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西安电子科技大学微电子所,西安710071
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[1] Guo Jian-Fei, Li Hao, Wang Zi-Ming, Zhong Ming-Hao, Chang Shuai-Jun, Ou Shu-Ji, Ma Hai-Lun, Liu Li. Failure mechanism of double-trench (DT) 4H-SiC power MOSFET under unclamped inductive switch test. Acta Physica Sinica, 2022, 71(13): 137302. doi: 10.7498/aps.71.20220095 [2] Chang Shuai-Jun, Ma Hai-Lun, Li Hao, Ou Shu-Ji, Guo Jian-Fei, Zhong Ming-Hao, Liu Li. A novel 4H-SiC ESD protection device with improved robustness. Acta Physica Sinica, 2022, 71(19): 198501. doi: 10.7498/aps.71.20220879 [3] Li Chuan-Gang, Ju Tao, Zhang Li-Guo, Li Yang, Zhang Xuan, Qin Juan, Zhang Bao-Shun, Zhang Ze-Hong. Growth of 4H-SiC recombination-enhancing buffer layer with Ti and N co-doping and improvement of forward voltage stability of PiN diodes. Acta Physica Sinica, 2021, 70(3): 037102. doi: 10.7498/aps.70.20200921 [4] Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei. -ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301. doi: 10.7498/aps.65.207301 [5] Jia Ren-Xu, Liu Si-Cheng, Xu Han-Di, Chen Zheng-Tao, Tang Xiao-Yan, Yang Fei, Niu Ying-Xi. Study on Grove model of the 4H-SiC homoepitaxial growth. Acta Physica Sinica, 2014, 63(3): 037102. doi: 10.7498/aps.63.037102 [6] Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan. Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFET. Acta Physica Sinica, 2013, 62(15): 157201. doi: 10.7498/aps.62.157201 [7] Han Ming-Jun, Ke Dao-Ming, Chi Xiao-Li, Wang Min, Wang Bao-Tong. A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET. Acta Physica Sinica, 2013, 62(9): 098502. doi: 10.7498/aps.62.098502 [8] Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET. Acta Physica Sinica, 2012, 61(21): 217304. doi: 10.7498/aps.61.217304 [9] Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica, 2011, 60(11): 116103. doi: 10.7498/aps.60.116103 [10] Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica, 2011, 60(1): 017103. doi: 10.7498/aps.60.017103 [11] Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men. Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica, 2011, 60(3): 037808. doi: 10.7498/aps.60.037808 [12] Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu. Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica, 2008, 57(10): 6649-6653. doi: 10.7498/aps.57.6649 [13] Chen Wei-Bing, Xu Jing-Ping, Zou Xiao, Li Yan-Ping, Xu Sheng-Guo, Hu Zhi-Fu. Analytic tunneling-current model of small-scale MOSFETs. Acta Physica Sinica, 2006, 55(10): 5036-5040. doi: 10.7498/aps.55.5036 [14] Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica, 2005, 54(5): 2118-2122. doi: 10.7498/aps.54.2118 [15] Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica, 2005, 54(6): 2918-2923. doi: 10.7498/aps.54.2918 [16] Lin Hong-Feng, Xie Er-Qing, Ma Zi-Wei, Zhang Jun, Peng Ai-Hua, He De-Yan. Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method. Acta Physica Sinica, 2004, 53(8): 2780-2785. doi: 10.7498/aps.53.2780 [17] Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica, 2003, 52(10): 2541-2546. doi: 10.7498/aps.52.2541 [18] Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica, 2003, 52(10): 2553-2557. doi: 10.7498/aps.52.2553 [19] Zhang Hong-Tao, Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin. . Acta Physica Sinica, 2002, 51(2): 304-309. doi: 10.7498/aps.51.304 [20] Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming. . Acta Physica Sinica, 2002, 51(1): 148-152. doi: 10.7498/aps.51.148
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- Abstract views: 10185
- PDF Downloads: 2187
- Cited By: 0
Publishing process
- Received Date:
27 July 2001
- Accepted Date:
12 September 2001
- Published Online:
30 May 2005
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