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The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film

Han Liang Shao Hong-Xiang He Liang Chen Xian Zhao Yu-Qing

The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film

Han Liang, Shao Hong-Xiang, He Liang, Chen Xian, Zhao Yu-Qing
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  • Received Date:  16 September 2011
  • Accepted Date:  28 May 2012
  • Published Online:  20 May 2012

The effect of nitrogen ion bombarding energy on the bonding structure of nitrogenated tetrahedral amorphous carbon film

  • 1. School of Technical Physics, Xidian University, Xi'an 710071, China;
  • 2. Luoyang Institute of Science and Technology, LuoYang 471023, China;
  • 3. School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
Fund Project:  Project supported by the Key Program of 3115 Science and Technology Originality Innovation Project of Shaanxi Province, China (Grant No. 2009ZDKG-29) and the Fundamental Research Funds for the Central Universities, China.

Abstract: The tetrahedral amorphous carbon (ta-C) films with more than 80% sp3 in fraction are deposited by the filtered cathode vacuum arc technique. Then the energetic nitrogen (N) ions are used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon (ta-C:N) films. The composition and the structure of the films are analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy. The result shows that the bombardment of energetic nitrogen ions can form CN bonds, convert CC bonds into C=C bonds, and increase the size of sp2 cluster. The CN bonds are composed of C=N bonds and CN bonds. The content of C=N bonds increases with the N ion bombardment energy increasing, but the content of CN bonds is inversely proportional to the increase of nitrogen ion energy. In addition, CN bonds do not exist in the films.

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