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Blue photoluminescence of aSiOxNy films prepared by ECR-CVD

Xu Sheng-Hua Xin Yu Ning Zhao-Yuan Cheng Shan-Hua Huang Song Lu Xin-Hua Xiang Su-Liu Chen Jun

Blue photoluminescence of aSiOxNy films prepared by ECR-CVD

Xu Sheng-Hua, Xin Yu, Ning Zhao-Yuan, Cheng Shan-Hua, Huang Song, Lu Xin-Hua, Xiang Su-Liu, Chen Jun
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Publishing process
  • Received Date:  14 July 2002
  • Accepted Date:  14 October 2002
  • Published Online:  20 May 2003

Blue photoluminescence of aSiOxNy films prepared by ECR-CVD

  • 1. (1)苏州大学分析测试中心,苏州 215006; (2)苏州大学物理系薄膜材料实验室,苏州 215006

Abstract: Amorphous silicon oxygen nitride (aSiOxNy) films are prepared by microwave electron cyclotron resonance chemical vapor deposition (ECR-CVD) method using 10% SiH4 in N2/O2 mixtures. The Fourier transform infrared absorption spectroscopy shows that the main bonding configuration of the films is SiO and SiN. If O2 is input, the dominant composition of the films is SiOx, while it is SiNx at zero O2 flow rate. A blue photoluminescence (PL) band at 460nm produced by 565eV laser excitation is observed at room temperature from these films, and the emission intensity increases with decreasing O2 flow rate. The blue PL for aSiOxNy films, mainly composed of aSiOx, comes from oxygen deficient defects in the SiOx matrix. For aSiOxNy films, mainly composed of aSiNx, its blue PL is due to the electronhole radiative recombination from the defect states in the SiNx matrix.

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