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The influence of the excition recombination zone on the organic magnetic-field effect

Li Dong-Mei Wang Guan-Yong Zhang Qiao-Ming You Yin-Tao Xiong Zu-Hong

The influence of the excition recombination zone on the organic magnetic-field effect

Li Dong-Mei, Wang Guan-Yong, Zhang Qiao-Ming, You Yin-Tao, Xiong Zu-Hong
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  • In this work we explore the influence of the exciton recombination zone (RZ) on magnetic-field effect in tris-(8-hydroxyquinolinato) aluminum (Alq3) based organic light-emitting diodes by changing the thickness of Alq3. The magneto-electroluminescence and magneto-conductance (MC) in these devices are investigated at various temperatures and bias voltages. It is found that the sign of MC changes from positive to negative, and then back to positive with the reduction of the thickness of Alq3 at 50 K. The phenomenon observed is ascribed to the change of the exciton density in the exciton RZ. Based on the mechanisms including the hyperfine mixing, the triplet-charge interaction and interfacial dissociation or quenching of excitons, the observed results are explained qualitatively.
    • Funds: Project supported by Nature Science Foundation of Chongqing, China (Grant No. 2010BA6002), the National Natural Science Foundation of China (Grant No. 10974157), the Open Project Support by State Key Laboratory of Surface Physics and Department of Physics, China (Grant No. KL2011_06), and the National University Student Innovation Program, China (Grant No. 201210635129).
    [1]

    Kalinowski J, Cocchi M, Virgili D, Marco D P, Fattori V 2003 Chem. Phys. Lett. 380 710

    [2]

    Nguyen T D, Sheng Y, Rybicki J, Wohlgenannt M 2008 Phys. Rev. B 77 235209

    [3]

    Hu B, Wu Y 2007 Nat. Mater. 6 985

    [4]

    Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J. Appl. Phys. 102 073710

    [5]

    Bobbert P A, Nguyen T D, Van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801

    [6]

    Bloom F L, Wagemans W, Kemerink M, Koopmans B 2007 Phys. Rev. Lett. 99 257201

    [7]

    Li F, Xin L Y, Liu S Y, Hu B 2010 Appl. Phys. Lett. 97 073301

    [8]

    Wang Z, He Z H, Tan X W, Tao M L, Li G Q, Xiong Z H 2007 Acta Phys. Sin. 56 2979 (in Chinese) [王振, 何正红, 谭兴文, 陶敏龙, 李国庆, 熊祖洪 2007 物理学报 56 2979]

    [9]

    Chen P, Lei Y L, Song Q L, Zhang Y, Liu R, Zhang Q M, Xiong Z H 2009 Appl. Phys. Lett. 95 213304

    [10]

    Lei Y L, Song Q L, Xiong Z H 2012 Chin. Sci. Bull. 55 2361

    [11]

    Veeraraghavan G, Nguyen T D, Sheng Y, Mermer Ö, Wohlgenannt M 2007 IEEE. Trans. Electr. Dev. 54 1571

    [12]

    Ren J F, Fu J Y, Liu D S, Xie S J 2004 Acta Phys. Sin. 53 3814 (in Chinese) [任俊峰, 付吉永, 刘德胜, 谢士杰 2004 物理学报 53 3814]

    [13]

    Buchschuster A, Schmidt T D, Brtting W 2012 Appl. Phys. Lett. 100 123302

    [14]

    Liu R, Zhang Y, Lei Y L, Chen P, Zhang Q M, Xiong Z H 2010 Acta Phys. Sin. 59 4283 (in Chinese) [刘荣, 张勇, 雷衍连, 陈平, 张巧明, 熊祖洪 2010 物理学报 59 4283]

    [15]

    Khalifa M B, Vaufrey D, Tardy J 2004 Org. Electron. 5 187

    [16]

    Xie Z Y, Huang L S, Lee S T 2001 Appl. Phys. Lett. 79 1048

    [17]

    Wu Y Z, Zhang W L, Ni W D, Zhang C R, Zhang D J 2012 Acta Phys. Sin. 61 098101 (in Chinese) [吴有智, 张文林, 倪蔚德, 张材荣, 张定军 2012 物理学报 61 098101]

    [18]

    Lei Y L, Zhang Y, Liu R, Chen P, Song Q L, Xiong Z H 2009 Org. Electron. 10 889

    [19]

    Chen P, Lei Y L, Song Q L, Zhang Y, Liu R, Zhang Q M, Xiong Z H 2010 Appl. Phys. Lett. 96 203303

    [20]

    Lei Y L, Song Q L, Zhang Y, Chen P, Liu R, Zhang Q M, Xiong Z H 2009 Org. Electron. 10 1288

    [21]

