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808nm vertical-cavity surface-emitting laser with large aperture

Hao Yong-Qin Feng Yuan Wang Fei Yan Chang-Ling Zhao Ying-Jie Wang Xiao-Hua Wang Yu-Xia Jiang Hui-Lin Gao Xin Bo Bao-Xue

808nm vertical-cavity surface-emitting laser with large aperture

Hao Yong-Qin, Feng Yuan, Wang Fei, Yan Chang-Ling, Zhao Ying-Jie, Wang Xiao-Hua, Wang Yu-Xia, Jiang Hui-Lin, Gao Xin, Bo Bao-Xue
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  • Received Date:  28 June 2010
  • Accepted Date:  05 August 2010
  • Published Online:  15 June 2011

808nm vertical-cavity surface-emitting laser with large aperture

  • 1. State Key Laboratory of High-Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022, China

Abstract: For the carriers-crowded effect in vertical-cavity surface-emitting laser (VCSEL), the injected current passes mainly through the edge of the circular active region, which results in nonuniformity of the output power density and annular facula with a poor central intensity, especially in large aperture VCSEL. How to restrain carriers-crowded effect becomes a technique problem to develop electrically pumped high power large aperture VCSEL. High power 808 nm VCSEL is demonstrated by introducing a novel structure. And an output power of 0.3 W is achieved at 1 A at room temperature under continuous wave operation.

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