Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Research on shot noise suppression in quasi-ballistic transport nano-mOSFET

Jia Xiao-Fei Du Lei Tang Dong-He Wang Ting-Lan Chen Wen-Hao

Research on shot noise suppression in quasi-ballistic transport nano-mOSFET

Jia Xiao-Fei, Du Lei, Tang Dong-He, Wang Ting-Lan, Chen Wen-Hao
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

  • Previous studies of shot noise suppression in nano-MOSFET either ignored its suppression or emphasized only its existence but gave no deeper research. In this paper, based on the Navid model, the expressions of shot noise suppression factor (Fano) in quasi-ballistic transport nano-MOSFETs are derived with separately considering Fermi effect, Coulomb interaction and the combination of the two effects. The variations of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated. The results we obtained with considering the combination of the two effects are consistent with those from experiments, and the theoretical explanation is given.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61076101).
    [1]

    Jeon J, Lee J, Kim J, Park C H, Lee H, Oh H, Kang H K, Park B G, Shin H 2009 Symposium on VLSI Technology Honolulu, June 16---18, 2009, 48

    [2]

    Tang D H, Du L, Wang T L, Chen H, Chen W H 2011 Acta Phy. Sin. 60 107201 (in Chinese) [唐冬和, 杜磊, 王婷岚, 陈华, 陈文豪 2011 物理学报 60 107201]

    [3]

    Iannaccone G 2004 J. Comput. Electron. 3 199

    [4]

    Mugnaini G, Iannaccone G 2006 J. Comput. Electron. 5 91

    [5]

    Timp G, Bude J, Bourdelle K K, Garno J, Ghetti A, Gossmann H, Green M, Forsyth G, Kim Y, Kleiman R, Klemens F, Kornblit A, Lochstampfor C, Mansfield W, Moccio S, Sorsch T, Tennant D M, Timp W, Tung R 1999 Electron Devices Meeting 1999 IEDM Technical Digest. International Washington DC, USA, December 5---8, 1999 p55

    [6]

    Palestri P, Esseni D, Eminente S, Fiegan C, Sangiorgi E, Selmi L 2005 IEEE T. Electron. Dev. 52 2727

    [7]

    Eminente S, Esseni D, Palestri P, Fiegan C, Selmi L, Sangiorgi E 2005 IEEE T. Electron. Dev. 52 2736

    [8]

    Isobe Y, Hara K, Navarro D, Takeda Y, Ezaki T, Miura-mattausch M 2007 IEICE Transactions On Electronics. 90 885

    [9]

    Navid R, Jungemann C, Lee T, Dutton R 2007 J. Appl. Phys. 101 124501

    [10]

    Navid R, Dutton R W 2002 International Conference on Simulation of Semiconductor Processes and Devices Kobe, Japan, September 4---6 2002 p75

    [11]

    Tang D H, Du L, Wang T L, Chen H, Jia X F 2011 Acta Phy. Sin. 60 097202 (in Chinese) [唐冬和, 杜磊, 王婷岚, 陈华, 贾晓菲 2011 物理学报 60 097202]

    [12]

    An X T, Li Y X, Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]

    [13]

    Chen H, Du L, Zhuang Y Q 2008 Acta Phy. Sin. 57 2438 (in Chinese) [陈华, 杜磊, 庄奕琪 2008 物理学报 56 2438]

    [14]

    Ji Y, Nan L, Mouthaan K 2009 Asia Pacific Microwave Conference Singapore, Singapore December 07---10 2009 p1659

    [15]

    Lundstrom M 1997 IEEE Electron Dev. Lett. 18 361

    [16]

    Martin J S, Bournel A, Dollfus P 2004 IEEE T. Electron. Dev. 51 1148

    [17]

    Rahman A, Lundstrom M S 2002 IEEE T. Electron. Dev. 49 481

    [18]

    Khanna V K 2004 Phys. Rep. 398 67

    [19]

    Ong S N, Yeo K S, Chew K W J, Chan L H K, Loo X S, Do M A, Boon C C 2010 12th International Symposium on Integrated Circuits Singapore, Singapore December 14---16 2009 p556

