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Effect of raster scan number on damage resistance of KDP crystal irradiated by ultraviolet pulse laser

Guo De-Cheng Jiang Xiao-Dong Huang Jin Xiang Xia Wang Feng-Rui Liu Hong-Jie Zhou Xin-Da Zu Xiao-Tao

Effect of raster scan number on damage resistance of KDP crystal irradiated by ultraviolet pulse laser

Guo De-Cheng, Jiang Xiao-Dong, Huang Jin, Xiang Xia, Wang Feng-Rui, Liu Hong-Jie, Zhou Xin-Da, Zu Xiao-Tao
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  • Received Date:  30 January 2013
  • Accepted Date:  07 April 2013
  • Published Online:  05 July 2013

Effect of raster scan number on damage resistance of KDP crystal irradiated by ultraviolet pulse laser

  • 1. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;
  • 2. Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900, China
Fund Project:  Project supported by the Science Foundation of China Academy of Engineering Physics (Grant No. 2011B0401065), the National Natural Science Foundation of China (Grant No. 61178018), and the Ph. D. Funding Support Program of Education Ministry of China (Grant No. 20110185110007).

Abstract: The raster scanning experiments for KDP crystal are carried out in R-on-1 mode at energy density below zero probability damage threshold to investigate the damage resistance capability as a function of pulse number after ultraviolet (UV) laser irradiation by using a tripled Nd:YAG laser. The1-on-1 damage measurements after laser irradiation indicate that the damage resistance of KDP is obviously enhanced and the increment is dependent on scanning number. The optical absorption and photoluminescence spectra show that the evolution of oxygen-vacancy centers in KDP crystal is important to the damage resistance capability. The Raman and infrared spectra show that the polarization distortions of PO4, P–OH and P=O groups induced by UV laser irradiation also contribute to the changes of damage resistance.

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