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Transport characteristic of photoelectrons in uniform-doping GaAs photocathode

Ren Ling Chang Ben-Kang Hou Rui-Li Wang Yong

Transport characteristic of photoelectrons in uniform-doping GaAs photocathode

Ren Ling, Chang Ben-Kang, Hou Rui-Li, Wang Yong
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  • The transport of photoelectrons in a uniform-doping transmission-mode GaAs photocathode is calculated by establishing the models of atomic configuration and ionized impurity scattering. And the influence of the doping concentration of photocathode, the photocathode thickness, the electron diffusion length on the diffused circle and the ratio of the number of photoelectrons reaching the emit-surface to the number of exited photoelectrons at the back-interface of GaAs photocathode are analyzed. The calculated results show that the limiting linear resolution is 769 mm-1 with the cathode thickness being 2 m, the electron diffusion length 3.6 m and the uniform-doping concentration 11019 cm-3. The research on the transport of photoelectrons is worthwhile for preparing the high-performance GaAs cathode and improving the resolution of intensifier image.
    • Funds:
    [1]

    Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 (in Chinese) [杨 智、邹继军、常本康 2010 物理学报 59 4290]

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    Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541

    [4]
    [5]

    Zhou L W, Li Y, Zhang Z Q, Monastyrski M A, Schelev M Y 2005 Acta Phys. Sin. 54 3591 (in Chinese) [周立伟、李 元、张智诠,Monastyrski M A,Schelev M Y 2005 物理学报 54 3591]

    [6]

    Liu Z, Machuca F, Pianetta P, Spicer W E, Pease R F W 2004 Appl. Phys. Lett. 85 1541

    [7]
    [8]

    Zou J J, Chang B K, Yang Z 2007 Acta Phys.Sin. 56 6109 (in Chinese) [邹继军、常本康、杨 智 2007 物理学报 56 6109]

    [9]
    [10]
    [11]

    Ding H B, Pang W N, Liu Y B, Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) [丁海兵、庞文宁、刘义保、尚仁成 2005 物理学报 54 4097]

    [12]
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    Liu Y Z, Wang Z C, Dong Y Q 1995 Electron Emission and Photocathode (Beijing: Beijing Institute of Technology Press) p308 (in Chinese) [刘元震、王仲春、董亚强 1995 电子发射与光电阴极 (北京:北京理工大学出版社) 第308页]

    [14]

    Qian Y S, Zong Z Y, Chang B K 2001 J. Vac. Sci. Technol. 21 445 (in Chinese) [钱芸生、宗志园、常本康 2001 真空科学与技术 21 445]

    [15]
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    Chang B K, Du X Q, Liu L, Zong Z Y, Fu R G, Qian Y S 2003 Proc. SPIE 5209 209

    [17]
    [18]
    [19]

    Guo L J, Wstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) [郭立俊、 Wstenberg J P, Andreyev O, Michael B, Martin A 2005 物理学报 54 3200]

    [20]

    Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) [牛 军、杨 智、常本康、乔建良、张益军 2009 物理学报 58 5002]

    [21]
    [22]

    Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军、常本康、杨 智 2007 物理学报 56 2992]

    [23]
    [24]

    Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2009 Acta Phys. Sin. 58 5842 (in Chinese) [邹继军、常本康、杨 智、张益军、乔建良 2009 物理学报 58 5842]

    [25]
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    Zhou L W 1993 Electron Optics with Wide Beam Focusing (Beijing: Beijing Institute of Technology Press) p96 (in Chinese) [周立伟1993宽束电子光学(北京:北京理工大学出版社) 第96页]

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    Xiang S M, Ni G Q 1999 The Principle of Photoelectron Imaging Devices (Beijing: National Defence Industry Press) p65 (in Chinese) [向世明、倪国强 1999 光电子成像器件原理 (北京:国防工业出版社) 第65页]

    [29]
    [30]

    Liu E K, Zhu B S, Luo J S 2009 Physics of Semiconductors (7th ed) (Beijing: Publishing House of Electronics Industry) p110 (in Chinese) [刘恩科、朱秉升、罗晋生 2009 半导体物理学(第7版) (北京:电子工业出版社) 第110页]

    [31]
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    Zhu S L 1979 Atomic Physics (Beijing: Higher Education Press) p12 (in Chinese) [褚圣麟 1979原子物理学 (北京:高等教育出版社) 第12页]

    [33]
  • [1]

    Yang Z, Zou J J, Chang B K 2010 Acta Phys. Sin. 59 4290 (in Chinese) [杨 智、邹继军、常本康 2010 物理学报 59 4290]

    [2]
    [3]

