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Study on the photoluminescence properties of InN films

Wang Jian Xie Zi-Li Zhang Rong Zhang Yun Liu Bin Chen Peng Han Ping

Study on the photoluminescence properties of InN films

Wang Jian, Xie Zi-Li, Zhang Rong, Zhang Yun, Liu Bin, Chen Peng, Han Ping
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  • The photoluminescence (PL) properties of InN films grown by metal organic chemical vapor deposition (MOCVD) have been investigated. InN has a high level of background carrier concentration, which makes the Fermi level lie above the conduction band. By nonlinear fitting of the PL results, along with the energy band relations, we calculated the band gap of InN film to be 0.67 eV and the carrier concentration n=5.4×1018 cm-3. Thus we found a connection between PL results and the carrier concentration of InN films. In addition, we also studied the dependence of peak position and intensity of PL on temperature: the intensity of photoluminescence decreases as the temperature increases, and the peak position shows a red shift instead of an S-shape variation. Such a difference may be explained by a huge full width at half maximum of PL spectra. Also the concentration of carriers and the magnitude of the built-in electric field in the material may have influence on such a result.
    • Funds: Project supported by the National Basic Research of China (Grant Nos. 2011CB301900, 2012CB619304), the National Hi-tech development Program of China (Grant No. 2011AA03A103), the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, 60936004, 61176063), The Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2008019, BK2011010, BK2010385, BK2009255, BK2010178), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics.
    [1]

    Davydov V Yu, Klochikhin A A, Seisyan R P, Emtsev V V, Ivanov S V, Bechstedt F, Furthmller J, Harima H, Mudryi A V, Aderhold J, Semchinova O, Graul J 2002 Phys. Status Solidi (b) 229 R1

    [2]

    Wu J, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Lu H, Schaff W J, Yoshiki Saito Yasushi Nanishi 2002 Appl. Phys. Lett. 80 3967

    [3]

    Foutz B E, OpLeary S K, Shur M S, Eastman L F 1999 J. Appl. Phys. 85 7727

    [4]

    Bockowski M 1999 Phys. B 265 1

    [5]

    Higashiwaki M, Matsui T 2002 Jpn. J. Appl. Phys. 41 L540

    [6]

    Wang X Q, Liu S T, Ma N, Feng L, Chen G, Xu F J, Tang N 2012 Appl. Phys. Express 5 015502

    [7]

    Miller N, Ager III J W, Smith III H M, Mayer M A, Yu K M, Haller E E, Walukiewicz W, Schaff W J, Gallinat C, Koblmller G, Speck J S 2010 J. Appl. Phys. 107 103712

    [8]

    Masataka Higashiwaki, Toshiaki Matsui 2004 Journal of Crystal Growth 269 162

    [9]

    Davydov V Yu, Klochikhin A A, Emtsev V V, Kurdyukov D A, Ivanov S V, Vekshin V A, Bechstedt F Furthmller J, Aderhold J, Graul J, Mudryi A V, Harima H, Hashimoto A, Yamamoto A, Haller E E 2002 Phys. Stat. Sol. (b) 234 787

    [10]

    Bhuiyan A G, Hashimoto A, Yamamoto A 2003 J. Appl. Phys. 94 2779

    [11]

    Kuokstis E, Sun W H, Shatalov M, Yang J W, Asif Khan M 2006 Appl. Phys. Lett. 88 261905

    [12]

    Bell A, Srinivasan S, Plumlee C, Omiya H, Ponce F A, Christen J, Tanaka S, Fujioka A, Nakagawa Y 2004 J. Appl. Phys. 95 4670

    [13]

    Zhang Z, Zhang R, Xie Z L, Liu B, Xiu X Q, Li Y, Fu D Y Lu H, Chen P, Han P, Zheng Y D, Tang C G, Chen Y H, Wang Z G 2009 Acta Phys. Sin. 58 3416 (in Chinese) [张曾, 张荣, 谢自力, 刘斌, 修向前, 李弋, 傅德颐, 陆海, 陈鹏, 韩平, 郑有炓, 汤晨光, 陈涌海, 王占国 2009 物理学报 58 3416]

    [14]

    Wu J, Walukiewicz W Shan W, Yu K M, Ager III J W, Li S X, Haller E E, Lu H, Schaff W J 2003 J. Appl. Phys. 94 4457

    [15]

    Wu P F 2007 M. S. Dissertation (Taibei: Chung Yuan Christian University) (in Chinese) [吴佩芳 2007 硕士学位论文 (台湾: 中原大学)]

    [16]

    Li Q, Xu S J, Xie M H, Tong S Y 2005 J. Phys.: Condens. Matter 17 4853

  • [1]

