Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor

Xu Li-Jun; Zhang He-Ming

doi:10.7498/aps.62.108502

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Xu Li-Jun, Zhang He-Ming. Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistorJ. Acta Physica Sinica, 2013, 62(10): 108502. DOI: 10.7498/aps.62.108502

Citation:

Xu Li-Jun, Zhang He-Ming. Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistorJ. Acta Physica Sinica, 2013, 62(10): 108502. DOI: 10.7498/aps.62.108502

Citation:

Xu Li-Jun, Zhang He-Ming. Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistorJ. Acta Physica Sinica, 2013, 62(10): 108502. DOI: 10.7498/aps.62.108502