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High-efficiency blue fluorescence organic light-emitting diodes with DPVBi inserted in the doping emmision layer

Wang Jin Zhao Yi Xie Wen-Fa Duan Yu Chen Ping Liu Shi-Yong

High-efficiency blue fluorescence organic light-emitting diodes with DPVBi inserted in the doping emmision layer

Wang Jin, Zhao Yi, Xie Wen-Fa, Duan Yu, Chen Ping, Liu Shi-Yong
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  • We have fabricated high-efficiency blue fluorescence organic light-emitting diodes(OLEDs) with DPVBi inserted in the doping emmision layer(EML). The OLEDs with a configuration of ITO/2T-NATA/NPB/DPVBi:DSA-ph(inserted with DPVBi thin layer)/Alq3/LiF/Al are fabricated, using 2T-NATA as hole injection layer, NPB as hole transport layer, DPVBi:DSA-ph as emission layer and Alq3 as electron transport layer, respectively. The DPVBi thin layer inserted in EML leads to an increase in device efficiency as a results of an improvement of the balanced carrier injection, which results in an efficient radiative recombination in the emission zone. In addition, DPVBi ability of hole blocking can also be another reason for the improvement on the luminous gain. Hence, high radiative recombination is expected to take place in DPVBi:DSA-ph emission layer. This high efficient recombination results in high brightness and enhanced efficiency in our OLEDs. By optimizing the location and the number of layers of DPVBi thin layer, a maximum current efficiency of 6.77 cd/A is achieved at a current density 6.84 mA/cm2, which is nearly 67.6% more than that of non-inserted device. At a luminance of 1000 cd/m2, the current efficiency of the optimizing device is 6.49 cd/A at 6.7 V with a CIE (0.179, 0.317).
    • Funds:
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    Hosokawa C, Tokailin H, Higashi H, Kusumoto T 1993 Appl. Phys. Lett. 63 1322

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  • [1]

    Tang C W, Vanslyke S A 1987 Appl. Phys. Lett. 51 913

    [2]

    Baldo M A, O'Brien D F, You Y, Shoustikov A, Sibley S, Thompson M E, Forrest S R 1998 Nature 395 151

    [3]
    [4]

    D'Andrade B W, Forrest S R 2004 Adv. Mater. 16 1585

    [5]
    [6]

    Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lussem B, Leo K 2009 Nature 459 234

    [7]
    [8]

    Zhang X L, Yang S Y, Lou Z D, Hou Y B 2007 Acta Phys. Sin. 56 1632(in Chinese) [张秀龙、 杨盛谊、 娄志东、 侯延冰 2007 物理学报 56 1632]

    [9]
    [10]
    [11]

    Wang J, Wei X Q, Rao H B, Cheng J B, Jiang Y D 2007 Acta Phys. Sin. 56 1156(in Chinese) [王 军、 魏孝强、 饶海波、 成建波、 蒋亚东 2007 物理学报 56 1156]

    [12]
    [13]

    Sun Y R, Giebink N C, Kanno H, Ma B W, Thompson M E, Forrest S R 2006 Nature 440 908

    [14]

    Wu X M, Hua Y L, Yin S G, Zhang G H, Hui J L, Zhang L J, Wang Y 2008 Acta Phys. Sin. 57 1150(in Chinese) [吴晓明、 华玉林、 印寿根、 张国辉、 惠娟利、 张丽娟、 王 宇 2008 物理学报 57 1150]

    [15]
    [16]

    Adachi C, Baldo M A, Forrest S R, Lamansky S, Thompson M E, Kwong R C 2001 Appl. Phys. Lett. 78 1622

    [17]
    [18]
    [19]

    Adachi C, Baldo M A, Forrest S R 2000 J. Appl. Phys. 87 8049

    [20]
    [21]

    Baek H I, Lee C 2008 J Appl. Phy. 103 4510

    [22]
    [23]

    Jianmin S, Eric F, David M, Dave C, Steve M B, Kenneth D, Bipin S, Neckers D C 2005 SID Symposium Digest of Technical Papers 36 1760

    [24]
    [25]

