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Research on the V-shape folded rectangular groove slow-wave structure

Liu Yang Xu Jin Xu Xiong Shen Fei Wei Yan-Yu Huang Min-Zhi Tang Tao Wang Wen-Xiang Gong Yu-Bin

Research on the V-shape folded rectangular groove slow-wave structure

Liu Yang, Xu Jin, Xu Xiong, Shen Fei, Wei Yan-Yu, Huang Min-Zhi, Tang Tao, Wang Wen-Xiang, Gong Yu-Bin
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  • A novel slow-wave structure called V-shape folded rectangular groove waveguide is proposed. This structure evolves from a conventional rectangular groove waveguide bending the groove with V-shape along its longitudinal direction, and the gap between metal plates forms a sheet electron beam channel naturally. Compared with the traditional U-shape structure, it can increase the interaction area without changing good high-frequency properties, which can adopt the sheet electron beam with a larger area to acquire more output power. In this paper, the high-frequency properties of this structure are analyzed, the interaction circuit for the V-band TWT is designed and the PIC simulation is performed to predict the operating characteristics. From our calculations, this tube can produce average saturation output power over 1000 Watts in a frequency range from 58 GHz to 64 GHz when the cathode voltage and beam current are set to be 12.8 kV and 600 mA respectively. The corresponding saturation gain and electron efficiency can reach over 33 dB and 13.2% respectively.
    • Funds: Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No. 61125103), the Vacuum Electronics National Lab Foundation (Grant No. 9140C050101110C0501), and the Fundamental Research Funds for the Central Universities (Grant Nos. ZYGX2009Z003, ZYGX2010J054).
    [1]

    Feng J J, Hu Y F, Cai J, Wu X P, Tang Y 2010 Vacuum Electronics 02 27 (in Chinese) [冯进军, 胡银富, 蔡军, 邬显平, 唐烨 2010 真空电子技术 02 24]

    [2]

    Ding Y G, Liu P K, Zhang Z C, Wang Y 2011 Proceedings of IEEE International Vacuum Electronics Conference Bangalore, India, Feb. 21—24, 2011 p525

    [3]

    Safier P N, Dronov V, Antonsen T M, Qiu J X, Danly B G, Levush B 2006 IEEE Trans. Microw. Theory Tech. 54 3605

    [4]

    Kornfeld G K, Bosch E, Gerum W, Fleury G 2001 IEEE Trans. Electron Devices 48 68

    [5]

    Feng J J, Qu B 2010 Vacuum Electronics 02 16 (in Chinese) [冯进军, 瞿波 2010 真空电子技术 02 16]

    [6]

    Vancil B K 2004 Proceedings of the 5th International Vacuum Electron Sources Conference Beijing, China, Sept. 6—10, 2004 p23

    [7]

    Parker R K, Abrams R H, Jr., Danly B G, Levush B 2002 IEEE Trans. Microw. Theory Tech. 50 835

    [8]

    Abrams R H, Levush B, Mondelli A A, Parker R K 2001 IEEE Microwave Magazine 2 61

    [9]

    Hu Y L, Yang Z H, Li B, Li J Q, Huang T, Jin X L, Zhu X F, Liang X P 2010 Acta. Phys. Sin. 59 5439 (in Chinese) [胡玉禄, 杨中海, 李斌, 李建清, 黄桃, 金晓林, 朱小芳, 梁献晋 2010 物理学报 59 5439]

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    Hao B L, Xiao L, Liu P K, Li G C, Jiang Y, Yi H X, Zhou W 2009 Acta. Phys. Sin. 58 3118 (in Chinese) [郝保良, 肖刘, 刘濮鲲, 李国超, 姜勇, 易红霞, 周伟 2009 物理学报 58 3118]

    [11]

    Cui J, Luo J R, Zhu M, Guo Wei 2011 Acta. Phys. Sin. 60 051101 (in Chinese) [崔健, 罗积润, 朱敏, 郭炜 2011 物理学报 60 051101]

    [12]

    Cui J, Luo J R, Zhu M, Guo Wei 2011 Acta. Phys. Sin. 60 061101 (in Chinese) [崔健, 罗积润, 朱敏, 郭炜 2011 物理学报 60 061101]

    [13]

    He J, Wei Y Y, Gong Y B, Wang W X 2010 Acta. Phys. Sin. 59 2843 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 王文祥 2010 物理学报 59 2843]

    [14]

    He J, Wei Y Y, Gong Y B, Wang W X 2010 Acta. Phys. Sin. 59 6659 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 路志刚, 王文祥 2010 物理学报 59 6659]

    [15]

    Zhang C Q, Gong Y B, Wei Y Y, Wang W X 2010 Acta. Phys. Sin. 59 6653 (in Chinese) [张常青, 宫玉彬, 魏彦玉, 王文祥 2010 物理学报 59 6653]

    [16]

    He J, Wei Y Y, Gong Y B, Wang W X 2011 Chin. Phys. B 20 054102

    [17]

