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The progress of flexible organic field-effect transistors

Dong Jing Chai Yu-Hua Zhao Yue-Zhi Shi Wei-Wei Guo Yu-Xiu Yi Ming-Dong Xie Ling-Hai Huang Wei

The progress of flexible organic field-effect transistors

Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei
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  • Flexible organic field-effect transistors (OFETs) have revealed wide prospect in their applications to the flexible display, flexible sensor, flexible radio frequency tag and flexible integrated circuit due to their advantages such as foldability, light weight of device and low-cost fabrication process. On the basis of the introduction of advancement in the study of flexible OFETs in this paper, a broad overview about device structures of flexible OFETs, substrate materials, gate insulating layer materials, active layer materials and electrode materials used for flexible OFETs is given, the fabricating process of flexible OFETs is explained, and the effect of bending pattern on the performance of flexible OFETs is discussed. Finally, the application areas of flexible OFETs are summarized and prospected.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB933301, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 21144004), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012431, BK2011761, SBK201122680), the Jiangsu Planned Projects for Postdoctoral Research, China (Grant No. BH-Z07233), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Starting Foundation of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY211022, NY210002, NY210030).
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  • [1]

    Zhang F, Funahashi M, Tamaoki N 2010 Org. Electron. 11 363

    [2]

    Kawasaki N, Kalb W L, Mathis T, Kaji Y, Mitsuhashi R, Okamoto H, Sugawara Y, Fujiwara A, Kubozono Y, Batlogg B 2010 Appl. Phys. Lett. 96 113305

    [3]

    Park Y, Han K S, Lee B H, Cho S, Lee K H, Im S, Sung M M 2011 Org. Electron. 12 348

    [4]

    Backlund T G, Sandberg H G O, Osterbacka R, Stubb H, Makela T, Jussila S 2005 Synthetic. Met. 148 87

    [5]

    Gburek B, Wagner V 2010 Org. Electron. 11 814

    [6]

    Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047

    [7]

    Lim H, Bae C M, Kim Y K, Park C H, Cho W J, Ha C S 2003 Synthetic. Met. 135 49

    [8]

    Lim H, Cho W J, Ha C S, Ando S, Kim Y K, Park C H, Lee K 2002 Adv. Mater. 14 1275

    [9]

    Roberts M E, Mannsfeld S C B, Stoltenberg R M, Bao Z 2009 Org. Electron. 10 377

    [10]

    Tan H S, Mathews N, Cahyadi T, Zhu F R, Mhaisalkar S G 2009 Appl. Phys. Lett. 94 263303

    [11]

    Dimitrakopoulos C D, Purushothaman S, Kymissis J, Callegari A, Shaw J M 1999 Science 283 822

    [12]

    Chang M F, Lee P T, McAlister S P, Chin A 2009 IEEE Electron Dev. Lett. 30 133

    [13]

    Tan H S, Cahyadi T, Wang Z B, Lohani A, Tsakadze Z, Zhang S, Zhu F R, Mhaisalkar S G 2008 IEEE Electron Dev. Lett. 29 698

    [14]

    Briseno A L, Tseng R J, Ling M M, Falcao E H L, Yang Y, Wudl F, Bao Z 2006 Adv. Mater. 18 2320

    [15]

    Sung C F, Kekuda D, Chu L F, Lee Y Z, Chen F C, Wu M C, Chu C W 2009 Adv. Mater. 21 4845

    [16]

    Chang J W, Wang C G, Huang C Y, Tsai T D, Guo T F, Wen T C 2011 Adv. Mater. 23 4077

    [17]

    Kim B J, Jang H, Lee S K, Hong B H, Ahn J H, Cho J H 2010 Nano Lett. 10 3464

    [18]

    Wang C H, Hsieh C Y, Hwang J C 2011 Adv. Mater. 23 1630

    [19]

    Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108

    [20]

    Zirkl M, Haase A, Fian A, Schon H, Sommer C, Jakopic G, Leising G, Stadlober B, Graz I, Gaar N, Schwodiauer R, Bauer-Gogonea S, Bauer S 2007 Adv. Mater. 19 2241

    [21]

    Sidler K, Cvetkovic N V, Savu V, Tsamados D, Ionescu A M, Brugger J 2010 Sensor. Actua. {A-Phys.} 162 155

    [22]

    Lee W H, Park J, Sim S H, Jo S B, Kim K S, Hong B H, Cho K 2011 Adv. Mater. 23 1752

    [23]

    Liu P, Wu Y L, Li Y N, Ong B S, Zhu S P 2006 J. Am. Chem. Soc. 128 4554

    [24]

    Graz I M, Lacour S P 2009 Appl. Phys. Lett. 95 243305

    [25]

    Zhao Y H, Dong G F, Wang L D, Qiu Y 2007 Chin. Phys. Lett. 24 1664

    [26]