    [20]

    Lundstrom M, Guo J 2006 Nanoscale Transisitors: Device Physics, Modeling and Simulation (Beijing: Science Press) p105

    [21]

    Naveh Y, Averin D, Likharev K 1998 Phys. Rev. B 58 15371

    [22]

    Lundstrom M, Ren Z, Datta S 2002 IEEE T. Electron Dev. 49 133

    [23]

    Rahman A, Guo J, Datta S, Lundstrom M S 2003 IEEE T. Electron Dev. 50 1853

    [24]

    Rhew J H, Ren Z, Lundstrom M S 2002 Solid State Electron. 46 1899

    [25]

    Bulashenko O, Rub'i J 2001 Phys. Rev. B 64 45307

    [26]

    Gomila G, Cantalapiedra I, González T, Reggiani L 2002 Phys. Rev. B 66 75302

    [27]

    González T, Mateos J, Pardo D, Bulashenko O, Reggiani L 1999 Phys. Rev. B 60 2670

  • [1]

    Jeon J, Lee J, Kim J, Park C H, Lee H, Oh H, Kang H K, Park B G, Shin H 2009 Symposium on VLSI Technology Honolulu, June 16---18, 2009, 48

    [2]

    Tang D H, Du L, Wang T L, Chen H, Chen W H 2011 Acta Phy. Sin. 60 107201 (in Chinese) [唐冬和, 杜磊, 王婷岚, 陈华, 陈文豪 2011 物理学报 60 107201]

    [3]

    Iannaccone G 2004 J. Comput. Electron. 3 199

    [4]

    Mugnaini G, Iannaccone G 2006 J. Comput. Electron. 5 91

    [5]

    Timp G, Bude J, Bourdelle K K, Garno J, Ghetti A, Gossmann H, Green M, Forsyth G, Kim Y, Kleiman R, Klemens F, Kornblit A, Lochstampfor C, Mansfield W, Moccio S, Sorsch T, Tennant D M, Timp W, Tung R 1999 Electron Devices Meeting 1999 IEDM Technical Digest. International Washington DC, USA, December 5---8, 1999 p55

    [6]

    Palestri P, Esseni D, Eminente S, Fiegan C, Sangiorgi E, Selmi L 2005 IEEE T. Electron. Dev. 52 2727

    [7]

    Eminente S, Esseni D, Palestri P, Fiegan C, Selmi L, Sangiorgi E 2005 IEEE T. Electron. Dev. 52 2736

    [8]

    Isobe Y, Hara K, Navarro D, Takeda Y, Ezaki T, Miura-mattausch M 2007 IEICE Transactions On Electronics. 90 885

    [9]

    Navid R, Jungemann C, Lee T, Dutton R 2007 J. Appl. Phys. 101 124501

    [10]

    Navid R, Dutton R W 2002 International Conference on Simulation of Semiconductor Processes and Devices Kobe, Japan, September 4---6 2002 p75

    [11]

    Tang D H, Du L, Wang T L, Chen H, Jia X F 2011 Acta Phy. Sin. 60 097202 (in Chinese) [唐冬和, 杜磊, 王婷岚, 陈华, 贾晓菲 2011 物理学报 60 097202]

    [12]

    An X T, Li Y X, Liu J J 2007 Acta Phy. Sin. 56 4105 (in Chinese) [安兴涛, 李玉现, 刘建军 2007 物理学报 56 4105]

    [13]

    Chen H, Du L, Zhuang Y Q 2008 Acta Phy. Sin. 57 2438 (in Chinese) [陈华, 杜磊, 庄奕琪 2008 物理学报 56 2438]

    [14]

    Ji Y, Nan L, Mouthaan K 2009 Asia Pacific Microwave Conference Singapore, Singapore December 07---10 2009 p1659

    [15]

    Lundstrom M 1997 IEEE Electron Dev. Lett. 18 361

    [16]

