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Large magnetoresistance in Cox-C1-x granular films on Si(1 00) substrate prepared by pulsed laser deposition

Zhu Dan-Dan Zhang Xiao-Zhong Xue Qing-Zhong

Large magnetoresistance in Cox-C1-x granular films on Si(1 00) substrate prepared by pulsed laser deposition

Zhu Dan-Dan, Zhang Xiao-Zhong, Xue Qing-Zhong
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  • Received Date:  07 April 2003
  • Accepted Date:  30 May 2003
  • Published Online:  20 December 2003

Large magnetoresistance in Cox-C1-x granular films on Si(1 00) substrate prepared by pulsed laser deposition

  • 1. 清华大学材料科学与工程系,北京 100084

Abstract: A large positive magnetoresistance (MR) has been observed in Cox-C1-x gr anular films prepared on Si(100) substrates by pulsed laser deposition (PLD). Co 0.02-C0.98 sample has the largest room-temperature MR of 2 2% at the magnetic field B=1T. It is noted that in the Cox-C1-x/Si s tructure, the MR at room-temperature is much larger than that at low temperatures. The room-te mperature positive MR of the Cox-C1-x films has a B2/ 3 dependence when B<1T and a B1/2 dependence when B>1T. Such magnetotransport pr opert ies have never been reported before. It appears that some new mechanisms play im portant roles in the magnetotransport of the Cox-C1-x film s. Further stu dy on the MR mechanism of the Cox-C1-x/Si structure will n ot only shed l ight on the study of spin electronics and magnetism, but also make possible the application of the Cox-C1-x/Si in information industry.

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