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SiBN ceramics, a stealth material at high temperature

Lu Ai-Jiang

SiBN ceramics, a stealth material at high temperature

Lu Ai-Jiang
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  • Silicon boron nitride (SiBN) has been paid attention extensively due to its high melting point and anti-oxidation, which is also the reason that one of the research focus is its physical property of this material at high temperatures. It has been reported that amorphous SiBN ceramics could be modeled based on the the atomic structure of -Si3N4. In this paper, the molecular dynamics and DFT calculation were employed to explore the structural model of SiBN, to reveal the electronic and optical properties of SiBN at high temperatures. It is worth noting that, different from -Si3N4, the absorption of SiBN at visible light and higher frequency decreases at higher temperatures, and the reflectance decreases to 1% or so. Such results could not be found in single crystalline Si3N4. These indicate the possibility of SiBN used as the stealth coating. It also could be a good candidate in the optoelectronic application of amorphous materials in the near future.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant No. 11204030).
    [1]

    Schon J C, Hannemann A, Sethi G, Pentin I V, Jansen M 2011 Process. Appl. Ceramics. 5 49

    [2]

    Hannemann A, Schon J C, Jansen M 2004 Phys. Rev. B 70 144201

    [3]

    Hannemann A, Schon J C, Jansen M, Sibani P 2005 J. Phys. Chem. B 109 11770

    [4]

    Tang Y, Wang J, Li X, Xie Z, Wang H, Li W, Wang X 2010 Chem. Eur. J 16 6458

    [5]

    Jansen M, Schon J C, van Wullen L 2006 Angew. Chem. Int. Ed. 45 4244

    [6]

    Hannemann A, Schon J C, Oligschleger C, Jansen M 1999 Proceedings of DGK-workshop on ‘Struktur und Eigenschaften Nichtkristalliner Materialien’, Wolfersdorf, September, 1999

    [7]

    Schon J C, Hannemann A, Sethi G, Jansen M, Salamon P, Frost R, Kjeldgaard L 2002 Proc. XXIII Workshop on Structure and Kinetics of Nucleation and Crystallization in Non-crystalline Materials Jena, September 2002

    [8]

    Wang W Q, Yuan Z, Xu S F, Wang Y S, Zhang L G 2008 Acta Phys. Sin. 57 6540 (in Chinese) [王文全, 袁洲, 徐世峰, 王岩松, 张立功 2008 物理学报 57 6540]

    [9]

    Hannemann A, Schon J C, Jansen M 2005 J. Mater. Chem. 15 1167

    [10]

    Schmidt H J 1988 J. Non-Cryst. Solids 100 51

    [11]

    Flory P J 1941 J. Am. Chem. Soc. 63 3083

    [12]

    Liao N, Xue W, Zhang M 2012 Modelling Simul. Mater. Sci. Eng. 20 035009

    [13]

    Kroll P, Hoffmann R 1998 Angew. Chem. Int. Ed. 37 2527

    [14]

    Verlet L 1967 Phys. Rev. 159 98

    [15]

    Sanchez-Portal D, Ordejon P, Artacho E, Soler J M 1997 Int. J. Quantum. Chem. 65 453

    [16]

    Sanchez-Portal D, Ordejon P, Canadell E 2004 Structure and Bonding 113 103

    [17]

    Hestenes M R, Stiefel E 1952 J. Res. Nat. Bure. Stand 49 6

    [18]

    Ordejon P, Drabold D A, Grumbach M P, Martin R M 1993 Phys. Rev. B 48 14646

    [19]

    Zhang F C, Zhang Z Y, Zhang W H, Yan J F, Yong J N 2009 Chin. Phys. B 18 2508

    [20]

    Yun J N, Zhang Z Y 2009 Chin. Phys. B 18 2945

    [21]

    Yang Z J, Guo Y D, Li J, Liu J C, Dai W, Cheng X L, Yang X D 2010 Chin. Phys. B 19 077102

  • [1]

