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Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film

Liu Li-Ying Zhang Jia-Liang Guo Qing-Chao Wang De-Zhen

Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film

Liu Li-Ying, Zhang Jia-Liang, Guo Qing-Chao, Wang De-Zhen
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  • Received Date:  13 June 2009
  • Accepted Date:  25 August 2009
  • Published Online:  15 April 2010

Diagnostics of the atmospheric pressure plasma jets for plasma enhanced chemical vapor deposition of polycrystalline silicon thin film

  • 1. 大连理工大学物理与光电工程学院,大连 116023

Abstract: The characteristics of the radio frequency plasma jets at atmospheric pressure in Ar/SiCl4/H2 gas mixture were studied in this paper by using optical emission spectroscopy. Firstly, the electron excitation temperature of plasmas was calculated from the Si atom spectral emission using Boltzmann plots, and then, based on the temperature, the number density of the Si atoms in the plasmas and the dissociation ratio of the SiCl4 were estimated. Finally, the dependence of the excitation temperature, the number density of the Si atoms and the dissociation ratio of the SiCl4 on the discharge power and the gas flow rate were presented.

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