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Effect of oxygen on CdS polycrystalline thin films prepared in ambient of Ar and O2 by close spaced sublimation technology

Feng Liang-Huan Cai Ya-Ping Li Bing Zhang Jing-Quan Zheng Jia-Gui Lu Tie-Cheng Xia Geng-Pei

Effect of oxygen on CdS polycrystalline thin films prepared in ambient of Ar and O2 by close spaced sublimation technology

Feng Liang-Huan, Cai Ya-Ping, Li Bing, Zhang Jing-Quan, Zheng Jia-Gui, Lu Tie-Cheng, Xia Geng-Pei
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  • Received Date:  09 July 2008
  • Accepted Date:  13 January 2009
  • Published Online:  20 September 2009

Effect of oxygen on CdS polycrystalline thin films prepared in ambient of Ar and O2 by close spaced sublimation technology

  • 1. (1)四川大学太阳能材料与器件研究所,成都 610064; (2)四川大学太阳能材料与器件研究所,成都 610064;四川大学物理系,辐射物理及技术教育部重点实验室,成都 610064

Abstract: In this paper,CdS polycrystalline thin films were prepared with the close-spaced sublimation (CSS) technology. In the deposition process,a controlled ambient of Ar and O2 mixture was used. The effect of oxygen on the microstructure,composition,morphology as well as optical and electrical properties of CdS thin films were studied systemically by XRD,XPS,AFM,UV-VIS and four-probe array method. The results showed that the CSS-grown CdS thin film has the hexagonal structure with crystallite size about 40 nm and the composition of them were rich in S. The impurity oxygen atoms mixed into CdS thin films and partly formed CdO,and with the increase of O2 concentration the chemical composition tinds more closely to the ideal stoichiometric proportion of CdO,the optical gap of thin films broadened and the ratio of photoconductivity to darkconductivity increased. Fortunately these effects are benefitial to CdS thin films for the photovoltaic application as a window layer.Additionally,it view of CdS/CdTe interface,we investigated the influence of oxygen on the cross-section morphology of CdS/CdTe thin films and the spectral response (SR) of the device. Then the results indicated that with the increase of O2 concentration in deposition ambient,the interdiffusion between CdS and CdTe decreased,and the SR of device in the range from 500 nm to 600 nm increased.We believe that the oxygen in CSS-grown CdS thin films plays a very important role in two aspects,firstly in improving the quality of CdS thin films for photovoltaic application,secondly in optimizing the CdS/CdTe interfacial properties in the CdTe solar cells.

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