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Xu Jing-Ping, Li Chun-Xia, Wu Hai-Ping. Analyses on high-temperature electrical properties of 4H-SiC n-MOSFET. Acta Physica Sinica,
2005, 54(6): 2918-2923.
doi: 10.7498/aps.54.2918
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Wang Yuan, Zhang Yi-Men, Zhang Yu-Ming, Tang Xiao-Yan. A simulation study of 6H-SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2003, 52(10): 2553-2557.
doi: 10.7498/aps.52.2553
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Jia Ren-Xu, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu. Nitrogen doped 4H-SiC homoepitaxial layers grown by CVD. Acta Physica Sinica,
2008, 57(10): 6649-6653.
doi: 10.7498/aps.57.6649
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Miao Rui-Xia, Zhang Yu-Ming, Tang Xiao-Yan, Zhang Yi-Men. Investigation of luminescence properties of basal plane dislocations in 4H-SiC. Acta Physica Sinica,
2011, 60(3): 037808.
doi: 10.7498/aps.60.037808
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Cheng Ping, Zhang Yu-Ming, Zhang Yi-Men. Effect of annealing treatment on the 386 nm and 388 nm emission peaks in unintentionally doped 4H-SiC epilayer. Acta Physica Sinica,
2011, 60(1): 017103.
doi: 10.7498/aps.60.017103
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei. -ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica,
2016, 65(20): 207301.
doi: 10.7498/aps.65.207301
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Chen Wei-Bing, Xu Jing-Ping, Zou Xiao, Li Yan-Ping, Xu Sheng-Guo, Hu Zhi-Fu. Analytic tunneling-current model of small-scale MOSFETs. Acta Physica Sinica,
2006, 55(10): 5036-5040.
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Liu Zhang-Li, Hu Zhi-Yuan, Zhang Zheng-Xuan, Shao Hua, Ning Bing-Xu, Bi Da-Wei, Chen Ming, Zou Shi-Chang. Total ionizing dose effect of 0.18 m nMOSFETs. Acta Physica Sinica,
2011, 60(11): 116103.
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Han Ming-Jun, Ke Dao-Ming, Chi Xiao-Li, Wang Min, Wang Bao-Tong. A 2D semi-analytical model for the potential distribution of ultra-short channel MOSFET. Acta Physica Sinica,
2013, 62(9): 098502.
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Bao Jun-Lin, Zhuang Yi-Qi, Du Lei, Li Wei-Hua, Wan Chang-Xing, Zhang Ping. A unified model for 1/f noise in n-channel and p-channel MOSFETs. Acta Physica Sinica,
2005, 54(5): 2118-2122.
doi: 10.7498/aps.54.2118
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Huang Yuan, Xu Jing-Ping, Wang Li-Sheng, Zhu Shu-Yan. Effects of different scattering mechanisms on inversion-channel electron mobility in Al2O3/InxGa1-xAs nMOSFET. Acta Physica Sinica,
2013, 62(15): 157201.
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Xu Chong-Yang, Zhou Xue-Cheng, Wang Chang-An, Zhao Bo-Fang, Zhou Xue-Mei, Zeng Xiang-Bin, Zhang Hong-Tao. . Acta Physica Sinica,
2002, 51(2): 304-309.
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Yang Lin-An, Zhang Yi-Men, Gong Ren-Xi, Zhang Yu-Ming. . Acta Physica Sinica,
2002, 51(1): 148-152.
doi: 10.7498/aps.51.148
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming. The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica,
2003, 52(10): 2541-2546.
doi: 10.7498/aps.52.2541
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Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET. Acta Physica Sinica,
2012, 61(21): 217304.
doi: 10.7498/aps.61.217304
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Jia Ren-Xu, Liu Si-Cheng, Xu Han-Di, Chen Zheng-Tao, Tang Xiao-Yan, Yang Fei, Niu Ying-Xi. Study on Grove model of the 4H-SiC homoepitaxial growth. Acta Physica Sinica,
2014, 63(3): 037102.
doi: 10.7498/aps.63.037102
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Lin Hong-Feng, Xie Er-Qing, Ma Zi-Wei, Zhang Jun, Peng Ai-Hua, He De-Yan. Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method. Acta Physica Sinica,
2004, 53(8): 2780-2785.
doi: 10.7498/aps.53.2780
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming. The threshold voltage of SiC Schottky barrier source/drain MOSFET. Acta Physica Sinica,
2009, 58(1): 494-497.
doi: 10.7498/aps.58.494
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Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia. Study of the effect of interface state charges on field-effect mobility of n-channel 6H-SiC MOSFET. Acta Physica Sinica,
2003, 52(4): 830-833.
doi: 10.7498/aps.52.830
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Che Yong, Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming, Wang Yue-Hu, Chen Liang. The extraction method for trap parameters in 4H-SiC MESFETs. Acta Physica Sinica,
2008, 57(5): 2871-2874.
doi: 10.7498/aps.57.2871
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