    Zhang Y J, Chang B K, Yang Z, Niu J, Zou J J 2009 Chin. Phys. B 18 4541

    [4]
    [5]

    Zhou L W, Li Y, Zhang Z Q, Monastyrski M A, Schelev M Y 2005 Acta Phys. Sin. 54 3591 (in Chinese) [周立伟、李 元、张智诠,Monastyrski M A,Schelev M Y 2005 物理学报 54 3591]

    [6]

    Liu Z, Machuca F, Pianetta P, Spicer W E, Pease R F W 2004 Appl. Phys. Lett. 85 1541

    [7]
    [8]

    Zou J J, Chang B K, Yang Z 2007 Acta Phys.Sin. 56 6109 (in Chinese) [邹继军、常本康、杨 智 2007 物理学报 56 6109]

    [9]
    [10]
    [11]

    Ding H B, Pang W N, Liu Y B, Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) [丁海兵、庞文宁、刘义保、尚仁成 2005 物理学报 54 4097]

    [12]
    [13]

    Liu Y Z, Wang Z C, Dong Y Q 1995 Electron Emission and Photocathode (Beijing: Beijing Institute of Technology Press) p308 (in Chinese) [刘元震、王仲春、董亚强 1995 电子发射与光电阴极 (北京:北京理工大学出版社) 第308页]

    [14]

    Qian Y S, Zong Z Y, Chang B K 2001 J. Vac. Sci. Technol. 21 445 (in Chinese) [钱芸生、宗志园、常本康 2001 真空科学与技术 21 445]

    [15]
    [16]

    Chang B K, Du X Q, Liu L, Zong Z Y, Fu R G, Qian Y S 2003 Proc. SPIE 5209 209

    [17]
    [18]
    [19]

    Guo L J, Wstenberg J P, Andreyev O, Michael B, Martin A 2005 Acta Phys. Sin. 54 3200 (in Chinese) [郭立俊、 Wstenberg J P, Andreyev O, Michael B, Martin A 2005 物理学报 54 3200]

    [20]

    Niu J, Yang Z, Chang B K, Qiao J L, Zhang Y J 2009 Acta Phys. Sin. 58 5002 (in Chinese) [牛 军、杨 智、常本康、乔建良、张益军 2009 物理学报 58 5002]

    [21]
    [22]

    Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军、常本康、杨 智 2007 物理学报 56 2992]

    [23]
    [24]

    Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2009 Acta Phys. Sin. 58 5842 (in Chinese) [邹继军、常本康、杨 智、张益军、乔建良 2009 物理学报 58 5842]

    [25]
    [26]
    [27]

    Zhou L W 1993 Electron Optics with Wide Beam Focusing (Beijing: Beijing Institute of Technology Press) p96 (in Chinese) [周立伟1993宽束电子光学(北京:北京理工大学出版社) 第96页]

    [28]

    Xiang S M, Ni G Q 1999 The Principle of Photoelectron Imaging Devices (Beijing: National Defence Industry Press) p65 (in Chinese) [向世明、倪国强 1999 光电子成像器件原理 (北京:国防工业出版社) 第65页]

    [29]
    [30]

    Liu E K, Zhu B S, Luo J S 2009 Physics of Semiconductors (7th ed) (Beijing: Publishing House of Electronics Industry) p110 (in Chinese) [刘恩科、朱秉升、罗晋生 2009 半导体物理学(第7版) (北京:电子工业出版社) 第110页]

    [31]
    [32]

    Zhu S L 1979 Atomic Physics (Beijing: Higher Education Press) p12 (in Chinese) [褚圣麟 1979原子物理学 (北京:高等教育出版社) 第12页]

    [33]
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  • Received Date:  28 October 2010
  • Accepted Date:  15 December 2010
  • Published Online:  05 April 2011

Transport characteristic of photoelectrons in uniform-doping GaAs photocathode

  • 1. Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 210094, China

Abstract: The transport of photoelectrons in a uniform-doping transmission-mode GaAs photocathode is calculated by establishing the models of atomic configuration and ionized impurity scattering. And the influence of the doping concentration of photocathode, the photocathode thickness, the electron diffusion length on the diffused circle and the ratio of the number of photoelectrons reaching the emit-surface to the number of exited photoelectrons at the back-interface of GaAs photocathode are analyzed. The calculated results show that the limiting linear resolution is 769 mm-1 with the cathode thickness being 2 m, the electron diffusion length 3.6 m and the uniform-doping concentration 11019 cm-3. The research on the transport of photoelectrons is worthwhile for preparing the high-performance GaAs cathode and improving the resolution of intensifier image.

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