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Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope

Qiu Yun-Fei Du Wen-Han Wang Bing

Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope

Qiu Yun-Fei, Du Wen-Han, Wang Bing
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  • SrTiO3 ultra-thin film was deposited on the Sr/Si(001) surface using pulsed laser deposition (PLD) at room temperature and studied using scanning tunneling microscopy (STM). After annealing at 660 ℃ for about 60 minutes in ultrahigh vacuum (UHV), nanosize islands were formed on the Sr/Si(001) surface. High resolution STM images and dI/dV mapping of islands on Sr/Si(001) were obtained. The islands can be attributed to TiSi2 islands with C49 and C54 structures. The existence of Sr on Si is not sufficient to prevent the reaction between Si and Ti in preparation of ultra-thin SrTiO3 films.
    • Funds:
    [1]

    Nakagawara O, Kobayashi M, Yoshino Y, Katayama Y, Tabata H, Kawai T 1995 J. Appl. Phys. 78 7226

    [2]

    J H 2005 Chin. Phys. 14 2352

    [3]

    McKee R A, Walker F J, Chisholm M F 1998 Phys. Rev. Lett. 81 3014

    [4]

    Tambo T, Maeda K, Shimizu A, Tatsuyama C 1999 J. Appl. Phys. 86 3213

    [5]

    Yu Z, Ramdani J, Curless J A, Finder J M, Overgaard C D, Droopad R, Eisenbeiser K W, Hallmark J A, Ooms W J, Conner J R, Kaushik V S 2000 J. Vac. Sci. Technol. B 18 1653

    [6]

    Eisenbeiser K, Finder J M, Yu Z, Ramdani J, Curless J A, Hallmark J A, Droopad R, Ooms W J, Salem L, Bradshaw S, Overgaard C D 2000 Appl. Phys. Lett. 76 1324

    [7]

    Ahmet P, Koida T, Takakura M, Nakajima K, Yoshimoto M, Koinuma H, Tanaka M, Takeguchi M, Chikyow T 2002 Appl. Surf. Sci. 189 307

    [8]

    Wei Y, Hu X M, Liang Y, Jordan D C, Craigo B, Droopad R, Yu Z, Demkov A, Edwards J L, Ooms W J 2002 J. Vac. Sci. Technol. B 20 1402

    [9]

    McKee R A, Walker F J, Nardelli M B, Shelton W A, Stocks G M 2003 Science 300 1726

    [10]

    Zhang X, Demkov A A, Li H, Hu X, Wei Y, Kulik J 2003 Phys. Rev. B 68 125323

    [11]

    Li H, Hu X, Wei Y, Yu Z, Zhang X, Droopad R, Demkov A A, Edwards J, Moore K, Ooms W, Kulik J, Fejes P 2003 J. Appl. Phys. 93 4521

    [12]

    Forst C J, Ashman C R, Schwarz K, Blochl P E 2004 Nature 427 53

    [13]

    Yakovkin I N, Gutowski M 2004 Phys. Rev. B 70 165319

    [14]

    Yu Z, Liang Y, Overgaard C, Hu X, Curless J, Li H, Wei Y, Craigo B, Jordan D, Droopad R, Finder J, Eisenbeiser K, Marshall D, Moore K, Kulik J, Fejes P 2004 Thin Solid Films 462-463 51

    [15]

    He J Q, Jia C L, Vaithyanathan V, Schlom D G, Schubert J, Gerber A, Kolhstedt H H, Wang R H 2005 J. Appl. Phys. 97 104921

    [16]

    Kourkoutis L F, Hellberg C S, Vaithyanathan V, Li H, Parker M K, Andersen K E, Schlom D G, Muller D A 2008 Phys. Rev. Lett. 100 036101

    [17]

    Mi S B, Jia C L, Vaithyanathan V, Houben L, Schubert J, Schlom D G, Urban K 2008 Appl. Phys. Lett. 93 101913

    [18]

    Wang X F, Wang J, Li Q, Moreno M S, Zhou X Y, Dai J Y, Wang Y, Tang D 2009 J. Phys. D: Appl. Phys. 42 085409

    [19]

    Ma J H, Sun J L, Meng X J, Lin T, Shi F W, Chu J H 2005 Acta Phys. Sin. 54 1390 (in Chinese) [马建华、 孙璟兰、 孟祥建、 林 铁、 石富文、 褚君浩 2005 物理学报 54 1390]

    [20]

    Ma J H, Meng X J, Lin T, Liu S J, Zhang X D, Sun J L, Chu

    [21]

    Mann R W, Clevenger L A, Agnello P D, White F R 1995 IBM J. Res. Dev. 39 403

    [22]

