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Molecular dynamics simulation of temperature effects on CF+3 etching of Si surface

Qin You-Min Zhao Cheng-Li He Ping-Ni Gou Fu-Jun Ning Jian-Ping Lü Xiao-Dan Bogaerts A.

Molecular dynamics simulation of temperature effects on CF+3 etching of Si surface

Qin You-Min, Zhao Cheng-Li, He Ping-Ni, Gou Fu-Jun, Ning Jian-Ping, Lü Xiao-Dan, Bogaerts A.
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  • Received Date:  11 June 2009
  • Accepted Date:  03 February 2010
  • Published Online:  05 May 2010

Molecular dynamics simulation of temperature effects on CF+3 etching of Si surface

  • 1. (1)Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China; (2)Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China, Material and Metallurgy, College of Guizhou University, Guiyang 550003, China; (3)Key Laboretory of Radiation Physics and Technology Ministry of Education, Chengdu 610064, China, Foundation of Material Institute for Plasma Physics, 3439 MN Nieuwegein, Netherlands; (4)Research Group PLASMANT, University of Antwerp, B-2610

Abstract: Molecular dynamics method was employed to investigate the effects of the reaction layer formed near the surface region on CF+3 etching of Si at different temperatures. The simulation results show that the coverages of F and C are sensitive to the surface temperature. With increasing temperature, the physical etching is enhanced, while the chemical etching is weakened. It is found that with increasing surface temperature, the etching rate of Si increases. As to the etching products, the yields of SiF and SiF2 increase with temperature, whereas the yield of SiF3 is not sensitive to the surface temperature. And the increase of the etching yield is mainly due to the increased desorption of SiF and SiF2. The comparison shows that the reactive layer plays an important part in the subsequeat impacting, which enhances the etching rate of Si and weakens the chemical etching intensity.

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