    Zhang Q M, Chen P, Lei Y L, Liu R, Zhang Y, Song Q L, Huang C Z, Xiong Z H 2010 Sci. China G 40 1507 (in Chinese) [张巧明, 陈平, 雷衍连, 刘荣, 张勇, 宋群梁, 黄承志, 熊祖洪 2010 中国科学 40 1507]

    [22]

    Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese) [任俊峰, 张玉滨, 谢士杰 2004 物理学报 56 4785]

    [23]

    Chen P, Li M L, Peng Q M, Li F, Liu Y, Zhang Q M, Zhang Y, Xiong Z H 2012 Org. Electron. 13 1774

    [24]

    Zhang Y, Liu R, Lei Y L, Xiong Z H 2009 Appl. Phys. Lett. 94 083307

    [25]

    Fong H H, Choy W C H, Hui K N, Liang Y J 2006 Appl. Phys. Lett. 88 113510

    [26]

    Jiao W, Lei Y L, Zhang Q M, Liu Y L, Chen L, You Y T, Xiong Z H 2012 Acta Phys. Sin. 61 187305 (in Chinese) [焦威, 雷衍连, 张巧明, 刘亚莉, 陈林, 游胤涛, 熊祖洪 2012 物理学报 61 187305]

    [27]

    Wang X P, Mi B X, Gao Z Q, Guo Q, Huang W 2011 Acta Phy. Sin. 60 087808 (in Chinese) [王旭鹏, 密保秀, 高志强, 郭晴, 黄维 2011 物理学报 60 087808]

    [28]

    Zhu Z E, Zhang Y W, An Z L, Zheng F H 2012 Acta Phys. Sin. 61 067701 (in Chinese) [朱智恩, 张冶文, 安振连, 郑飞虎 2012 物理学报 61 067701]

    [29]

    Karl N 2003 Synth. Met. 133 649

    [30]

    Peng Q M, Sun J X, Li X J, Li M L, Li F 2011 Appl. Phys. Lett. 99 033509

    [31]

    Davis A H, Bussmann K 2004 J. Vac. Sci. Technol. A 22 1885

    [32]

    Chen P, Song Q L, Choy W C H, Ding B F, Liu Y L, Xiong Z H 2011 Appl. Phys. Lett. 99 143305

    [33]

    Merrifield R E 1968 J. Chem. Phys. 98 013510

  • [1]

    Kalinowski J, Cocchi M, Virgili D, Marco D P, Fattori V 2003 Chem. Phys. Lett. 380 710

    [2]

    Nguyen T D, Sheng Y, Rybicki J, Wohlgenannt M 2008 Phys. Rev. B 77 235209

    [3]

    Hu B, Wu Y 2007 Nat. Mater. 6 985

    [4]

    Desai P, Shakya P, Kreouzis T, Gillin W P 2007 J. Appl. Phys. 102 073710

    [5]

    Bobbert P A, Nguyen T D, Van Oost F W A, Koopmans B, Wohlgenannt M 2007 Phys. Rev. Lett. 99 216801

    [6]

    Bloom F L, Wagemans W, Kemerink M, Koopmans B 2007 Phys. Rev. Lett. 99 257201

    [7]

    Li F, Xin L Y, Liu S Y, Hu B 2010 Appl. Phys. Lett. 97 073301

    [8]

    Wang Z, He Z H, Tan X W, Tao M L, Li G Q, Xiong Z H 2007 Acta Phys. Sin. 56 2979 (in Chinese) [王振, 何正红, 谭兴文, 陶敏龙, 李国庆, 熊祖洪 2007 物理学报 56 2979]

    [9]

    Chen P, Lei Y L, Song Q L, Zhang Y, Liu R, Zhang Q M, Xiong Z H 2009 Appl. Phys. Lett. 95 213304

    [10]

    Lei Y L, Song Q L, Xiong Z H 2012 Chin. Sci. Bull. 55 2361

    [11]

    Veeraraghavan G, Nguyen T D, Sheng Y, Mermer Ö, Wohlgenannt M 2007 IEEE. Trans. Electr. Dev. 54 1571

    [12]

    Ren J F, Fu J Y, Liu D S, Xie S J 2004 Acta Phys. Sin. 53 3814 (in Chinese) [任俊峰, 付吉永, 刘德胜, 谢士杰 2004 物理学报 53 3814]

    [13]

    Buchschuster A, Schmidt T D, Brtting W 2012 Appl. Phys. Lett. 100 123302

    [14]

    Liu R, Zhang Y, Lei Y L, Chen P, Zhang Q M, Xiong Z H 2010 Acta Phys. Sin. 59 4283 (in Chinese) [刘荣, 张勇, 雷衍连, 陈平, 张巧明, 熊祖洪 2010 物理学报 59 4283]

    [15]

    Khalifa M B, Vaufrey D, Tardy J 2004 Org. Electron. 5 187

    [16]

