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Investigation on mobility of single-layer MoS2 at low temperature

Dong Hai-Ming

Investigation on mobility of single-layer MoS2 at low temperature

Dong Hai-Ming
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  • PDF Downloads:  935
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Publishing process
  • Received Date:  26 June 2013
  • Accepted Date:  10 July 2013
  • Published Online:  05 October 2013

Investigation on mobility of single-layer MoS2 at low temperature

  • 1. Department of Physics, China University of Mining and Technology, Xuzhou 221116, China
Fund Project:  Project supported by the Fundamental Research Fund for the Central Universities, China (Grant No. 2013QNA29).

Abstract: The two-dimensional, single-layer MoS2 with a direct band-gap of 1.8 eV, which makes it very suitable for nanoelectronic applications, such as field-effect transistors, has aroused great interest because of its distinctive electronic, optical, and catalytic properties. In this paper, we present a detailed theoretical study of the electronic transport property of single-layer MoS2 on the basis of the usual momentum-balance equation. We obtain the analytical electric mobility at low temperature. It shows that the electric mobility of MoS2 is linear with respect to substrate dielectric constant squared and the rate between the electron density and charged impurity density at low temperature. It is found that by using relatively high dielectric constant materials as substrates, reducing impurity densities and increasing carrier densities high mobilities in MoS2-substrate wafer systems can be achieved.

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