    Wang T, Oh S Y, Lee W J, Kim Y J, Lee H D 2006 Appl. Surf. Sci. 252 4943

    [23]

    Alessandrino M S, Privitera S, Grimaldi M G, Bongiorno C, Pannitteri S, La Via F 2004 J. Appl. Phys. 95 1977

    [24]

    Jeon H, Yoon G, Nemanich R J 1997 Thin Solid Films 299 178

    [25]

    Yang W, Jedema F J, Ade H, Nemanich R J 1997 Thin Solid Films 308 627

    [26]

    Ezoe K, Kuriyama H, Yamamoto T, Ohara S, Matsumoto S 1998 Appl. Surf. Sci. 130 13

    [27]

    Medeiros-Ribeiro G, Ohlberg D A A, Bowler D R, Tanner R E, Briggs G A D, Williams R S 1999 Surf. Sci. 431 116

    [28]

    Briggs G A D, Basile D P, Medeiros-Ribeiro G, Kamins T I, Ohlberg D A A, Williams R S 2000 Surf. Sci. 457 147

    [29]

    Oh J, Meunier V, Ham H, Nemanich R J 2002 J. Appl. Phys. 92 3332

    [30]

    Zhao F Z, Cui X F, Wang B, Hou J G 2006 Appl. Surf. Sci. 253 2785

    [31]

    Yang T H, Chi K S, Chen L J 2005 J. Appl. Phys. 98 034302

    [32]

    Toramaru M, Iida T, Sato K, Ohno S, Shudo K, Morikawa Y, Tanaka M 2008 J. Phys.: Condens. Matter 20 485006

    [33]

    Wang P Y, Yang C, Li L C, Li Y R 2008 Acta Phys. Sin. 57 2340 (in Chinese) [王佩怡、 杨 春、 李来才、 李言荣 2008 物理学报 57 2340]

    [34]

    Du W H, Wang B, Xu L, Hu Z P, Cui X F, Pan B C, Yang J L, Hou J G 2008 J. Chem. Phys. 129 164707

    [35]

    Goncharova L V, Starodub D G, Garfunkel E, Gustafsson T, Vaithyanathan V, Lettieri J, Schlom D G 2006 J. Appl. Phys. 100 014912

    [36]

    Berti M, Drigo A V, Cohen C, Siejka J, Bentini G G, Nipoti R, Guerri S 1984 J. Appl. Phys. 55 3558

  • [1]

    Nakagawara O, Kobayashi M, Yoshino Y, Katayama Y, Tabata H, Kawai T 1995 J. Appl. Phys. 78 7226

    [2]

    J H 2005 Chin. Phys. 14 2352

    [3]

    McKee R A, Walker F J, Chisholm M F 1998 Phys. Rev. Lett. 81 3014

    [4]

    Tambo T, Maeda K, Shimizu A, Tatsuyama C 1999 J. Appl. Phys. 86 3213

    [5]

    Yu Z, Ramdani J, Curless J A, Finder J M, Overgaard C D, Droopad R, Eisenbeiser K W, Hallmark J A, Ooms W J, Conner J R, Kaushik V S 2000 J. Vac. Sci. Technol. B 18 1653

    [6]

    Eisenbeiser K, Finder J M, Yu Z, Ramdani J, Curless J A, Hallmark J A, Droopad R, Ooms W J, Salem L, Bradshaw S, Overgaard C D 2000 Appl. Phys. Lett. 76 1324

    [7]

    Ahmet P, Koida T, Takakura M, Nakajima K, Yoshimoto M, Koinuma H, Tanaka M, Takeguchi M, Chikyow T 2002 Appl. Surf. Sci. 189 307

    [8]

    Wei Y, Hu X M, Liang Y, Jordan D C, Craigo B, Droopad R, Yu Z, Demkov A, Edwards J L, Ooms W J 2002 J. Vac. Sci. Technol. B 20 1402

    [9]

    McKee R A, Walker F J, Nardelli M B, Shelton W A, Stocks G M 2003 Science 300 1726

    [10]

    Zhang X, Demkov A A, Li H, Hu X, Wei Y, Kulik J 2003 Phys. Rev. B 68 125323

    [11]

    Li H, Hu X, Wei Y, Yu Z, Zhang X, Droopad R, Demkov A A, Edwards J, Moore K, Ooms W, Kulik J, Fejes P 2003 J. Appl. Phys. 93 4521

    [12]

    Forst C J, Ashman C R, Schwarz K, Blochl P E 2004 Nature 427 53

    [13]

    Yakovkin I N, Gutowski M 2004 Phys. Rev. B 70 165319

    [14]

    Yu Z, Liang Y, Overgaard C, Hu X, Curless J, Li H, Wei Y, Craigo B, Jordan D, Droopad R, Finder J, Eisenbeiser K, Marshall D, Moore K, Kulik J, Fejes P 2004 Thin Solid Films 462-463 51

