Search

Article

x

留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment

He Bao-Ping Guo Hong-Xia Gong Jian-Cheng Wang Gui-Zhen Luo Yin-Hong Li Yong-Hong

Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment

He Bao-Ping, Guo Hong-Xia, Gong Jian-Cheng, Wang Gui-Zhen, Luo Yin-Hong, Li Yong-Hong
PDF
Get Citation

(PLEASE TRANSLATE TO ENGLISH

BY GOOGLE TRANSLATE IF NEEDED.)

Metrics
  • Abstract views:  3219
  • PDF Downloads:  824
  • Cited By: 0
Publishing process
  • Received Date:  13 November 2003
  • Accepted Date:  29 December 2003
  • Published Online:  16 September 2004

Prediction of failure time for floating gate ROM devices at low dose rate in space radiation environment

  • 1. 西北核技术研究所,西安 710024

Abstract: The experiments of ionizing radiation were performed on floating gate ROM device s by using 60Coγrays. The experimental aim was to examine the radi ation response at various dose rates. According to the extrapolation technique and the failu re criteria we defined,the parameter failure and function failure of devices vs. dose rate were studied. Finally, based on the function of failure timevs. doserate, the failure time of floating gate ROM device in space radiation environm ent was predicted.

Catalog

    /

    返回文章
    返回