Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Study on resonance frequency of doping silicon nano-beam by theoretical model and molecular dynamics simulation

Ma Xia Wang Jing

Study on resonance frequency of doping silicon nano-beam by theoretical model and molecular dynamics simulation

Ma Xia, Wang Jing
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  678
  • PDF Downloads:  131
  • Cited By: 0
Publishing process
  • Received Date:  23 December 2016
  • Accepted Date:  28 February 2017
  • Published Online:  05 May 2017

Study on resonance frequency of doping silicon nano-beam by theoretical model and molecular dynamics simulation

    Corresponding author: Wang Jing, wjxju@163.com
  • 1. College of Physical Science and Technology, Xinjiang University, Urumqi 830046, China
Fund Project:  Project supported by the National Natural Science Foundation of China (Grant No. 11064014).

Abstract: With the rapid development of nanoelectromechanical system technologies, silicon nanostructures have attracted considerable attention for the remarkable mechanical properties. A number of studies have been made on the mechanical properties through theoretical analysis, atomistic or molecular dynamics and experiments. In this paper, the resonance frequency of the doping silicon nano-beam is investigated by a theoretical model based the semi-continuum approach to achieve the goal of accurately capturing the atomistic physics and retaining the efficiency of continuum model. The temperature dependence of the resonance frequency of the nanostructure is important for application design, which is considered by the Keating anharmonic model used to describe the strain energy at finite temperature. The resonance frequencies are also simulated by the molecular dynamics at different temperatures. The studies indicate that the resonance frequency of the P doped silicon nano-beam is influenced by the size, the doping concentration and the temperature. The results show that the resonant frequency decreases with the increase of the length of the beam, and increases with the increase of the doping concentration of the silicon nano-beam. The resonant frequency of silicon nano-beam decreases with the increase of temperature, but the changes of the resonant frequency is not obvious. The doping concentration has a little effect on the resonance frequency of the silicon nano-beam. The conclusion can be drawn that neither the effect of doping concentration nor the effect of temperature on resonant frequency of the silicon nano-beam is obvious, the size is a major factor influencing the resonance frequency of the silicon nano-beam.

Reference (25)

Catalog

    /

    返回文章
    返回