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Host sensitized infrared quantum cutting of Er0.1Gd0.9VO4 crystal

Chen Xiao-Bo Xu Yi-Zhuang Zhang Chun-Lin Zhang Hui-Min Zhang Yun-Zhi Zhou Gu Li Song

Host sensitized infrared quantum cutting of Er0.1Gd0.9VO4 crystal

Chen Xiao-Bo, Xu Yi-Zhuang, Zhang Chun-Lin, Zhang Hui-Min, Zhang Yun-Zhi, Zhou Gu, Li Song
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  • The infrared quantum cutting phenomena of Er0.1Gd0.9VO4 crystal are studied in the present article. An interesting host sensitized infrared quantum cutting phenomenon is found, that is, there is a strong and broad excitation peak at 337.0 nm wavelength for its excitation spectrum of 1537.5 nm 4I13/24I15/2 infrared fluorescence. It can be recognized that the 337.0 nm excitation peak corresponds to the absorption of host GdVO4 crystal. Meanwhile, it is found that the integral fluorescence intensity of 1537.5 nm 4I13/24I15/2 infrared fluorescence, when the host absorption band is excited by 337.0 nm light, is about ten times larger than that of the sum of all other fluorescence intensities. Its infrared quantum cutting efficiency is similar to that of the excited 2H11/2 energy level and larger than that of others.
    • Funds:
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    Yang G Z 1995 Optical Physics (Beijing : Science Press) (in Chinese) [杨国桢 1995 光物理科学(北京:科学出版社)]

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    Wegh R T, Donker H, Oskam K D, and Meijerink A 1999 Science 283 663

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    Vergeer P, Meijerink A 2005 Physical Review B 71 014119

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    Matsui T, Ogata K, Isomura M, Kondo M 2006 Journal of Non-Crystalline Solids 352 1255

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    Van der Ende B M, Aarts L, Meijerink A 2009 Advanced Materials 21 3073

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    Reisfeld R 1977 Lasers and excited states of rare-earth (New York: Springer-Verlag, Berlin Heidelberg)

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    Zhou J J, Teng Y, Ye S, Xu X Q, Qiu J R 2010 Optics Express 18 21663

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    Chen D Q, Wang Y S, Yu Y L, Huang P, Weng F Y 2008 Optics Letters 33 1884

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    Richards B S 2006 Solar Energy Materials Solar Cells 90 1189

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    Eliseeva S V, Bunzli J C G 2010 Chemical Society Reviews 39 189

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    Zaguniennyi A I, Ostoumov V G, Shcherbakov I A, Jensen T, Meyn J P, and Huber G 1992 Sov. J. Quant. Electron.  22 1071

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    Xu X R, Shu M Z 2003 Science of Luminescence and Luminescent Material (Beijing: The Publish Center of Material Science and Engineering) (in Chinese)[徐叙瑢、 苏勉曾 2003 发光学与发光材料 (北京: 材料科学与工程出版中心)]

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    Carnall W T, Fieldd R, Rajnank K T 1968 J. Chem. Phys. 49 4424

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    Rodriguez V D, Tikhomirov V K, Mendez-Ramos J 2010 Solar Energy Materials and Solar Cells 94 1612

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    Chen J D, Guo H, Li Z Q, Zhang H, Zhuang Y X 2010 Opt. Materials 32 998

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    Song Z F, Lian S R, Wang S K 1982 Acta Phys. Sin. 31 772 (in Chinese)[宋增福、 连绍仁、 王淑坤 1982 物理学报 31 772]

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    Wei X T, Zhao J B, Chen Y H, Yin M, Li Y 2010 Chin. Phys. B 19 077804

    [34]

    Wang N Y, Zhang L 2001 Acta Phys. Sin. 50 693 [王乃彦、 张 路 2001 物理学报 50 693]

    [35]
    [36]

    Chen X Y, Luo Z D 1998 Chin. Phys. 7 773

    [37]
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    Zhang X G, Yang B J 2002 Acta Phys. Sin. 51 2745 (in Chinese)[张晓光、 杨伯君 2002 物理学报 51 2745]

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    Yang G J, Huang Z Q, Hu G 1991 Acta Phys. Sin. 40 1575 (in Chinese) [杨国建、 黄祖洽、 胡 岗 1991 物理学报 40 1575]

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    Chen Z J, Chen H Y, Gong Q H 1999 Acta Phys. Sin. 48 477 (in Chinese) [陈志坚、 陈慧英、 龚旗煌 1999 物理学报 48 477]

    [43]
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    Zhao Z X 1979 Acta Phys. Sin. 28 222 (in Chinese) [赵忠贤 1979 物理学报 28 222]

  • [1]

    Yang G Z 1995 Optical Physics (Beijing : Science Press) (in Chinese) [杨国桢 1995 光物理科学(北京:科学出版社)]

