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Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy

Shao Zheng-Zheng Wang Xiao-Feng Zhang Xue-Ao Chang Sheng-Li

Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy

Shao Zheng-Zheng, Wang Xiao-Feng, Zhang Xue-Ao, Chang Sheng-Li
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  • Received Date:  22 March 2009
  • Accepted Date:  22 May 2009
  • Published Online:  15 January 2010

Piezoelectric discharge characteristic of ZnO nanorod studied with atomic force microscopy

  • 1. 国防科技大学理学院物质与材料科学实验中心,长沙 410073

Abstract: Piezoelectric discharge characteristic of semiconductor ZnO nanorod was studied with atomic force microscope in contact mode. The c-axial orientation ZnO nanorod array film was fabricated with two-step wet-chemical method. Electric pulses were got when Pt coated probe contact-scans the ZnO nanorod, their peak value reaches 120 pA. The electric pulse is related with the topography of ZnO nanorod and has a time duration of 30 ms. The contact of Pt coated probe and ZnO nanorod behaves as a Schottky diode. The I-V curve showed the piezoelectric voltage must be larger than 03 V to drive Schottky diode. The resistance of Schottky contact has a magnitude of GΩ order during piezoelectric discharge, which is the major factor impacting the output of piezoelectric potential.

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