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Preparation of multiferroic of Bi0.85Nd0.15FeO3 thin films prepared by sol-gel method

Tu Rong Goto Takashi Li Chao Wang Chuan-Bin Shen Qiang Zhang Lian-Meng Guo Dong-Yun

Preparation of multiferroic of Bi0.85Nd0.15FeO3 thin films prepared by sol-gel method

Tu Rong, Goto Takashi, Li Chao, Wang Chuan-Bin, Shen Qiang, Zhang Lian-Meng, Guo Dong-Yun
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  • Received Date:  01 June 2009
  • Accepted Date:  02 December 2009
  • Published Online:  05 April 2010

Preparation of multiferroic of Bi0.85Nd0.15FeO3 thin films prepared by sol-gel method

  • 1. (1)Institute for Materials Research,Tohoku University,Sendai 980-8577,Japan; (2)State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China; (3)State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan 430070, China; Institute for Materials Research,Tohoku University,Sendai 980-8577,Ja

Abstract: The Bi0.85Nd0.15FeO3 thin films were prepared on the Pt/Ti/SiO2/Si substrates by Sol-gel method.The effect of annealing temperature on formation of Bi0.85Nd0.15FeO3 phase was investigated. It was found that the Bi0.85Nd0.15FeO3 phase was formed and coexisted with the impurity phase when the films annealed at 450 ℃. The single-phase Bi0.85Nd0.15FeO3 films were obtained,when they were annealed at 500—600 ℃. Bi0.85Nd0.15FeO3 films annealed at 600 ℃ had saturated magnetization about 44.8 emu/cm3, remnant polarization (2Pr) about 16.6 μC/cm2,dielectric constant 145 and dielectric loss 0.032(1 MHz), respectively.

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