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Compositional dependence of crystallization behavior in GeS2-Ga2S3-CsI chalcogenide glass

Lin Chang-Gui Li Zhuo-Bin Qian Hai-Jiao Ni Wen-Hao Li Yan-Ying Dai Shi-Xun

Compositional dependence of crystallization behavior in GeS2-Ga2S3-CsI chalcogenide glass

Lin Chang-Gui, Li Zhuo-Bin, Qian Hai-Jiao, Ni Wen-Hao, Li Yan-Ying, Dai Shi-Xun
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  • Controllable precipitation of crystals is one of the key points in the fabrication of chalcogenide glass-ceramics. Glass compositions of 65GeS225Ga2S310CsI (GGC25) and 70GeS220Ga2S310CsI (GGC20) are specifically selected, and their glass-ceramic samples are obtained by careful heat treatment. The transmission spectra, grain sizes, and crystal phases of obtained samples are characterized using visible-near IR spectroscopy, SEM, XRD, and Raman scattering. Different crystallization behaviors are evidenced that GeS2 crystals are precipitated in GGC20 glass, and GGC25 samples show two crystallization mechanisms during the heat treatment, that is, Ga2S3 crystals were first precipitated and then the GeS2 ones. The compositional and the microstructural dependences of crystallization behavior are discussed, which would be a significant reference for the controllable crystallization in chalcogenide glasses.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61108057), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y4110322), the Natural Science Foundation of Ningbo, China (Grant No. 2011A610091), and the K. C. Wong Magna Foundation of Ningbo University, China.
    [1]

    Sanghera J S, Aggarwal I D 1999 J. Non-Cryst. Solids 256-257 6

    [2]

    Zakery A, Elliott S R 2003 J. Non-Cryst. Solids 330 1

    [3]

    Song B A, Dai S X, Xu T F, Nie Q H, Shen X, Wang X S, Lin C G 2011 Acta Phys. Sin. 60 084217 (in Chinese) [宋宝安, 戴世勋, 徐铁峰, 聂秋华, 沈祥, 王训四, 林常规 2011 物理学报 60 084217]

    [4]

    Sun J, Nie Q, Wang G, Dai S, Zhang W, Song B, Shen X, Xu T 2011 Acta Phys. Sin. 60 114212 (in Chinese) [孙杰, 聂秋华, 王国祥, 戴世勋, 张巍, 宋宝安, 沈祥, 徐铁峰 2011 物理学报 60 114212]

    [5]

    Mecholsky Jun J J, Moynihan C T, Macedo P B Srinivasan G R 1976 J. Mater. Sci. 11 1952

    [6]

    Zhang X, Hongli M A Lucas J 2004 J. Non-Cryst. Solids 337 130

    [7]

    Zhang X H, Calvez L, Seznec V, Ma H L, Danto S, Houizot P, Boussard-Plédel C, Lucas J 2006 J. Non-Cryst. Solids 352 2411

    [8]

    Lin C, Calvez L, Bureau B, Ledemi Y, Xu Y, Tao H, Zhang X Zhao X 2010 J. Optoelectron Adv. M. 12 1684

    [9]

    Lin C, Calvez L, Bureau B, Tao H, Allix M, Hao Z, Seznec V, Zhang X Zhao X 2010 Phys. Chem. Chem. Phys. 12 3780

    [10]

    Lin C, Calvez L, Rozé M, Tao H, Zhang X Zhao X 2009 Appl. Phys. A Mater. 97 713

    [11]

    Heo J, Min Yoon J, Ryou S Y 1998 J. Non-Cryst. Solids 238 115

    [12]

    Tverjanovich A, Tveryanovich YS Loheider S 1996 J. Non-Cryst. Solids 208 49

    [13]

    Guo H, Zhai Y, Tao H, Dong G Zhao X 2007 Maters Sci. EngB-Adv. 138 235

    [14]

    Lin C, Calvez L, Tao H, Allix M, Moréac A, Zhang X Zhao X 2011 J. Solid. State. Chem. 184 584

    [15]

    Tikhomirov V K, Kotsalas I P, Raptis C Parshin D A 1998 Solid. State. Commun. 106 145

    [16]

    Tao H, Lin C, Gong Y, Mao S Zhao X 2008 Optoelectron. Adv. Mater. 2 29

    [17]

    Lucovsky G, deNeufville J P, Galeener F L 1974 Phys. Rev. B 9 1591

    [18]

    Crnosek Z, Crnosková E Benes L 1997 J. Mol. Struct. 435 193

    [19]

    Tao H, Zhao X, Jing C, Yang H, Mao S 2005 Solid State Commun. 133 327

  • [1]

