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Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

Pan Shu-Wan Chen Song-Yan Zhou Bi Huang Wei Li Cheng Lai Hong-Kai Wang Jia-Xian

Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

Pan Shu-Wan, Chen Song-Yan, Zhou Bi, Huang Wei, Li Cheng, Lai Hong-Kai, Wang Jia-Xian
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  • Received Date:  19 April 2013
  • Accepted Date:  28 May 2013
  • Published Online:  05 September 2013

Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing

  • 1. College of Engineering, Huaqiao University, Quanzhou 362021, China;
  • 2. Department of Physics, Semiconductor photonics research center, Xiamen University, Xiamen 361005, China;
  • 3. Department of Physics and Electronic Information Engineering, Minjiang University, Fuzhou 350108, China
Fund Project:  Project supported by the Startup Package Funding of Huaqiao University (Grant No. 12BS226), the Natural Science Foundation of Fujian Province, China (Grant Nos: 2012J01277, 2012J01284), the National Basic Research Program of China (Grant No. 2012CB933503), the National Natural Science Foundation of China (Grant Nos. 61036003, 61176050, 61176092, 60837001), and the Foundation of Fujian Provincial Education Department of China (Grant No. JA12270).

Abstract: We have investigated the structure and photoluminescence (PL) properties of Se nanocrystals (NCs) obtained by rapid thermal annealing of a-Se films on Si substrate. The size of Se NCs in a trigonal phase increases linearly with increasing temperature. Moreover, three PL peaks located at 1.4, 1.7 and 1.83 eV are observed, which are attributed to the emission of defects in amorphous Se, donor-acceprter pair (DAP) recombination at the interface of amorphous Se and Se NCs, and interband transition of Se crystals, respectively.

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