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Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor

Zhang Yue Zhuo Qing-Qing Liu Hong-Xia Ma Xiao-Hua Hao Yue

Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor

Zhang Yue, Zhuo Qing-Qing, Liu Hong-Xia, Ma Xiao-Hua, Hao Yue
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  • Received Date:  25 March 2013
  • Accepted Date:  11 April 2013
  • Published Online:  20 August 2013

Flat-roof of dynamic equilibrium phenomenon in static negative biase temperature instability effect on power metal-oxide-semiconductor field-effect transistor

  • 1. School of Microelectronics, Xidian University, Xi’an 710071, China;
  • 2. School of Technical Physics, Xidian University, Xi’an 710071, China;
  • 3. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education, Xi’an 710071, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant No. 2011CBA00606), the National Natural Science Foundation of China (Grant No. 61106106), and the Fundamental Research Fund for the Central Universities, China (Grant No. K50511250008).

Abstract: The effect of static negative bias temperature instability stress on p-channel power metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated by experiment and simulation. The time evolution of the negative bias temperature instability degradation presents the trend which follows the reaction-diffusion (R-D) theory on the exaggerated time scale. A flat-roof section is observed under the varying stress condition, which can be considered as the dynamic equilibrium phase through the simulation verification based on the R-D model. The analysis of the simulated results also provides the explanation for the difference in the time duration of the dynamic equilibrium phase under the condition of varying stress voltage.

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