Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Effect of a-Si:H interface buffer layer on the performance of hydrogenated amorphous silicon germanium thin film solar cell

Liu Bo-Fei Bai Li-Sha Zhang De-Kun Wei Chang-Chun Sun Jian Hou Guo-Fu Zhao Ying Zhang Xiao-Dan

Effect of a-Si:H interface buffer layer on the performance of hydrogenated amorphous silicon germanium thin film solar cell

Liu Bo-Fei, Bai Li-Sha, Zhang De-Kun, Wei Chang-Chun, Sun Jian, Hou Guo-Fu, Zhao Ying, Zhang Xiao-Dan
PDF
Get Citation
  • In the light of the open circuit voltage and fill factor reduction resulting from band gap discontinuities and high defect densities at interfaces when more germanium is mixed into the intrinsic layer of hydrogenated amorphous silicon germanium solar cell, the insertion of a-Si:H buffer layer with proper band gap into PI interface not only mitigates band gap discontinuities and interface recombination, but also improves the electric field distribution by reducing the defect densities at PI interface, thus the collection efficiency of a-SiGe:H solar cell is enhanced. By inserting a-Si:H buffer layer into IN interface and designing band gap profile along the a-SiGe:H intrinsic layer further, the 8.72% conversion efficiency of single junction a-SiGe:H solar cell is achieved when only Al back reflector is added as back contact.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00706, 2011CBA00707), the National High Technology Research and Development Program of China (Grant No. 2013AA050302), the Science and Technology Program of Tianjin, China (Grant No. 12ZCZDGX03600), the Major Science and Technology Project of Tianjin, China (Grant No. 11TXSYGX22100), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120031110039).
    [1]

    Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198

    [2]

    Yang J, Yan B, Guha S 2005 Thin Solid Films 487 162

    [3]

    Deng X, Liao X, Han S, Povolny H, Agarwal P 2000 Solar Energy Materials and Solar Cells 62 89

    [4]

    Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512

    [5]

    Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 物理学报 60 068801]

    [6]

    Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801

    [7]

    Lundszien D, Finger F, Wagner H 2002 Solar Energy Materials and Solar Cells 74 365

    [8]

    Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611

    [9]

    Crandall R S 1983 J. Appl. Phys. 54 7176

    [10]

    Okamoto H, Kida H, Nonomura S, Fukumoto K, Hamakawa Y 1983 J. Appl. Phys. 54 3236

    [11]

    Hegedus S S 1997 Prog. Photovolt.: Res. Appl. 5 151

    [12]

    Deng X 2005 Photovoltaic Specialists Conference, Conference Record of the Thirty-first IEEE Lake Buena Vista, USA, January 3–7, 2005 1365

    [13]

    Arya R R, Bennett M S, Rajan K, Catalano A 1989 Appl. Phys. Lett. 55 1894

    [14]

    Jimenez Z R, Rubinelli F A, Rath J K, Schropp R E I 2002 J. Non-Cryst. Solids 299 1131

    [15]

    Hegedus S S, Salzman N, Fagen E 1988 J. Appl. Phys. 63 5126

    [16]

    Merten J, Voz C, Munoz A, Asensi J M Andreu J 1999 Solar Energy Materials and Solar Cells 57 153

  • [1]

    Mackenzie K D, Eggert J R, Leopold D J, Li Y M, Lin S, Paul W 1985 Phys. Rev. B 31 2198

    [2]

    Yang J, Yan B, Guha S 2005 Thin Solid Films 487 162

    [3]

    Deng X, Liao X, Han S, Povolny H, Agarwal P 2000 Solar Energy Materials and Solar Cells 62 89

    [4]

    Yan B, Yue G, Sivec L, Yang J, Guha S, Jiang C 2011 Appl. Phys. Lett. 99 113512

    [5]

    Zheng X X, Zhang X D, Yang S S, Wang G H, Xu S Z, Wei C C, Sun J, Geng X H, Xiong S Z, Zhao Y 2011 Acta Phys. Sin. 60 068801 (in Chinese) [郑新霞, 张晓丹, 杨素素, 王光红, 许盛之, 魏长春, 孙建, 耿新华, 熊绍珍, 赵颖 2011 物理学报 60 068801]

    [6]

    Zhang X D, Zheng X X, Xu S Z, Lin Q, Wei C C, Sun J, Geng X H, Zhao Y 2011 Chin. Phys. B 20 108801

