强流脉冲电子束作用下金属纯Cu的微观结构状态——空位簇缺陷及表面微孔结构

王雪涛; 关庆丰; 邱冬华; 程秀围; 李艳; 彭冬晋; 顾倩倩

doi:10.7498/aps.59.7252

摘要

利用强流脉冲(HCPEB)电子束技术对多晶纯Cu进行了辐照处理,并利用透射电镜对HCPEB诱发的空位簇缺陷进行了表征.实验结果表明,HCPEP辐照金属可在纯Cu表层诱发大量的过饱和空位,并形成四方形空位胞及空位型位错圈和堆垛层错四面体(SFT),HCPEB瞬间的加热和冷却诱发的幅值极大的应力和极高的应变导致的整个原子平面的位移是空位簇缺陷形成的主要原因.此外,扫描电镜分析表明HCPEB辐照可以在纯Cu表面形成高密度、弥散分布和尺寸细小的微孔.过饱和空位或空位团簇沿晶体缺陷向表面扩散、凝聚是表面微孔形成的根

关键词:

Abstract

In this paper, high-current pulsed electron beam (HCPEB) was used to irradiate the polycrystalline pure copper. The vacancy defect clusters of the irradiated surface layer have been investigated by using transmission electron microscopy. Very dense vacancy defect clusters involving square cells, vacancy dislocation loops and stacking fault tetrahedra were formed after HCPEB irradiation. It suggests that the very high stress and high strain rate induced by rapid heating and cooling due to HCPEB irradiation could cause the shifting of whole atomic planes synchronously, which is the probable mechanism of the formation of the vacancy defect clusters. Additionally, it was established by scanning electron microscopy investigations that dense, fine and dispersed micropores on the irradiated surface of pure copper can be successfully fabricated by using HCPEB irradiation. The dominating formation mechanism of surface micropores should be attributed to the formation of supersaturation vacancies within the near-surface introduced during HCPEB irradiation and vacancy migration along grain boundaries and (or) dislocations towards the irradiated surface. The present results indicate that HCPEB technique may become a new method for rapid synthesis of surface porous materials.

Keywords:

作者及机构信息

1.
江苏大学材料科学与工程学院,镇江 212013

基金项目: 国家自然科学基金(批准号:50671042)和江苏大学科技创新团队及高级人才基金(批准号:07JDG032)资助的课题.

Authors and contacts

1.
College of Material Science and Engineering, Jiangsu University, Zhenjiang 212013, China

参考文献

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[2]	Proskurovsky D I, Rotshtein V P, OzurGE, Ivanov Y F, Markov A B 2000 Surf. Coat. Technol. 125 49
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[6]	Guan Q F, An C X, Qin Y, Zou J X, Hao S Z, Zhang Q Y, Dong C, Zou G T 2005 Acta Phys. Sin. 54 3927 (in Chinese) [关庆丰、安春香、秦颖、邹建新、郝胜志、张庆瑜、董闯、邹广田物理学报2005 54 3927]
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[13]	Guan Q F, Cheng D Q, Qiu D H, Zhu J, Wang X T, Cheng X W 2009 Acta Phys. Sin. 58 4846 (in Chinese) [关庆丰、程笃庆、邱冬华、朱健、王雪涛、程秀围 2009 物理学报 58 4846]
[14]	Guan Q F, Wang S Q, Cui X H, Zhang Q Y, Dong C 2007 ISIJ Int.47 1375
[15]	Guan Q F, Qiu D H, Li Y, Peng D J, Gu Q Q, Wang X T 2010 Acta Phys. Sin. 59 in press (in Chinese) [关庆丰、邱冬华、李艳、彭冬晋、顾倩倩、王雪涛 2010 物理学报 59 待发表]
[16]	Cheng X W, Guan Q F, Fan X H, Chen B 2010 Chin. Phys. B 19 016103
[17]	Kiritani M 1997 Mater.Chem. Phys. 50 133
[18]	Hardy G J, Jenkins M L 1985 Philos. Mag. A 52 19
[19]	Kiritani M 1997 Mater. Chem. Phys. 50 133
[20]	Kojima S, Satoh Y, Taoka H, Ishida I, Yoshiie T, Kiritani M 1989 Philos. Mag. A59 519
[21]	Sigle W, Jenkins M L, Hutchison J L 1988 Philos. Mag. Lett. 57 267
[22]	Zou H, Jing H Y, Wang Z P, Guan Q F 2010 Acta Phys. Sin. 59 in press (in Chinese) [邹慧、荆洪阳、王志平、关庆丰2009 物理学报 59 待发表]
[23]	Kiritani M, Satoh Y, Arakawak K, Ogasawara Y, Arai S, Shimomura Y 1999 Philos. Mag. Lett. 79 797
[24]	Pogrebnjak A D, Mikhaliov A D, Progrebnjak N A, Tsvintarnaya Y V, Lavrentiev V I, Iljashenko M, Valyaev A N, Bratushka S, Zecca A, Sandrik R 1998 Phys. Lett. A 241 357

