Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Ge-vacancy complexes in Ge-doped czochralski silicon crystal

Wu Tai-Quan

Ge-vacancy complexes in Ge-doped czochralski silicon crystal

Wu Tai-Quan
PDF
Get Citation
Metrics
  • Abstract views:  1891
  • PDF Downloads:  553
  • Cited By: 0
Publishing process
  • Received Date:  30 April 2011
  • Accepted Date:  30 July 2011
  • Published Online:  20 March 2012

Ge-vacancy complexes in Ge-doped czochralski silicon crystal

    Corresponding author: Wu Tai-Quan, buckyballling@hotmail.com
  • 1. Department of Physics, China Jiliang Universtiy, Hangzhou 310018, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 10904134 and 10802083) and the Innovation Team Funding od Zhejiang Province, China (Grant No. 2009R50005).

Abstract: The first-principls theory is used to study the interaction between the Ge atom and the vacancies in Ge-doped czochralski silicon. The CASTEP calculation shows the stable structural model of Ge atom and one vacancy, two vacancies and three vacancies through the distance between the Ge atom and vacancy (or the vacancy centers) and the size of the area (or volume). The calculation shows that the Ge atom introduced into the GCZ Si crystal tends to accumulate with the vacancy and then seeds for the Ge-vacancy complexes.

Reference (21)

Catalog

    /

    返回文章
    返回