    [7]

    Lundszien D, Finger F, Wagner H 2002 Solar Energy Materials and Solar Cells 74 365

    [8]

    Zimmer J, Stiebig H, Wagner H 1998 J. Appl. Phys. 84 611

    [9]

    Crandall R S 1983 J. Appl. Phys. 54 7176

    [10]

    Okamoto H, Kida H, Nonomura S, Fukumoto K, Hamakawa Y 1983 J. Appl. Phys. 54 3236

    [11]

    Hegedus S S 1997 Prog. Photovolt.: Res. Appl. 5 151

    [12]

    Deng X 2005 Photovoltaic Specialists Conference, Conference Record of the Thirty-first IEEE Lake Buena Vista, USA, January 3–7, 2005 1365

    [13]

    Arya R R, Bennett M S, Rajan K, Catalano A 1989 Appl. Phys. Lett. 55 1894

    [14]

    Jimenez Z R, Rubinelli F A, Rath J K, Schropp R E I 2002 J. Non-Cryst. Solids 299 1131

    [15]

    Hegedus S S, Salzman N, Fagen E 1988 J. Appl. Phys. 63 5126

    [16]

    Merten J, Voz C, Munoz A, Asensi J M Andreu J 1999 Solar Energy Materials and Solar Cells 57 153

  • [1] Zhao Jian-Ning, Liu Dong-Huan, Wei Dong, Shang Xin-Chun. Thermal rectification mechanism of one-dimensional composite structure with interface thermal contact resistance. Acta Physica Sinica, 2020, 69(5): 056501. doi: 10.7498/aps.69.20191409
    [2] Bai Jia-Hao, Guo Jian-Gang. Theoretical studies on bidirectional interfacial shear stress transfer of graphene/flexible substrate composite structure. Acta Physica Sinica, 2020, 69(5): 056201. doi: 10.7498/aps.69.20191730
    [3] Liu Ying-Guang, Bian Yong-Qing, Han Zhong-He. Heat transport behavior of bicrystal ZnO containing tilt grain boundary. Acta Physica Sinica, 2020, 69(3): 033101. doi: 10.7498/aps.69.20190627
    [4] Investigate the effect of source-drain conduction in single-event transient on nanoscale bulk fin field effect transistor. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191896
    [5] Effect of Swift Heavy Ions Irradiation on the Microstructure and Current-Carrying Capability in YBa2Cu3O7-δ High Temperature Superconductor Films. Acta Physica Sinica, 2020, (): . doi: 10.7498/aps.69.20191914
  • Citation:
Metrics
  • Abstract views:  454
  • PDF Downloads:  426
  • Cited By: 0
Publishing process
  • Received Date:  30 July 2013
  • Accepted Date:  31 August 2013
  • Published Online:  20 December 2013

Effect of a-Si:H interface buffer layer on the performance of hydrogenated amorphous silicon germanium thin film solar cell

  • 1. Key Laboratory of Photo-Electronic Thin Film Devices and Technology, Key Laboratory of Optoelectronic Information Technology of Ministry of Education, Institute of Photo Electronics Thin Film Devices and Technology of Nankai University, Tianjin 300071, China
Fund Project:  Project supported by the National Basic Research Program of China (Grant Nos. 2011CBA00706, 2011CBA00707), the National High Technology Research and Development Program of China (Grant No. 2013AA050302), the Science and Technology Program of Tianjin, China (Grant No. 12ZCZDGX03600), the Major Science and Technology Project of Tianjin, China (Grant No. 11TXSYGX22100), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120031110039).

Abstract: In the light of the open circuit voltage and fill factor reduction resulting from band gap discontinuities and high defect densities at interfaces when more germanium is mixed into the intrinsic layer of hydrogenated amorphous silicon germanium solar cell, the insertion of a-Si:H buffer layer with proper band gap into PI interface not only mitigates band gap discontinuities and interface recombination, but also improves the electric field distribution by reducing the defect densities at PI interface, thus the collection efficiency of a-SiGe:H solar cell is enhanced. By inserting a-Si:H buffer layer into IN interface and designing band gap profile along the a-SiGe:H intrinsic layer further, the 8.72% conversion efficiency of single junction a-SiGe:H solar cell is achieved when only Al back reflector is added as back contact.

Reference (16)

Catalog

    /

    返回文章
    返回