    Zheng R L, Ohlckers P, Chen X Y 2011 IEEE Trans. Electron Devices 58 2164

    [18]

    Wang W X, Tang T, Yue L N, Zhao G Q, Wei Y Y, Gong Y B Clinese Patent 200910060072.4[2009-07022] (in Chinese) [王文祥, 唐涛, 岳玲娜, 赵国庆, 魏彦玉, 宫玉彬 中国专利 200910060072.4 [2009-07-22]]

    [19]

    Tian Y Y, Yue L N, Xu X, Wang W X, Xu J, Wei Y Y, Gong Y B 2011 Proceedings of the 18th Institute of Chinese Electronics Conf. on Microwave tubes Hunan, China, Aug. 20—23 2011 p61(in Chinese) [田艳艳, 岳玲娜, 许雄, 王文祥, 徐进, 魏彦玉, 宫玉彬 2011 中国电子学会真空电子分会第十八届学术年会湖南、张家界 Aug. 20—23 2011 p61]

    [20]

    Xue D H, Wang W X, Yue L N, Wei Y Y, Gong Y B 2006 Vacuum Electronics 03 11 (in Chinese) [薛东海, 王文祥, 岳玲娜, 魏彦玉, 宫玉彬 2006 真空电子技术 03 11]

    [21]

    Tischer F J 1963 IEEE Trans. Microw. Theory Tech. 11 291

    [22]

    Liu J Y, Qin J Z Chinese Journal of Radio Science 1991 Z1 443 (In Chinese) [刘金莹, 秦建章 电波科学学报 1991 Z1 443]

    [23]

    Wilson J D, Kory C L 1995 IEEE Trans. Electron Devices 42 2015

    [24]

    Baig A, Wang J X, Barnett L R, N L Jr, Shin Y M 2011 Proceedings of IEEE International Vacuum Electronics Conference Bangalore, India, Feb. 21—24, 2011 p351

    [25]

    Nguyen K T, Pasour J A 2009 IEEE trans. Electron devices 55 744

    [26]

    Wilson J D, Ramins P, Force D A 1991 Proceedings of International Electron Devices Meeting Washington, USA, Dec. 8—11, 1991 p585

    [27]

    Liu Y, Gong Y B, Wei Y Y, Xu J, Duan Z Y, Wang W X 2010 Proceedings of 8th International Vacuum Electron Sources Conference and NANO carbon Nanjing, China, Oct. 14—16, 2010 p249

  • [1]

    Feng J J, Hu Y F, Cai J, Wu X P, Tang Y 2010 Vacuum Electronics 02 27 (in Chinese) [冯进军, 胡银富, 蔡军, 邬显平, 唐烨 2010 真空电子技术 02 24]

    [2]

    Ding Y G, Liu P K, Zhang Z C, Wang Y 2011 Proceedings of IEEE International Vacuum Electronics Conference Bangalore, India, Feb. 21—24, 2011 p525

    [3]

    Safier P N, Dronov V, Antonsen T M, Qiu J X, Danly B G, Levush B 2006 IEEE Trans. Microw. Theory Tech. 54 3605

    [4]

    Kornfeld G K, Bosch E, Gerum W, Fleury G 2001 IEEE Trans. Electron Devices 48 68

    [5]

    Feng J J, Qu B 2010 Vacuum Electronics 02 16 (in Chinese) [冯进军, 瞿波 2010 真空电子技术 02 16]

    [6]

    Vancil B K 2004 Proceedings of the 5th International Vacuum Electron Sources Conference Beijing, China, Sept. 6—10, 2004 p23

    [7]

    Parker R K, Abrams R H, Jr., Danly B G, Levush B 2002 IEEE Trans. Microw. Theory Tech. 50 835

    [8]

    Abrams R H, Levush B, Mondelli A A, Parker R K 2001 IEEE Microwave Magazine 2 61

    [9]

    Hu Y L, Yang Z H, Li B, Li J Q, Huang T, Jin X L, Zhu X F, Liang X P 2010 Acta. Phys. Sin. 59 5439 (in Chinese) [胡玉禄, 杨中海, 李斌, 李建清, 黄桃, 金晓林, 朱小芳, 梁献晋 2010 物理学报 59 5439]

    [10]

    Hao B L, Xiao L, Liu P K, Li G C, Jiang Y, Yi H X, Zhou W 2009 Acta. Phys. Sin. 58 3118 (in Chinese) [郝保良, 肖刘, 刘濮鲲, 李国超, 姜勇, 易红霞, 周伟 2009 物理学报 58 3118]

    [11]

    Cui J, Luo J R, Zhu M, Guo Wei 2011 Acta. Phys. Sin. 60 051101 (in Chinese) [崔健, 罗积润, 朱敏, 郭炜 2011 物理学报 60 051101]

    [12]

