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XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE

XU ZHUO CHEN GUANG-DE YUAN JIN-SHE QI MING LI AI-ZHEN

XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE

XU ZHUO, CHEN GUANG-DE, YUAN JIN-SHE, QI MING, LI AI-ZHEN
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  • Received Date:  25 February 2001
  • Accepted Date:  05 May 2001
  • Published Online:  20 December 2001

XPS AND AES INVESTIGATION OF GaN FILMS GROWN BY MBE

  • 1. (1)西安交通大学电子材料研究所,西安710049; (2)西安交通大学应用物理系,西安710049; (3)西安交通大学应用物理系,西安710049,西安理工大学应用物理系,西安710048; (4)中国科学院上海冶金研究所,上海200050

Abstract: The surface composition of GaN grown by plasma-assisted MBE was investigated using X-ray photoelectron spectroscopy and Auger election emission spectroscopy(AES), while the depth profile was analyzed by AES with Ar iron sputtering. The experimental results indicated that unintentional doped semi-in salating films formed by plasma-assisted MBE had a rich-gallium surface. It was found that the impurity carbon was chiefly adsorbed onto the surface while oxygen diffused into the bulk to distribute in a certain depth. Consequently, the oxygen-related impurity band and an acceptor level could be simultaneously formed in the layer. This influenced the optical and electrical properties of the films.

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