    Davydov V Yu, Klochikhin A A, Seisyan R P, Emtsev V V, Ivanov S V, Bechstedt F, Furthmller J, Harima H, Mudryi A V, Aderhold J, Semchinova O, Graul J 2002 Phys. Status Solidi (b) 229 R1

    [2]

    Wu J, Walukiewicz W, Yu K M, Ager III J W, Haller E E, Lu H, Schaff W J, Yoshiki Saito Yasushi Nanishi 2002 Appl. Phys. Lett. 80 3967

    [3]

    Foutz B E, OpLeary S K, Shur M S, Eastman L F 1999 J. Appl. Phys. 85 7727

    [4]

    Bockowski M 1999 Phys. B 265 1

    [5]

    Higashiwaki M, Matsui T 2002 Jpn. J. Appl. Phys. 41 L540

    [6]

    Wang X Q, Liu S T, Ma N, Feng L, Chen G, Xu F J, Tang N 2012 Appl. Phys. Express 5 015502

    [7]

    Miller N, Ager III J W, Smith III H M, Mayer M A, Yu K M, Haller E E, Walukiewicz W, Schaff W J, Gallinat C, Koblmller G, Speck J S 2010 J. Appl. Phys. 107 103712

    [8]

    Masataka Higashiwaki, Toshiaki Matsui 2004 Journal of Crystal Growth 269 162

    [9]

    Davydov V Yu, Klochikhin A A, Emtsev V V, Kurdyukov D A, Ivanov S V, Vekshin V A, Bechstedt F Furthmller J, Aderhold J, Graul J, Mudryi A V, Harima H, Hashimoto A, Yamamoto A, Haller E E 2002 Phys. Stat. Sol. (b) 234 787

    [10]

    Bhuiyan A G, Hashimoto A, Yamamoto A 2003 J. Appl. Phys. 94 2779

    [11]

    Kuokstis E, Sun W H, Shatalov M, Yang J W, Asif Khan M 2006 Appl. Phys. Lett. 88 261905

    [12]

    Bell A, Srinivasan S, Plumlee C, Omiya H, Ponce F A, Christen J, Tanaka S, Fujioka A, Nakagawa Y 2004 J. Appl. Phys. 95 4670

    [13]

    Zhang Z, Zhang R, Xie Z L, Liu B, Xiu X Q, Li Y, Fu D Y Lu H, Chen P, Han P, Zheng Y D, Tang C G, Chen Y H, Wang Z G 2009 Acta Phys. Sin. 58 3416 (in Chinese) [张曾, 张荣, 谢自力, 刘斌, 修向前, 李弋, 傅德颐, 陆海, 陈鹏, 韩平, 郑有炓, 汤晨光, 陈涌海, 王占国 2009 物理学报 58 3416]

    [14]

    Wu J, Walukiewicz W Shan W, Yu K M, Ager III J W, Li S X, Haller E E, Lu H, Schaff W J 2003 J. Appl. Phys. 94 4457

    [15]

    Wu P F 2007 M. S. Dissertation (Taibei: Chung Yuan Christian University) (in Chinese) [吴佩芳 2007 硕士学位论文 (台湾: 中原大学)]

    [16]

    Li Q, Xu S J, Xie M H, Tong S Y 2005 J. Phys.: Condens. Matter 17 4853

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  • Received Date:  29 August 2012
  • Accepted Date:  28 January 2013
  • Published Online:  05 June 2013

Study on the photoluminescence properties of InN films

  • 1. Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Fund Project:  Project supported by the National Basic Research of China (Grant Nos. 2011CB301900, 2012CB619304), the National Hi-tech development Program of China (Grant No. 2011AA03A103), the National Natural Science Foundation of China (Grant Nos. 60990311, 60820106003, 60906025, 60936004, 61176063), The Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2008019, BK2011010, BK2010385, BK2009255, BK2010178), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics.

Abstract: The photoluminescence (PL) properties of InN films grown by metal organic chemical vapor deposition (MOCVD) have been investigated. InN has a high level of background carrier concentration, which makes the Fermi level lie above the conduction band. By nonlinear fitting of the PL results, along with the energy band relations, we calculated the band gap of InN film to be 0.67 eV and the carrier concentration n=5.4×1018 cm-3. Thus we found a connection between PL results and the carrier concentration of InN films. In addition, we also studied the dependence of peak position and intensity of PL on temperature: the intensity of photoluminescence decreases as the temperature increases, and the peak position shows a red shift instead of an S-shape variation. Such a difference may be explained by a huge full width at half maximum of PL spectra. Also the concentration of carriers and the magnitude of the built-in electric field in the material may have influence on such a result.

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