    Schon J C, Hannemann A, Sethi G, Pentin I V, Jansen M 2011 Process. Appl. Ceramics. 5 49

    [2]

    Hannemann A, Schon J C, Jansen M 2004 Phys. Rev. B 70 144201

    [3]

    Hannemann A, Schon J C, Jansen M, Sibani P 2005 J. Phys. Chem. B 109 11770

    [4]

    Tang Y, Wang J, Li X, Xie Z, Wang H, Li W, Wang X 2010 Chem. Eur. J 16 6458

    [5]

    Jansen M, Schon J C, van Wullen L 2006 Angew. Chem. Int. Ed. 45 4244

    [6]

    Hannemann A, Schon J C, Oligschleger C, Jansen M 1999 Proceedings of DGK-workshop on ‘Struktur und Eigenschaften Nichtkristalliner Materialien’, Wolfersdorf, September, 1999

    [7]

    Schon J C, Hannemann A, Sethi G, Jansen M, Salamon P, Frost R, Kjeldgaard L 2002 Proc. XXIII Workshop on Structure and Kinetics of Nucleation and Crystallization in Non-crystalline Materials Jena, September 2002

    [8]

    Wang W Q, Yuan Z, Xu S F, Wang Y S, Zhang L G 2008 Acta Phys. Sin. 57 6540 (in Chinese) [王文全, 袁洲, 徐世峰, 王岩松, 张立功 2008 物理学报 57 6540]

    [9]

    Hannemann A, Schon J C, Jansen M 2005 J. Mater. Chem. 15 1167

    [10]

    Schmidt H J 1988 J. Non-Cryst. Solids 100 51

    [11]

    Flory P J 1941 J. Am. Chem. Soc. 63 3083

    [12]

    Liao N, Xue W, Zhang M 2012 Modelling Simul. Mater. Sci. Eng. 20 035009

    [13]

    Kroll P, Hoffmann R 1998 Angew. Chem. Int. Ed. 37 2527

    [14]

    Verlet L 1967 Phys. Rev. 159 98

    [15]

    Sanchez-Portal D, Ordejon P, Artacho E, Soler J M 1997 Int. J. Quantum. Chem. 65 453

    [16]

    Sanchez-Portal D, Ordejon P, Canadell E 2004 Structure and Bonding 113 103

    [17]

    Hestenes M R, Stiefel E 1952 J. Res. Nat. Bure. Stand 49 6

    [18]

    Ordejon P, Drabold D A, Grumbach M P, Martin R M 1993 Phys. Rev. B 48 14646

    [19]

    Zhang F C, Zhang Z Y, Zhang W H, Yan J F, Yong J N 2009 Chin. Phys. B 18 2508

    [20]

    Yun J N, Zhang Z Y 2009 Chin. Phys. B 18 2945

    [21]

    Yang Z J, Guo Y D, Li J, Liu J C, Dai W, Cheng X L, Yang X D 2010 Chin. Phys. B 19 077102

  • Citation:
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Publishing process
  • Received Date:  17 May 2013
  • Accepted Date:  12 August 2013
  • Published Online:  05 November 2013

SiBN ceramics, a stealth material at high temperature

  • 1. Physics department of Science College, Donghua University, Shanghai 201620, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 11204030).

Abstract: Silicon boron nitride (SiBN) has been paid attention extensively due to its high melting point and anti-oxidation, which is also the reason that one of the research focus is its physical property of this material at high temperatures. It has been reported that amorphous SiBN ceramics could be modeled based on the the atomic structure of -Si3N4. In this paper, the molecular dynamics and DFT calculation were employed to explore the structural model of SiBN, to reveal the electronic and optical properties of SiBN at high temperatures. It is worth noting that, different from -Si3N4, the absorption of SiBN at visible light and higher frequency decreases at higher temperatures, and the reflectance decreases to 1% or so. Such results could not be found in single crystalline Si3N4. These indicate the possibility of SiBN used as the stealth coating. It also could be a good candidate in the optoelectronic application of amorphous materials in the near future.

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