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Acta Physica Sinica. 2002, 51(2): 367-371.

doi: 10.7498/aps.51.367.

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(1)香港科技大学物理系,香港九龙清水湾; (2)中国科学院半导体研究所半导体材料科学开放实验室,北京100083; (3)中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083; (4)中国科学院半导体研究所光电子工程中心,北京100083

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Vol. 51, Issue 2 - 2002-01-20

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快速热处理对应变InGaAs/GaAs单量子阱激光二极管电子发射和DX中心的影响

1. (1)香港科技大学物理系,香港九龙清水湾; (2)中国科学院半导体研究所半导体材料科学开放实验室,北京100083; (3)中国科学院半导体研究所半导体超晶格国家重点实验室,北京100083; (4)中国科学院半导体研究所光电子工程中心,北京100083

Received Date: 2001-05-19
Accepted Date: 2001-08-28
Available Online: 2005-05-10

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