    [2]

    Wegh R T, Donker H, Oskam K D, and Meijerink A 1999 Science 283 663

    [3]
    [4]

    Vergeer P, Meijerink A 2005 Physical Review B 71 014119

    [5]
    [6]
    [7]

    Matsui T, Ogata K, Isomura M, Kondo M 2006 Journal of Non-Crystalline Solids 352 1255

    [8]
    [9]

    Van der Ende B M, Aarts L, Meijerink A 2009 Advanced Materials 21 3073

    [10]
    [11]

    Reisfeld R 1977 Lasers and excited states of rare-earth (New York: Springer-Verlag, Berlin Heidelberg)

    [12]
    [13]

    Zhou J J, Teng Y, Ye S, Xu X Q, Qiu J R 2010 Optics Express 18 21663

    [14]
    [15]

    Chen D Q, Wang Y S, Yu Y L, Huang P, Weng F Y 2008 Optics Letters 33 1884

    [16]

    Richards B S 2006 Solar Energy Materials Solar Cells 90 1189

    [17]
    [18]
    [19]

    Eliseeva S V, Bunzli J C G 2010 Chemical Society Reviews 39 189

    [20]

    Zaguniennyi A I, Ostoumov V G, Shcherbakov I A, Jensen T, Meyn J P, and Huber G 1992 Sov. J. Quant. Electron.  22 1071

    [21]
    [22]

    Xu X R, Shu M Z 2003 Science of Luminescence and Luminescent Material (Beijing: The Publish Center of Material Science and Engineering) (in Chinese)[徐叙瑢、 苏勉曾 2003 发光学与发光材料 (北京: 材料科学与工程出版中心)]

    [23]
    [24]

    Carnall W T, Fieldd R, Rajnank K T 1968 J. Chem. Phys. 49 4424

    [25]
    [26]

    Rodriguez V D, Tikhomirov V K, Mendez-Ramos J 2010 Solar Energy Materials and Solar Cells 94 1612

    [27]
    [28]

    Chen J D, Guo H, Li Z Q, Zhang H, Zhuang Y X 2010 Opt. Materials 32 998

    [29]
    [30]
    [31]

    Song Z F, Lian S R, Wang S K 1982 Acta Phys. Sin. 31 772 (in Chinese)[宋增福、 连绍仁、 王淑坤 1982 物理学报 31 772]

    [32]
    [33]

    Wei X T, Zhao J B, Chen Y H, Yin M, Li Y 2010 Chin. Phys. B 19 077804

    [34]

    Wang N Y, Zhang L 2001 Acta Phys. Sin. 50 693 [王乃彦、 张 路 2001 物理学报 50 693]

    [35]
    [36]

    Chen X Y, Luo Z D 1998 Chin. Phys. 7 773

    [37]
    [38]

    Zhang X G, Yang B J 2002 Acta Phys. Sin. 51 2745 (in Chinese)[张晓光、 杨伯君 2002 物理学报 51 2745]

    [39]
    [40]

    Yang G J, Huang Z Q, Hu G 1991 Acta Phys. Sin. 40 1575 (in Chinese) [杨国建、 黄祖洽、 胡 岗 1991 物理学报 40 1575]

    [41]
    [42]

    Chen Z J, Chen H Y, Gong Q H 1999 Acta Phys. Sin. 48 477 (in Chinese) [陈志坚、 陈慧英、 龚旗煌 1999 物理学报 48 477]

    [43]
    [44]
    [45]

    Zhao Z X 1979 Acta Phys. Sin. 28 222 (in Chinese) [赵忠贤 1979 物理学报 28 222]

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Publishing process
  • Received Date:  28 December 2010
  • Accepted Date:  28 January 2011
  • Published Online:  15 October 2011

Host sensitized infrared quantum cutting of Er0.1Gd0.9VO4 crystal

  • 1. Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing 100875, China;
  • 2. The Chemistry and the Molecular Engineer College, Peking University, Beijing 100871, China;
  • 3. Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China

Abstract: The infrared quantum cutting phenomena of Er0.1Gd0.9VO4 crystal are studied in the present article. An interesting host sensitized infrared quantum cutting phenomenon is found, that is, there is a strong and broad excitation peak at 337.0 nm wavelength for its excitation spectrum of 1537.5 nm 4I13/24I15/2 infrared fluorescence. It can be recognized that the 337.0 nm excitation peak corresponds to the absorption of host GdVO4 crystal. Meanwhile, it is found that the integral fluorescence intensity of 1537.5 nm 4I13/24I15/2 infrared fluorescence, when the host absorption band is excited by 337.0 nm light, is about ten times larger than that of the sum of all other fluorescence intensities. Its infrared quantum cutting efficiency is similar to that of the excited 2H11/2 energy level and larger than that of others.

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