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Surface-plasmon-mediated emission enhancement from Ag-capped ZnO thin films

Qiu Dong-Jiang Fan Wen-Zhi Weng Sheng Wu Hui-Zhen Wang Jun

Surface-plasmon-mediated emission enhancement from Ag-capped ZnO thin films

Qiu Dong-Jiang, Fan Wen-Zhi, Weng Sheng, Wu Hui-Zhen, Wang Jun
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  • Abstract views:  1567
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  • Received Date:  24 October 2010
  • Accepted Date:  03 December 2010
  • Published Online:  15 August 2011

Surface-plasmon-mediated emission enhancement from Ag-capped ZnO thin films

  • 1. Department of Physics, Zhejiang University, Hangzhou 310027, China

Abstract: Ag/ZnO bilayer thin films are fabricated on Si substrates via two-step approach of ZnO sputtering + Ag evaporation. The enhancement of the near band edge (NBE) emission of the ZnO film is realized through coupling between the surface plasmon resonating energy at Ag/ZnO interface and the photonic energy of ZnO NBE emission. The dependence of the emission enhancement ratio of ZnO on the thickness and the growth temperature T of Ag cap-layers are investigated. By evaporating Ag(8 nm) cap-layer onto ZnO(100 nm) film at high substrate temperatures (T300 ℃), the value reaches about 18,i.e., 18, which is more than twice that of Ag(8 nm)/ZnO(100 nm) bilayer films grown at low temperatures (T200 ℃). It is found that the realization of the larger can be ascribed to the bigger surface roughness of Ag/ZnO bilayer samples prepared under higher growth temperatures.

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