuo-Dian Duan Huan-Tao Ni Jin-Yu Zhang Jin-Feng Hao Yue

The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure

Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue
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  • Received Date:  24 September 2008
  • Accepted Date:  02 November 2008
  • Published Online:  20 May 2009

The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure

  • 1. 西安电子科技大学微电子学院,宽带隙半导体技术国防重点学科实验室,宽禁带半导体材料与器件教育部重点实验室,西安 710071

Abstract: The one-dimensional self-consistent simulation of the band diagram and carrier distribution of the AlGaN/GaN double hetero-structure is firstly carried out to research the effect of the thickness and Al content of the AlGaN back-barrier layer on the carrier distribution. Then the AlGaN/GaN double hetero-structure materials with different back-barrier layers were grown by low-pressure MOCVD method on c-plane sapphire substrate. The mercury probe CV measurement was carried out to verify the results of theoretical simulation. The results of theoretical simulation and experiment both indicate that with the increase of Al content and thickness of the AlGaN back-barrier layer, the two-dimensional electron Gas density becomes low in the main channel and high in the parasitic channel gradually.The increase of Al content and thickness of the AlGaN back-barrier layer effectively enhances the two-dimensional electron Gas confinement but simultaneity produces higher-density parasitic channel. So a compromise has to be made between the improvement of the two-dimensional electron Gas confinement and the restraint of the carrier density in parasitic channel in designing the double heterostructure.

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