施引文献

[1]	Proskurovsky D I, Rotshtein V P, Ozur G E, Markov A B, Nazarov D S 1998 J. Vac. Sci. Technol. A 16 2480
[2]	Proskurovsky D I, Rotshtein V P, OzurGE, Ivanov Y F, Markov A B 2000 Surf. Coat. Technol. 125 49
[3]	Grosdidier T, Zou J X, Wu J, Zhang X D, Zhang K M, Wu A M, Hao S Z, Dong C 2009 Adv. Mater. Sci. Technol. 614 99
[4]	Ivanov Y F, Gromov V E, Konovalov S V 2009 Arab. J. Sci. Engng. 34 219
[5]	Hao S Z, Zhang X D, Mei X X, Grosdidier T, Dong C 2008 Mater. Lett. 62 414
[6]	Guan Q F, An C X, Qin Y, Zou J X, Hao S Z, Zhang Q Y, Dong C, Zou G T 2005 Acta Phys. Sin. 54 3927 (in Chinese) [关庆丰、安春香、秦颖、邹建新、郝胜志、张庆瑜、董闯、邹广田物理学报2005 54 3927]
[7]	Cheng D Q, Guan Q F, Zhu J, Qiu D H, Cheng X W, Wang X T 2009 Acta Phys. Sin. 58 7300 (in Chinese) [程笃庆、关庆丰、朱健、邱东华、程秀围、王雪涛 2009物理学报 59 7300]
[8]	Dong X J, Hu Y F, Wu Y Y 2010 Chin. Phys. B19 013601
[9]	Ackley M W, Saxena S U R, Saxena H 2003 Micropor. Mesopor. Mater. 61 25
[10]	Hasegawa Y, Sotowa K, Kusakabe K, Morooka S 2002 Micropor. Mesopor. Mater. 53 37
[11]	Guan Q F, Pan L, Zou H, Zou G T 2004 J. Mater. Sci. 39 6349
[12]	Guan Q F, Chen B, Zhang Q Y, Dong C, Zou G T 2008 Acta Phys. Sin.58 392 (in Chinese) [关庆丰、陈波、张庆瑜、董闯、邹广田2008 物理学报 58 392]
[13]	Guan Q F, Cheng D Q, Qiu D H, Zhu J, Wang X T, Cheng X W 2009 Acta Phys. Sin. 58 4846 (in Chinese) [关庆丰、程笃庆、邱冬华、朱健、王雪涛、程秀围 2009 物理学报 58 4846]
[14]	Guan Q F, Wang S Q, Cui X H, Zhang Q Y, Dong C 2007 ISIJ Int.47 1375
[15]	Guan Q F, Qiu D H, Li Y, Peng D J, Gu Q Q, Wang X T 2010 Acta Phys. Sin. 59 in press (in Chinese) [关庆丰、邱冬华、李艳、彭冬晋、顾倩倩、王雪涛 2010 物理学报 59 待发表]
[16]	Cheng X W, Guan Q F, Fan X H, Chen B 2010 Chin. Phys. B 19 016103
[17]	Kiritani M 1997 Mater.Chem. Phys. 50 133
[18]	Hardy G J, Jenkins M L 1985 Philos. Mag. A 52 19
[19]	Kiritani M 1997 Mater. Chem. Phys. 50 133
[20]	Kojima S, Satoh Y, Taoka H, Ishida I, Yoshiie T, Kiritani M 1989 Philos. Mag. A59 519
[21]	Sigle W, Jenkins M L, Hutchison J L 1988 Philos. Mag. Lett. 57 267
[22]	Zou H, Jing H Y, Wang Z P, Guan Q F 2010 Acta Phys. Sin. 59 in press (in Chinese) [邹慧、荆洪阳、王志平、关庆丰2009 物理学报 59 待发表]
[23]	Kiritani M, Satoh Y, Arakawak K, Ogasawara Y, Arai S, Shimomura Y 1999 Philos. Mag. Lett. 79 797
[24]	Pogrebnjak A D, Mikhaliov A D, Progrebnjak N A, Tsvintarnaya Y V, Lavrentiev V I, Iljashenko M, Valyaev A N, Bratushka S, Zecca A, Sandrik R 1998 Phys. Lett. A 241 357

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