    Martin J S, Bournel A, Dollfus P 2004 IEEE T. Electron. Dev. 51 1148

    [17]

    Rahman A, Lundstrom M S 2002 IEEE T. Electron. Dev. 49 481

    [18]

    Khanna V K 2004 Phys. Rep. 398 67

    [19]

    Ong S N, Yeo K S, Chew K W J, Chan L H K, Loo X S, Do M A, Boon C C 2010 12th International Symposium on Integrated Circuits Singapore, Singapore December 14---16 2009 p556

    [20]

    Lundstrom M, Guo J 2006 Nanoscale Transisitors: Device Physics, Modeling and Simulation (Beijing: Science Press) p105

    [21]

    Naveh Y, Averin D, Likharev K 1998 Phys. Rev. B 58 15371

    [22]

    Lundstrom M, Ren Z, Datta S 2002 IEEE T. Electron Dev. 49 133

    [23]

    Rahman A, Guo J, Datta S, Lundstrom M S 2003 IEEE T. Electron Dev. 50 1853

    [24]

    Rhew J H, Ren Z, Lundstrom M S 2002 Solid State Electron. 46 1899

    [25]

    Bulashenko O, Rub'i J 2001 Phys. Rev. B 64 45307

    [26]

    Gomila G, Cantalapiedra I, González T, Reggiani L 2002 Phys. Rev. B 66 75302

    [27]

    González T, Mateos J, Pardo D, Bulashenko O, Reggiani L 1999 Phys. Rev. B 60 2670