    Zyung T, Kim S H, Chu H Y, Lee J H, Lim S C, Lee J I, Oh J 2005 Proc. IEEE 93 1265

    [27]

    Liu Z, Oh J H, Roberts M E, Wei P, Paul B C, Okajima M, Nishi Y, Bao Z 2009 Appl. Phys. Lett. 94 203301

    [28]

    Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红2009 物理学报 58 8566]

    [29]

    Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015

    [30]

    Zschieschang U, Ante F, Yamamoto T, Takimiya K, Kuwabara H, Ikeda M, Sekitani T, Someya T, Kern K, Klauk H 2010 Adv. Mater. 22 982

    [31]

    Fujisaki Y, Nakajima Y, Kumaki D, Yamamoto T, Tokito S, Kono T, Nishida J I, Yamashita Y 2010 Appl. Phys. Lett. 97 133303

    [32]

    Bradley K, Gabriel J C P, Gruner G 2003 Nano Lett. 3 1353

    [33]

    Hur S H, Park O O, Rogers J A 2005 Appl. Phys. Lett. 86 243502

    [34]

    Cao Q, Hur S H, Zhu Z T, Sun Y G, Wang C J, Meitl M A, Shim M, Rogers J A 2006 Adv. Mater. 18 304

    [35]

    Jiang C X, Yang X Y, Zhao K, Wu X M, Yang L Y, Cheng X M, Wei J, Yin S G 2011 Chin. Phys. Lett. 28 127203

    [36]

    Suganuma K, Watanabe S, Gotou T, Ueno K 2011 Appl. Phys. Express 4 021603

    [37]

    Huang J, Hines D R, Jung B J, Bronsgeest M S, Tunnell A, Ballarotto V, Katz H E, Fuhrer M S, Williams E D, Cumings J 2011 Org. Electron. 12 1471

    [38]

    Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M, Hosono H 2004 Nature 432 488

    [39]

    Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308

    [40]

    Lee W H, Lim J A, Kwak D, Cho J H, Lee H S, Choi H H, Cho K 2009 Adv. Mater. 21 4243

    [41]

    Seol Y G, Lee N E, Park S H, Bae J Y 2008 Org. Electron. 9 413

    [42]

    Smith J, Hamilton R, McCulloch I, Heeney M, Anthony J E, Bradley D D C, Anthopoulos T D 2009 Synthetic. Met. 159 2365

    [43]

    Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2011 Chin. Phys. B 20 017306

    [44]

    Chen Y, Xu Y, Zhao K, Wan X, Deng J, Yan W 2010 Nano Res. 3 714

    [45]

    Minemawari H, Yamada T, Matsui H, Tsutsumi J, Haas S, Chiba R, Kumai R, Hasegawa T 2011 Nature 475 364

    [46]

    Baldo M, Deutsch M, Burrows P, Gossenberger H, Gerstenberg M, Ban V, Forrest S 1998 Adv. Mater. 10 1505

    [47]

    Shtein M, Gossenberger H F, Benziger J B, Forrest S R 2001 J. Appl. Phys. 89 1470

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    Crone B, Dodabalapur A, Lin Y Y, Filas R W, Bao Z, LaDuca A, Sarpeshkar R, Katz H E, Li W 2000 Nature 403 521

    [49]

    Lovinger A J, Rothberg L J 1996 J. Mater. Res. 11 1581

    [50]

    Xu G F, Bao Z N, Groves J T 1998 Abstr. Paper Am. Chem. Soc. 216 U802

    [51]

    Minari T, Liu C, Kano M, Tsukagoshi K 2012 Adv. Mater. 24 299

    [52]

    Dimitrakopoulos C D, Mascaro D J 2001 IBM J. Res. Dev. 45 11

    [53]

    Yin Z, Huang Y, Bu N, Wang X, Xiong Y 2010 Chin. Sci. Bull. 55 3383

    [54]

    Paloheimo J, Kuivalainen P, Stubb H, Vuorimaa E, Ylilahti P 1990 Appl. Phys. Lett. 56 1157

    [55]

    Yoon B, Ham D Y, Yarimaga O, An H, Lee C W, Kim J M 2011 Adv. Mater. 23 5492

    [56]

    Shekar B C, Lee J Y, Rhee S W 2004 Korean J. Chem. Eng. 21 267

    [57]

    Forrest S R 2004 Nature 428 911

    [58]

    Seol Y G, Noh H Y, Lee S S, Ahn J H, Lee N E 2008 Appl. Phys. Lett. 93 013305

    [59]

    Wang H, Li C H, Wang L J, Wang H B, Yan D H 2010 Chin. Phys. Lett. 27 28502

    [60]

    Kodaira T, Hirabayashi S, Komatsu Y, Miyasaka M, Kawai H, Nebashi S, Inoue S, Shimoda T 2008 J. Soc. Inf. Display 16 107

    [61]

