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Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor

Xu Li-Jun Zhang He-Ming

Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor

Xu Li-Jun, Zhang He-Ming
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  • Based on surrounding-gate schottky barrier metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation in cylindrical coordinates, and the threshold voltage model of surrounding-gate schottky barrier NMOSFET which is applicable to the low voltage of drain is built. According to the calculation results, the dependences of threshold voltage and drain-induced barrier-lowering on voltage of drain, channel radius and channel length are studied in detail, which can provide some reference for the design of surrounding-gate schottky barrier MOSFET device and circuit.
    [1]

    Gan X W, Wang X S, Zhang X 2001 Chin. J. Semicond. 22 1581 (in Chinese) [甘学温, 王旭社, 张兴 2001 半导体学报 22 1581]

    [2]

    Appenzeller J, Knoch J, Bjork M T, Riel H, Schmid H, Riess W 2008 IEEE Trans. Electron Dev. 55 2827

    [3]

    Wang X Y, Zhang H M, Wang G Y, Song J J, Qin S S, Qu J T 2011 Acta Phys. Sin. 60 027102 (in Chinese) [王晓燕, 张鹤鸣, 王冠宇, 宋建军, 秦珊珊, 屈江涛 2011 物理学报 60 027102]

    [4]

    Li C, Zhuang Y Q, Han R, Zhang L, Bao J L 2012 Acta Phys. Sin. 61 078504 (in Chinese) [李聪, 庄奕琪, 韩茹, 张丽, 包军林 2012 物理学报 61 078504]

    [5]

    Knoch J, Zhang M, Mantl S, Appenzeller J 2006 IEEE Trans. Electron Dev. 53 1669

    [6]

    Xu B J, Du G, Xia Z L, Zeng L, Han R Q, Liu X Y 2007 Chin. J. Semicond. 28 1179

    [7]

    Li P C, Hu G X, Mei G H, Liu R, Jiang Y, Tang T G 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, 1-4 Nov. 2010 p3

    [8]

    Tang X Y, Zhang Y M, Zhang Y M 2009 Acta Phys. Sin. 58 494 (in Chinese) [汤晓燕, 张义门, 张玉明 2008 物理学报 58 494]

    [9]

    Tang X Y 2007 Ph. D. Dissertation (Xi'an: Xidian University) (in Chinese) [汤晓燕 2007 博士学位论文 (西安: 西安电子科技大学)]

    [10]

    Zhu S Y, Chen J D, Li M F, Lee S J, Singh J, Zhu C X, Du A, Tung C H, Chin A, Kwong D L 2004 IEEE Electron Dev. Lett. 25 567

    [11]

    Shin M 2008 IEEE Trans. Electron Dev. 55 737

    [12]

    Shi M, Wu G Y 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi'an: Xi'an Jiaotong University Press) pp104-127 (in Chinese) [施敏, 伍国珏 2008 半导体器件物理(第3版)(西安: 西安交通大学出版社) 第104–127页]

    [13]

    Snyder J P, Helms C R, Nishi Y 1999 Appl. Phys. Lett. 74 3407

    [14]

    Zhu G J, Zhou X, Chin Y K, Pey K L, Zhang J B, See G H, Lin S H, Yan Y F, Chen Z H 2010 IEEE Trans. Electron Dev. 57 772

    [15]

    Winstead B, Ravaioli U 2000 IEEE Trans. Electron Dev. 47 1241

    [16]

    Sung D S, Ming L, Yun Y Y, Kyoung H Y, Keun H C, In K K, Hong C, Jang W J, Kim D W, Park D G, Lee W S 2007 IEEE International Electron Devices Meeting Washington D. C., 10-12 Dec. 2007 p891

  • [1]

    Gan X W, Wang X S, Zhang X 2001 Chin. J. Semicond. 22 1581 (in Chinese) [甘学温, 王旭社, 张兴 2001 半导体学报 22 1581]

    [2]

    Appenzeller J, Knoch J, Bjork M T, Riel H, Schmid H, Riess W 2008 IEEE Trans. Electron Dev. 55 2827

    [3]

    Wang X Y, Zhang H M, Wang G Y, Song J J, Qin S S, Qu J T 2011 Acta Phys. Sin. 60 027102 (in Chinese) [王晓燕, 张鹤鸣, 王冠宇, 宋建军, 秦珊珊, 屈江涛 2011 物理学报 60 027102]

    [4]

    Li C, Zhuang Y Q, Han R, Zhang L, Bao J L 2012 Acta Phys. Sin. 61 078504 (in Chinese) [李聪, 庄奕琪, 韩茹, 张丽, 包军林 2012 物理学报 61 078504]

    [5]

    Knoch J, Zhang M, Mantl S, Appenzeller J 2006 IEEE Trans. Electron Dev. 53 1669

    [6]

    Xu B J, Du G, Xia Z L, Zeng L, Han R Q, Liu X Y 2007 Chin. J. Semicond. 28 1179

    [7]

    Li P C, Hu G X, Mei G H, Liu R, Jiang Y, Tang T G 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Shanghai, 1-4 Nov. 2010 p3

    [8]

    Tang X Y, Zhang Y M, Zhang Y M 2009 Acta Phys. Sin. 58 494 (in Chinese) [汤晓燕, 张义门, 张玉明 2008 物理学报 58 494]

    [9]

    Tang X Y 2007 Ph. D. Dissertation (Xi'an: Xidian University) (in Chinese) [汤晓燕 2007 博士学位论文 (西安: 西安电子科技大学)]

    [10]

    Zhu S Y, Chen J D, Li M F, Lee S J, Singh J, Zhu C X, Du A, Tung C H, Chin A, Kwong D L 2004 IEEE Electron Dev. Lett. 25 567

    [11]

    Shin M 2008 IEEE Trans. Electron Dev. 55 737

    [12]

    Shi M, Wu G Y 2008 Physics of Semiconductor Devices (3rd Ed.) (Xi'an: Xi'an Jiaotong University Press) pp104-127 (in Chinese) [施敏, 伍国珏 2008 半导体器件物理(第3版)(西安: 西安交通大学出版社) 第104–127页]

    [13]

    Snyder J P, Helms C R, Nishi Y 1999 Appl. Phys. Lett. 74 3407

    [14]

    Zhu G J, Zhou X, Chin Y K, Pey K L, Zhang J B, See G H, Lin S H, Yan Y F, Chen Z H 2010 IEEE Trans. Electron Dev. 57 772

    [15]

    Winstead B, Ravaioli U 2000 IEEE Trans. Electron Dev. 47 1241

    [16]

    Sung D S, Ming L, Yun Y Y, Kyoung H Y, Keun H C, In K K, Hong C, Jang W J, Kim D W, Park D G, Lee W S 2007 IEEE International Electron Devices Meeting Washington D. C., 10-12 Dec. 2007 p891

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  • Received Date:  13 December 2012
  • Accepted Date:  27 December 2012
  • Published Online:  20 May 2013

Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor

  • 1. Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China

Abstract: Based on surrounding-gate schottky barrier metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation in cylindrical coordinates, and the threshold voltage model of surrounding-gate schottky barrier NMOSFET which is applicable to the low voltage of drain is built. According to the calculation results, the dependences of threshold voltage and drain-induced barrier-lowering on voltage of drain, channel radius and channel length are studied in detail, which can provide some reference for the design of surrounding-gate schottky barrier MOSFET device and circuit.

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