    Cui J, Luo J R, Zhu M, Guo Wei 2011 Acta. Phys. Sin. 60 061101 (in Chinese) [崔健, 罗积润, 朱敏, 郭炜 2011 物理学报 60 061101]

    [13]

    He J, Wei Y Y, Gong Y B, Wang W X 2010 Acta. Phys. Sin. 59 2843 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 王文祥 2010 物理学报 59 2843]

    [14]

    He J, Wei Y Y, Gong Y B, Wang W X 2010 Acta. Phys. Sin. 59 6659 (in Chinese) [何俊, 魏彦玉, 宫玉彬, 段兆云, 路志刚, 王文祥 2010 物理学报 59 6659]

    [15]

    Zhang C Q, Gong Y B, Wei Y Y, Wang W X 2010 Acta. Phys. Sin. 59 6653 (in Chinese) [张常青, 宫玉彬, 魏彦玉, 王文祥 2010 物理学报 59 6653]

    [16]

    He J, Wei Y Y, Gong Y B, Wang W X 2011 Chin. Phys. B 20 054102

    [17]

    Zheng R L, Ohlckers P, Chen X Y 2011 IEEE Trans. Electron Devices 58 2164

    [18]

    Wang W X, Tang T, Yue L N, Zhao G Q, Wei Y Y, Gong Y B Clinese Patent 200910060072.4[2009-07022] (in Chinese) [王文祥, 唐涛, 岳玲娜, 赵国庆, 魏彦玉, 宫玉彬 中国专利 200910060072.4 [2009-07-22]]

    [19]

    Tian Y Y, Yue L N, Xu X, Wang W X, Xu J, Wei Y Y, Gong Y B 2011 Proceedings of the 18th Institute of Chinese Electronics Conf. on Microwave tubes Hunan, China, Aug. 20—23 2011 p61(in Chinese) [田艳艳, 岳玲娜, 许雄, 王文祥, 徐进, 魏彦玉, 宫玉彬 2011 中国电子学会真空电子分会第十八届学术年会湖南、张家界 Aug. 20—23 2011 p61]

    [20]

    Xue D H, Wang W X, Yue L N, Wei Y Y, Gong Y B 2006 Vacuum Electronics 03 11 (in Chinese) [薛东海, 王文祥, 岳玲娜, 魏彦玉, 宫玉彬 2006 真空电子技术 03 11]

    [21]

    Tischer F J 1963 IEEE Trans. Microw. Theory Tech. 11 291

    [22]

    Liu J Y, Qin J Z Chinese Journal of Radio Science 1991 Z1 443 (In Chinese) [刘金莹, 秦建章 电波科学学报 1991 Z1 443]

    [23]

    Wilson J D, Kory C L 1995 IEEE Trans. Electron Devices 42 2015

    [24]

    Baig A, Wang J X, Barnett L R, N L Jr, Shin Y M 2011 Proceedings of IEEE International Vacuum Electronics Conference Bangalore, India, Feb. 21—24, 2011 p351

    [25]

    Nguyen K T, Pasour J A 2009 IEEE trans. Electron devices 55 744

    [26]

    Wilson J D, Ramins P, Force D A 1991 Proceedings of International Electron Devices Meeting Washington, USA, Dec. 8—11, 1991 p585

    [27]

    Liu Y, Gong Y B, Wei Y Y, Xu J, Duan Z Y, Wang W X 2010 Proceedings of 8th International Vacuum Electron Sources Conference and NANO carbon Nanjing, China, Oct. 14—16, 2010 p249

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  • Received Date:  13 November 2011
  • Accepted Date:  04 December 2011
  • Published Online:  05 August 2012

Research on the V-shape folded rectangular groove slow-wave structure

  • 1. National Key Laboratory of Science and Technology on Vacuum Electronics, School of Physical Electronics University of Electronic Science and Technology of China, Chengdu 610054, China
Fund Project:  Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No. 61125103), the Vacuum Electronics National Lab Foundation (Grant No. 9140C050101110C0501), and the Fundamental Research Funds for the Central Universities (Grant Nos. ZYGX2009Z003, ZYGX2010J054).

Abstract: A novel slow-wave structure called V-shape folded rectangular groove waveguide is proposed. This structure evolves from a conventional rectangular groove waveguide bending the groove with V-shape along its longitudinal direction, and the gap between metal plates forms a sheet electron beam channel naturally. Compared with the traditional U-shape structure, it can increase the interaction area without changing good high-frequency properties, which can adopt the sheet electron beam with a larger area to acquire more output power. In this paper, the high-frequency properties of this structure are analyzed, the interaction circuit for the V-band TWT is designed and the PIC simulation is performed to predict the operating characteristics. From our calculations, this tube can produce average saturation output power over 1000 Watts in a frequency range from 58 GHz to 64 GHz when the cathode voltage and beam current are set to be 12.8 kV and 600 mA respectively. The corresponding saturation gain and electron efficiency can reach over 33 dB and 13.2% respectively.

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