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One-dimensional photonic crystal(1D PC)-based back reflectors for amorphous silicon thin film solar cell

Chen Pei-Zhuan Hou Guo-Fu Suo Song Ni Jian Zhang Jian-Jun Zhang Xiao-Dan Zhao Ying

One-dimensional photonic crystal(1D PC)-based back reflectors for amorphous silicon thin film solar cell

Chen Pei-Zhuan, Hou Guo-Fu, Suo Song, Ni Jian, Zhang Jian-Jun, Zhang Xiao-Dan, Zhao Ying
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Publishing process
  • Received Date:  10 December 2013
  • Accepted Date:  27 December 2013
  • Published Online:  05 April 2014

One-dimensional photonic crystal(1D PC)-based back reflectors for amorphous silicon thin film solar cell

  • 1. Institute of Photo-electronic Thin Film Devices and Technique, Key Laboratory of Photo-electronic Thin Film Devices and Technique of Tianjin, Key Laboratory of Photo-electronic Information Science and Technology of Ministry of Education, Nankai University, Tianjin 300071, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant Nos. 61176060, 61377031), the Natural Science Foundation of Tianjin, China (Grant No. 12JCZDJC28300), the National High Technology Research and Development Program of China (Grant No. 2011AA050503), the State Key Development Program for Basic Research of China (Grant Nos. 2011CBA00705, 2011CBA00706, 2011CBA007070), and the Key Projects in the National Science & Technology Pillar Program of Tianjin, China (11TXSYGX22100).

Abstract: New-type back reflectors based on one-dimensional photonic crystal (1D PC) for amorphous silicon thin film solar cells have been investigated, designed and fabricated. These 1D PCs consist of alternating amorphous Si (a-Si) and silicon dioxide (SiOx), of which the deposition process is compatible with current silicon thin film solar cells technology. Results indicate that the total reflectance of 1D PCs increases with the increase of period number. An average reflectance over 96% can be achieved in the range from 500 to 750 nm with 4 periods or more. Applying the 4-period 1D PC as back reflector in NIP amorphous silicon thin film solar cell with device-configuration of glass/1D PC/AZO/NIP a-Si:H/ITO, a conversion efficiency of 7.9% can be obtained, which is comparable to the AZO/Ag-based solar cell of 7.7% and is much better than the SS-based solar cell of 6.9% (a relative enhancement of 14.5%).

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