    Xie Z Y, Huang L S, Lee S T 2001 Appl. Phys. Lett. 79 1048

    [17]

    Wu Y Z, Zhang W L, Ni W D, Zhang C R, Zhang D J 2012 Acta Phys. Sin. 61 098101 (in Chinese) [吴有智, 张文林, 倪蔚德, 张材荣, 张定军 2012 物理学报 61 098101]

    [18]

    Lei Y L, Zhang Y, Liu R, Chen P, Song Q L, Xiong Z H 2009 Org. Electron. 10 889

    [19]

    Chen P, Lei Y L, Song Q L, Zhang Y, Liu R, Zhang Q M, Xiong Z H 2010 Appl. Phys. Lett. 96 203303

    [20]

    Lei Y L, Song Q L, Zhang Y, Chen P, Liu R, Zhang Q M, Xiong Z H 2009 Org. Electron. 10 1288

    [21]

    Zhang Q M, Chen P, Lei Y L, Liu R, Zhang Y, Song Q L, Huang C Z, Xiong Z H 2010 Sci. China G 40 1507 (in Chinese) [张巧明, 陈平, 雷衍连, 刘荣, 张勇, 宋群梁, 黄承志, 熊祖洪 2010 中国科学 40 1507]

    [22]

    Ren J F, Zhang Y B, Xie S J 2007 Acta Phys. Sin. 56 4785 (in Chinese) [任俊峰, 张玉滨, 谢士杰 2004 物理学报 56 4785]

    [23]

    Chen P, Li M L, Peng Q M, Li F, Liu Y, Zhang Q M, Zhang Y, Xiong Z H 2012 Org. Electron. 13 1774

    [24]

    Zhang Y, Liu R, Lei Y L, Xiong Z H 2009 Appl. Phys. Lett. 94 083307

    [25]

    Fong H H, Choy W C H, Hui K N, Liang Y J 2006 Appl. Phys. Lett. 88 113510

    [26]

    Jiao W, Lei Y L, Zhang Q M, Liu Y L, Chen L, You Y T, Xiong Z H 2012 Acta Phys. Sin. 61 187305 (in Chinese) [焦威, 雷衍连, 张巧明, 刘亚莉, 陈林, 游胤涛, 熊祖洪 2012 物理学报 61 187305]

    [27]

    Wang X P, Mi B X, Gao Z Q, Guo Q, Huang W 2011 Acta Phy. Sin. 60 087808 (in Chinese) [王旭鹏, 密保秀, 高志强, 郭晴, 黄维 2011 物理学报 60 087808]

    [28]

    Zhu Z E, Zhang Y W, An Z L, Zheng F H 2012 Acta Phys. Sin. 61 067701 (in Chinese) [朱智恩, 张冶文, 安振连, 郑飞虎 2012 物理学报 61 067701]

    [29]

    Karl N 2003 Synth. Met. 133 649

    [30]

    Peng Q M, Sun J X, Li X J, Li M L, Li F 2011 Appl. Phys. Lett. 99 033509

    [31]

    Davis A H, Bussmann K 2004 J. Vac. Sci. Technol. A 22 1885

    [32]

    Chen P, Song Q L, Choy W C H, Ding B F, Liu Y L, Xiong Z H 2011 Appl. Phys. Lett. 99 143305

    [33]

    Merrifield R E 1968 J. Chem. Phys. 98 013510

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  • Received Date:  08 September 2012
  • Accepted Date:  17 November 2012
  • Published Online:  05 March 2013

The influence of the excition recombination zone on the organic magnetic-field effect

  • 1. School of Physical Science and Technology, MOE Key Laboratory on Luminescence and Real-Time Analysis, Southwest University, Chongqing 400715, China;
  • 2. Surface Physics Laboratory (National Key Laboratory), Fudan University, Shanghai 200433, China
Fund Project:  Project supported by Nature Science Foundation of Chongqing, China (Grant No. 2010BA6002), the National Natural Science Foundation of China (Grant No. 10974157), the Open Project Support by State Key Laboratory of Surface Physics and Department of Physics, China (Grant No. KL2011_06), and the National University Student Innovation Program, China (Grant No. 201210635129).

Abstract: In this work we explore the influence of the exciton recombination zone (RZ) on magnetic-field effect in tris-(8-hydroxyquinolinato) aluminum (Alq3) based organic light-emitting diodes by changing the thickness of Alq3. The magneto-electroluminescence and magneto-conductance (MC) in these devices are investigated at various temperatures and bias voltages. It is found that the sign of MC changes from positive to negative, and then back to positive with the reduction of the thickness of Alq3 at 50 K. The phenomenon observed is ascribed to the change of the exciton density in the exciton RZ. Based on the mechanisms including the hyperfine mixing, the triplet-charge interaction and interfacial dissociation or quenching of excitons, the observed results are explained qualitatively.

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