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An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering

Ding Wan-Yu Xu Jun Lu Wen-Qi Deng Xin-Lu Dong Chuang

An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering

Ding Wan-Yu, Xu Jun, Lu Wen-Qi, Deng Xin-Lu, Dong Chuang
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  • Received Date:  05 August 2008
  • Accepted Date:  24 November 2008
  • Published Online:  20 June 2009

An XPS study on the structure of SiNx film deposited by microwave ECR magnetron sputtering

  • 1. (1)大连交通大学光电材料与器件研究所,大连 116028;大连理工大学三束材料改性国家重点实验室,大连 116024; (2)大连理工大学三束材料改性国家重点实验室,大连 116024

Abstract: Hydrogen-free SiNx films were deposited at N2 flow rate ranging from 1 sccm to 20 sccm by microwave electron cyclotron resonance plasma enhanced unbalance magnetron sputtering system. We studied the influence of N2 flow rate on the structural characteristics of deposited films in chemical structure, stoichiometry, composition at different depths in film, and hardness by using X-ray photoelectron spectroscopy and nano-indantation. The results indicate that the films deposited at low N2 flow rate are Si-rich structure. The films deposited at 2 sccm N2 flow rate show an excellent stoichiometry with 94.8% Si—N bond content and uniformity of composition in different depths. At the same time, the films display the highest hardness value of 22.9 GPa. The films deposited at high N2 flow rate contain too much N—Si—O bond and Si—O bond, which is caused by chemical absorption both on and in film in atmosphere. The films present N-rich structure. In this situation, the films display poor mechanical properties with hardness of only 12 GPa.

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