    Sanghera J S, Aggarwal I D 1999 J. Non-Cryst. Solids 256-257 6

    [2]

    Zakery A, Elliott S R 2003 J. Non-Cryst. Solids 330 1

    [3]

    Song B A, Dai S X, Xu T F, Nie Q H, Shen X, Wang X S, Lin C G 2011 Acta Phys. Sin. 60 084217 (in Chinese) [宋宝安, 戴世勋, 徐铁峰, 聂秋华, 沈祥, 王训四, 林常规 2011 物理学报 60 084217]

    [4]

    Sun J, Nie Q, Wang G, Dai S, Zhang W, Song B, Shen X, Xu T 2011 Acta Phys. Sin. 60 114212 (in Chinese) [孙杰, 聂秋华, 王国祥, 戴世勋, 张巍, 宋宝安, 沈祥, 徐铁峰 2011 物理学报 60 114212]

    [5]

    Mecholsky Jun J J, Moynihan C T, Macedo P B Srinivasan G R 1976 J. Mater. Sci. 11 1952

    [6]

    Zhang X, Hongli M A Lucas J 2004 J. Non-Cryst. Solids 337 130

    [7]

    Zhang X H, Calvez L, Seznec V, Ma H L, Danto S, Houizot P, Boussard-Plédel C, Lucas J 2006 J. Non-Cryst. Solids 352 2411

    [8]

    Lin C, Calvez L, Bureau B, Ledemi Y, Xu Y, Tao H, Zhang X Zhao X 2010 J. Optoelectron Adv. M. 12 1684

    [9]

    Lin C, Calvez L, Bureau B, Tao H, Allix M, Hao Z, Seznec V, Zhang X Zhao X 2010 Phys. Chem. Chem. Phys. 12 3780

    [10]

    Lin C, Calvez L, Rozé M, Tao H, Zhang X Zhao X 2009 Appl. Phys. A Mater. 97 713

    [11]

    Heo J, Min Yoon J, Ryou S Y 1998 J. Non-Cryst. Solids 238 115

    [12]

    Tverjanovich A, Tveryanovich YS Loheider S 1996 J. Non-Cryst. Solids 208 49

    [13]

    Guo H, Zhai Y, Tao H, Dong G Zhao X 2007 Maters Sci. EngB-Adv. 138 235

    [14]

    Lin C, Calvez L, Tao H, Allix M, Moréac A, Zhang X Zhao X 2011 J. Solid. State. Chem. 184 584

    [15]

    Tikhomirov V K, Kotsalas I P, Raptis C Parshin D A 1998 Solid. State. Commun. 106 145

    [16]

    Tao H, Lin C, Gong Y, Mao S Zhao X 2008 Optoelectron. Adv. Mater. 2 29

    [17]

    Lucovsky G, deNeufville J P, Galeener F L 1974 Phys. Rev. B 9 1591

    [18]

    Crnosek Z, Crnosková E Benes L 1997 J. Mol. Struct. 435 193

    [19]

    Tao H, Zhao X, Jing C, Yang H, Mao S 2005 Solid State Commun. 133 327

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  • Received Date:  12 December 2011
  • Accepted Date:  04 January 2012
  • Published Online:  05 August 2012

Compositional dependence of crystallization behavior in GeS2-Ga2S3-CsI chalcogenide glass

  • 1. College of Materials Science & Chemical Engineering, Ningbo University, Ningbo 315201, China;
  • 2. Laboratory of Infrared Materials and Devices, Ningbo University, Ningbo 315211, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 61108057), the Natural Science Foundation of Zhejiang Province, China (Grant No. Y4110322), the Natural Science Foundation of Ningbo, China (Grant No. 2011A610091), and the K. C. Wong Magna Foundation of Ningbo University, China.

Abstract: Controllable precipitation of crystals is one of the key points in the fabrication of chalcogenide glass-ceramics. Glass compositions of 65GeS225Ga2S310CsI (GGC25) and 70GeS220Ga2S310CsI (GGC20) are specifically selected, and their glass-ceramic samples are obtained by careful heat treatment. The transmission spectra, grain sizes, and crystal phases of obtained samples are characterized using visible-near IR spectroscopy, SEM, XRD, and Raman scattering. Different crystallization behaviors are evidenced that GeS2 crystals are precipitated in GGC20 glass, and GGC25 samples show two crystallization mechanisms during the heat treatment, that is, Ga2S3 crystals were first precipitated and then the GeS2 ones. The compositional and the microstructural dependences of crystallization behavior are discussed, which would be a significant reference for the controllable crystallization in chalcogenide glasses.

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