    Ran G Z, Wu Z L, Ma G L, Xu A G, Qiao Y P, Wu S K, Yang B R, Qin G G 2004 Chem. Phys. Lett. 400 401

    [26]

    Kim S Y, Hong K, Choi H W, Kim K Y, Tak Y H, Lee J L 2009 J. Electrochem. Soc. 156 J57

    [27]
    [28]

    Han K, Yi Y, Song W J, Cho S W, Jeon P E, Lee H, Whang CN, Jeong K 2008 Org. Electron 9 30

    [29]
    [30]

    Zou J H, Tao H, Wu H B, Peng J B 2009 Acta Phys. Sin. 58 1224(in Chinese)[邹建华、 陶 洪、 吴宏滨、彭俊彪 2009 物理学报 58 1224]

    [31]
    [32]

    Tokailin H, Higashi H, Hosokawa C, Kusumoto T 1993 Proc. SPIE 38 1910

    [33]
    [34]
    [35]

    Cheon K O, Shinar J 2004 Appl. Phys. Lett. 84 1201

    [36]

    Xie W F, Hou J Y, Liu S Y 2003 Semicond. Sci. Technol. 18 L42

    [37]
    [38]
    [39]

    Haskal E I 1997 Synth. Met. 91 187

    [40]
    [41]

    Naka S, Okada H, Onnagawa H, Yamaguchi Y,Tsutsui T 2000 Synth. Met. 111-112 331

    [42]
    [43]

    Wang G D, Wang L, Jiang W L, Wang L Z, Wang J, Han Q, Ding G Y 2007 Chin. J. Lumin. 28 189(in Chinese) [王广德、 王 立、 姜文龙、 王立忠、 汪 津、 韩 强、 丁桂英 2007 发光学报 28 189]

    [44]
    [45]

    Lee M T, Chen H H, Liao C H, Tsai C H, Chen C H 2004 Appl. Phys. Lett. 85 3301

    [46]
    [47]

    Zheng T, Choy W C H 2008 J Phys. D: Appl. Phys. 41 5103

    [48]
    [49]

    Hosokawa C, Tokailin H, Higashi H, Kusumoto T 1993 Appl. Phys. Lett. 63 1322

    [50]

    Matsumura M, Ito A, Miyamae Y 1999 Appl. Phys. Lett. 75 1042

    [51]
    [52]
    [53]

    Hosokawa C, Higashi H, Nakamura H Kusumoto T 1995 Appl. Phys. Lett. 67 3853

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Publishing process
  • Received Date:  30 December 2010
  • Accepted Date:  15 January 2011
  • Published Online:  15 October 2011

High-efficiency blue fluorescence organic light-emitting diodes with DPVBi inserted in the doping emmision layer

  • 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;
  • 2. College of Information Technology, Jinlin Normal University, Siping 136000, China

Abstract: We have fabricated high-efficiency blue fluorescence organic light-emitting diodes(OLEDs) with DPVBi inserted in the doping emmision layer(EML). The OLEDs with a configuration of ITO/2T-NATA/NPB/DPVBi:DSA-ph(inserted with DPVBi thin layer)/Alq3/LiF/Al are fabricated, using 2T-NATA as hole injection layer, NPB as hole transport layer, DPVBi:DSA-ph as emission layer and Alq3 as electron transport layer, respectively. The DPVBi thin layer inserted in EML leads to an increase in device efficiency as a results of an improvement of the balanced carrier injection, which results in an efficient radiative recombination in the emission zone. In addition, DPVBi ability of hole blocking can also be another reason for the improvement on the luminous gain. Hence, high radiative recombination is expected to take place in DPVBi:DSA-ph emission layer. This high efficient recombination results in high brightness and enhanced efficiency in our OLEDs. By optimizing the location and the number of layers of DPVBi thin layer, a maximum current efficiency of 6.77 cd/A is achieved at a current density 6.84 mA/cm2, which is nearly 67.6% more than that of non-inserted device. At a luminance of 1000 cd/m2, the current efficiency of the optimizing device is 6.49 cd/A at 6.7 V with a CIE (0.179, 0.317).

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