    Gleskova H, Wagner S, Soboyejo W, Suo Z 2002 J. Appl. Phys. 92 6224

    [62]

    Han L, Song K, Mandlik P, Wagner S 2010 Appl. Phys. Lett. 96 042111

    [63]

    Sekitani T, Iba S, Kato Y, Noguchi Y, Someya T, Sakurai T 2005 Appl. Phys. Lett. 87 173502

    [64]

    Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309

    [65]

    Qiu Y, Hu Y C, Dong G F, Wang L D, Xie J F, Ma Y N 2003 Chin. Sci. Bull. 48 1554

    [66]

    Gelinck G, Heremans P, Nomoto K, Anthopoulos T D 2010 Adv. Mater. 22 3778

    [67]

    Gelinck G H, Huitema H E A, van Veenendaal E, Cantatore E, Schrijnemakers L, van der Putten J, Geuns T C T, Beenhakkers M, Giesbers J B, Huisman B H, Meijer E J, Benito E M, Touwslager F J, Marsman A W, van Rens B J E, de Leeuw D M 2004 Nat. Mater. 3 106

    [68]

    Sekitani T, Noguchi Y, Hata K, Fukushima T, Aida T, Someya T 2008 Science 321 1468

    [69]

    Zhou L, Wanga A, Wu S C, Sun J, Park S, Jackson T N 2006 Appl. Phys. Lett. 88 083502

    [70]

    Mannsfeld S C B, Tee B C K, Stoltenberg R M, Chen C V H H, Barman S, Muir B V O, Sokolov A N, Reese C, Bao Z 2010 Nat. Mater. 9 859

    [71]

    Baude P F, Ender D A, Haase M A, Kelley T W, Muyres D V, Theiss S D 2003 Appl. Phys. Lett. 82 3964

    [72]

    Klauk H, Zschieschang U, Pflaum J, Halik M 2007 Nature 445 745

    [73]

    Yan H, Zheng Y, Blache R, Newman C, Lu S, Woerle J, Facchetti A 2008 Adv. Mater. 20 3393

    [74]

    Huitema H E A, Gelinck G H, van der Putten J, Kuijk K E, Hart C M, Cantatore E, Herwig P T, van Breemen A, de Leeuw D M 2001 Nature 414 599

    [75]

    Rogers J A, Bao Z 2002 J. Polym. Sci. Pol. Chem. 40 3327

    [76]

    Rogers J A, Bao Z, Baldwin K, Dodabalapur A, Crone B, Raju V R, Kuck V, Katz H, Amundson K, Ewing J, Drzaic P 2001 Proc. Natl. Acad. Sci. USA 98 4835

    [77]

    Jain K, Klosner M, Zemel M, Raghunandan S 2005 Proc. IEEE 93 1500

    [78]

    Chen Y, Au J, Kazlas P, Ritenour A, Gates H, McCreary M 2003 Nature 423 136

    [79]

    Someya T, Kawaguchi H, Sakurai T 2004 2004 IEEE International Solid-State Circuits Conference, Digest of Technical Papers pp288--289

    [80]

    Someya T, Sekitani T, Iba S, Kato Y, Kawaguchi H, Sakurai T 2004 Proc. Natl. Acad. Sci. USA 101 9966

    [81]

    Someya T, Pal B, Huang J, Katz H E 2008 MRS Bull. 33 690

    [82]

    Subramanian V, Frechet J M J, Chang P C, Huang D C, Lee J B, Molesa S E, Murphy A R, Redinger D R 2005 Proc. IEEE 93 1330

    [83]

    Drury C J, Mutsaers C M J, Hart C M, Matters M, de Leeuw D M 1998 Appl. Phys. Lett. 73 108

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  • Received Date:  02 July 2012
  • Accepted Date:  15 September 2012
  • Published Online:  20 February 2013

The progress of flexible organic field-effect transistors

  • 1. School of Electrical and Information, Northeast AgriculturalUniversity, Haerbin 150030, China;
  • 2. Institute of Advanced Materials, Nanjing University of Posts and Telecommunacations, Nanjing 210046, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB933301, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 21144004), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012431, BK2011761, SBK201122680), the Jiangsu Planned Projects for Postdoctoral Research, China (Grant No. BH-Z07233), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Starting Foundation of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY211022, NY210002, NY210030).

Abstract: Flexible organic field-effect transistors (OFETs) have revealed wide prospect in their applications to the flexible display, flexible sensor, flexible radio frequency tag and flexible integrated circuit due to their advantages such as foldability, light weight of device and low-cost fabrication process. On the basis of the introduction of advancement in the study of flexible OFETs in this paper, a broad overview about device structures of flexible OFETs, substrate materials, gate insulating layer materials, active layer materials and electrode materials used for flexible OFETs is given, the fabricating process of flexible OFETs is explained, and the effect of bending pattern on the performance of flexible OFETs is discussed. Finally, the application areas of flexible OFETs are summarized and prospected.

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