  • [1] A shot noise model of the short channel Metal-Oxide-Semiconductor Field-Effect Transistor. Acta Physica Sinica, 2020, (): 007100. doi: 10.7498/aps.69.20200497
    [2] Zhang Zhi-Yong, Wang Tai-Hong. Luttinger parameter of carbon nanotubes investigated by shot noise experiment. Acta Physica Sinica, 2004, 53(3): 942-946. doi: 10.7498/aps.53.942
    [3] Tang Dong-He, Du Lei, Wang Ting-Lan, Chen Hua, Chen Wen-Hao. Qualitative analysis of excess noise in nanoscale MOSFET. Acta Physica Sinica, 2011, 60(10): 107201. doi: 10.7498/aps.60.107201
    [4] Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan. An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094. doi: 10.7498/aps.55.6090
    [5] Shi Zhen-Gang, Wen Wei, Chen Xiong-Wen, Xiang Shao-Hua, Song Ke-Hui. Shot noise spectrum of a double quantum dot charge qubit. Acta Physica Sinica, 2010, 59(5): 2971-2975. doi: 10.7498/aps.59.2971
    [6] DONG ZHENG-CHAO, XING DING-YU, DONG JIN-MING. SHOT NOISE IN FERROMAGNET-SUPERCONDUCTOR TUNNELING JUNCTION. Acta Physica Sinica, 2001, 50(3): 556-560. doi: 10.7498/aps.50.556
    [7] Song Zhi-Jun, Lü Zhao-Zheng, Dong Quan, Feng Jun-Ya, Ji Zhong-Qing, Jin Yong, Lü Li. Shot noise measurement for tunnel junctions using a homemade cryogenic amplifier at dilution refrigerator temperatures. Acta Physica Sinica, 2019, 68(7): 070702. doi: 10.7498/aps.68.20190114
    [8] Zhuang Yi-Qi, Bao Jun-Lin, Chen Wen-Hao, Du Lei, He Liang, Chen Hua, Sun Peng, Wang Ting-Lan. Shot noise measurement methods in electronic devices. Acta Physica Sinica, 2011, 60(5): 050704. doi: 10.7498/aps.60.050704
    [9] Yan Zhi-Meng, Wang Jing, Guo Jian-Hong. Low-bias oscillations of shot noise as signatures of Majorana zero modes. Acta Physica Sinica, 2018, 67(18): 187302. doi: 10.7498/aps.67.20172372
    [10] Chen Hua, Du Lei, Zhuang Yi-Qi. Monte Carlo simulation of shot noise in the coherent and mesoscopic system. Acta Physica Sinica, 2008, 57(4): 2438-2444. doi: 10.7498/aps.57.2438
    [11] Dong Zheng-Chao, Liang Zhi-Peng. Shot noise in the semiconductor/ferromagnetic d-wave superconductor tunnel junction. Acta Physica Sinica, 2010, 59(2): 1288-1293. doi: 10.7498/aps.59.1288
    [12] Chen Hua, Du Lei, Niu Wen-Juan, Zhuang Yi-Qi. Relation between charge shot noise and spin polarization governed by Rashba spin orbit interaction. Acta Physica Sinica, 2009, 58(8): 5685-5692. doi: 10.7498/aps.58.5685
    [13] An Xing-Tao, Li Yu-Xian, Liu Jian-Jun. Noise in mesoscopic physics. Acta Physica Sinica, 2007, 56(7): 4105-4112. doi: 10.7498/aps.56.4105
    [14] Zhou Yang, Guo Jian-Hong. Shot noise characteristics of Majorana fermions in transport through double quantum dots. Acta Physica Sinica, 2015, 64(16): 167302. doi: 10.7498/aps.64.167302
    [15] Lan Kang, Du Qian, Kang Li-Sha, Jiang Lu-Jing, Lin Zhen-Yu, Zhang Yan-Hui. The electron transfer properties of an open double quantum dot based on a quantum point contact. Acta Physica Sinica, 2020, 69(4): 040504. doi: 10.7498/aps.69.20191718
    [16] TSCHEN DSIN-GUANG. SCHROTRAUSCHEN UND THERMISCHES RAUSCHEN IN EINER P-N-FLACHENDIODE. Acta Physica Sinica, 1965, 21(2): 383-389. doi: 10.7498/aps.21.383
    [17] ZHENG DA-FANG, LIU YOU-YAN, ZHU ZHU-XIANG. SPECTRAL DENSITY FOR THE TUNNELING CURRENT ZERO-FREQUENCY SHOT-NOISE IN A ONE-DIMENTIONAL MESOSCOPIC SYSTEM. Acta Physica Sinica, 1999, 48(2): 302-313. doi: 10.7498/aps.48.302
    [18] Wang Da-Yong, Wang Yun-Xin, Guo Sha, Rong Lu, Zhang Yi-Zhuo. Research on speckle denoising by lensless Fourier transform holographic imaging with angular diversity. Acta Physica Sinica, 2014, 63(15): 154205. doi: 10.7498/aps.63.154205
    [19] Cao Zheng-Wen, Zhang Shuang-Hao, Feng Xiao-Yi, Zhao Guang, Chai Geng, Li Dong-Wei. The design and realization of continuous-variable quantum key distribution system based on real-time shot noise variance monitoring. Acta Physica Sinica, 2017, 66(2): 020301. doi: 10.7498/aps.66.020301
    [20] Dong Zheng-Chao. . Acta Physica Sinica, 2002, 51(4): 894-897. doi: 10.7498/aps.51.894
  • Citation:
Metrics
  • Abstract views:  2127
  • PDF Downloads:  698
  • Cited By: 0
Publishing process
  • Received Date:  13 September 2011
  • Accepted Date:  18 November 2011
  • Published Online:  05 June 2012

Research on shot noise suppression in quasi-ballistic transport nano-mOSFET

  • 1. School of Technical Physics, Xidian University, Xi’an 710071, China;
  • 2. Department of Electronic and Information Engineering, Ankang University, Ankang 725000, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 61076101).

Abstract: Previous studies of shot noise suppression in nano-MOSFET either ignored its suppression or emphasized only its existence but gave no deeper research. In this paper, based on the Navid model, the expressions of shot noise suppression factor (Fano) in quasi-ballistic transport nano-MOSFETs are derived with separately considering Fermi effect, Coulomb interaction and the combination of the two effects. The variations of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated. The results we obtained with considering the combination of the two effects are consistent with those from experiments, and the theoretical explanation is given.

Reference (27)

Catalog

    /

    返回文章
    返回