    [15]

    He J Q, Jia C L, Vaithyanathan V, Schlom D G, Schubert J, Gerber A, Kolhstedt H H, Wang R H 2005 J. Appl. Phys. 97 104921

    [16]

    Kourkoutis L F, Hellberg C S, Vaithyanathan V, Li H, Parker M K, Andersen K E, Schlom D G, Muller D A 2008 Phys. Rev. Lett. 100 036101

    [17]

    Mi S B, Jia C L, Vaithyanathan V, Houben L, Schubert J, Schlom D G, Urban K 2008 Appl. Phys. Lett. 93 101913

    [18]

    Wang X F, Wang J, Li Q, Moreno M S, Zhou X Y, Dai J Y, Wang Y, Tang D 2009 J. Phys. D: Appl. Phys. 42 085409

    [19]

    Ma J H, Sun J L, Meng X J, Lin T, Shi F W, Chu J H 2005 Acta Phys. Sin. 54 1390 (in Chinese) [马建华、 孙璟兰、 孟祥建、 林 铁、 石富文、 褚君浩 2005 物理学报 54 1390]

    [20]

    Ma J H, Meng X J, Lin T, Liu S J, Zhang X D, Sun J L, Chu

    [21]

    Mann R W, Clevenger L A, Agnello P D, White F R 1995 IBM J. Res. Dev. 39 403

    [22]

    Wang T, Oh S Y, Lee W J, Kim Y J, Lee H D 2006 Appl. Surf. Sci. 252 4943

    [23]

    Alessandrino M S, Privitera S, Grimaldi M G, Bongiorno C, Pannitteri S, La Via F 2004 J. Appl. Phys. 95 1977

    [24]

    Jeon H, Yoon G, Nemanich R J 1997 Thin Solid Films 299 178

    [25]

    Yang W, Jedema F J, Ade H, Nemanich R J 1997 Thin Solid Films 308 627

    [26]

    Ezoe K, Kuriyama H, Yamamoto T, Ohara S, Matsumoto S 1998 Appl. Surf. Sci. 130 13

    [27]

    Medeiros-Ribeiro G, Ohlberg D A A, Bowler D R, Tanner R E, Briggs G A D, Williams R S 1999 Surf. Sci. 431 116

    [28]

    Briggs G A D, Basile D P, Medeiros-Ribeiro G, Kamins T I, Ohlberg D A A, Williams R S 2000 Surf. Sci. 457 147

    [29]

    Oh J, Meunier V, Ham H, Nemanich R J 2002 J. Appl. Phys. 92 3332

    [30]

    Zhao F Z, Cui X F, Wang B, Hou J G 2006 Appl. Surf. Sci. 253 2785

    [31]

    Yang T H, Chi K S, Chen L J 2005 J. Appl. Phys. 98 034302

    [32]

    Toramaru M, Iida T, Sato K, Ohno S, Shudo K, Morikawa Y, Tanaka M 2008 J. Phys.: Condens. Matter 20 485006

    [33]

    Wang P Y, Yang C, Li L C, Li Y R 2008 Acta Phys. Sin. 57 2340 (in Chinese) [王佩怡、 杨 春、 李来才、 李言荣 2008 物理学报 57 2340]

    [34]

    Du W H, Wang B, Xu L, Hu Z P, Cui X F, Pan B C, Yang J L, Hou J G 2008 J. Chem. Phys. 129 164707

    [35]

    Goncharova L V, Starodub D G, Garfunkel E, Gustafsson T, Vaithyanathan V, Lettieri J, Schlom D G 2006 J. Appl. Phys. 100 014912

    [36]

    Berti M, Drigo A V, Cohen C, Siejka J, Bentini G G, Nipoti R, Guerri S 1984 J. Appl. Phys. 55 3558

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  • Received Date:  14 May 2010
  • Accepted Date:  30 June 2010
  • Published Online:  15 March 2011

Initial growth of SrTiO3 on Sr/Si(001) studied by scanning tunneling microscope

  • 1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China

Abstract: SrTiO3 ultra-thin film was deposited on the Sr/Si(001) surface using pulsed laser deposition (PLD) at room temperature and studied using scanning tunneling microscopy (STM). After annealing at 660 ℃ for about 60 minutes in ultrahigh vacuum (UHV), nanosize islands were formed on the Sr/Si(001) surface. High resolution STM images and dI/dV mapping of islands on Sr/Si(001) were obtained. The islands can be attributed to TiSi2 islands with C49 and C54 structures. The existence of Sr on Si is not sufficient to prevent the reaction between Si and Ti in preparation of ultra-thin SrTiO3 films.

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