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半导体核磁共振显微压力的质子全自旋量子门的实现

任韧 徐进 任大男

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半导体核磁共振显微压力的质子全自旋量子门的实现

任韧, 徐进, 任大男

An all-proton spin quantum gate in semiconductor spin magnetic resonance force system

Ren Da-Nan, Ren Ren, Xu Jin
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  • 以实现质子全自旋量子门、观察半导体核子自旋态和量子计算为目的, 依据样品的自旋-晶格弛豫时间和自旋-自旋弛豫时间,采用脉冲调制序列控制磁共振的条件和翻转旋转框架,计算了共振显微压力. 结果表明,质子全自旋量子门具有高灵敏度和高Q操控性,通过扫描片段和激光干涉可以得到磁共振压力. 共振压力兼具MRI和AFM优点,是一种强有力的通过核自旋实现量子计算获得量子信息的有效方法.
    We report on a kind of all-proton spin quantum gate realized by fabric silicon cantilever in a semiconductor spin magnetic resonance microscopy system. In the paper, the Rf pulse sequence control and the spin rotate frame system are adopted according to spin-lattice and spin-spin relaxation times,and the small resonance force, the sensitivity and the spin density matrix are studied. The results show that all-proton spin quantum gates have high Q controlling and detecting sensitivity, and gain the effective force oscillating through the resonance slice and fiber interferometer. The system has advantages of MRI and AFM characteristics. In addition, the calculation indicates that it is powerful tool of magnetic resonance force technology and useful way to achieve quantum computation and quantum information.
    • 基金项目: 国家自然科学基金(批准号:10775111),教育部留学科研基金(批准号: (2009)1001),西安市科技攻关项目(批准号:CXY09021)资助的课题.
    [1]

    Balatsky A V, Fransson J, Mozyrsky D, Manassen Y 2006 Physical Review B 73 184429

    [2]

    Stipe B C, Mamin H J, Stowe T D, Kenny T W 2001 Physical Review Letters 86 2874

    [3]

    Shih H C, William M, Dougherty, Garbini J L, Sidles J A 2004 Review of Scientific Instruments 75 1175

    [4]

    Zhang Y Q, Zhang S 2009 Chin. Phys. B 18 4683

    [5]

    Shao XQ, Wang HF, Chen L 2009 Optics Communications 282 4643

    [6]

    Monz T, Kim K, Villar AS 2006 Physical Review Letters 103 13

    [7]

    Shao X Q, Wang H F, Chen L, Zhang S, Yeon K H 2009 Physics Letters A 374 28

    [8]

    Liu Y S, Liang L M 2009 Chinese Physics Letters 26 100306

    [9]

    Sleator T, Weinfurter H 1995 Physical. Review Letters 74 4087

    [10]

    Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 3258

    [11]

    Zheng S B 2009 Chin. Phys. B 18 3453

    [12]

    Lin L H 2009 Chin. Phys. B 18 1867

    [13]

    Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 440

    [14]

    Ghasemi A, Liu XX, Morisako A, Dougherty 2009 IEEE Transactions on Magnetics 45 4420

    [15]

    Gao X Y, Han N, Zhang X X 2009 Journal of materials science 44 5877

    [16]

    Liu Y M, Yu Z Y, Yang H B, Huang Y Z, 2006 Acta Phys. Sin. 55 5023 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2006 物理学报 55 5023]

    [17]

    Liu Y M, Yu Z Y, Ren X M 2009 Acta Phys. Sin. 58 66 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2009 物理学报 58 66]

    [18]

    Habib B, Shayegan M, Winkler R 2009 Semiconductor Science and Technology 24 064002

    [19]

    Tang YX, Lin XM, Lin GW 2008 Chin. Phys. B 17 4388

    [20]

    Sleator T, Weinfurter H 1995 Physical Review Letters 74 4087

    [21]

    Tang SQ, Zhang DY, Xie LJ 2009 Chin. Phys. B 18 56

  • [1]

    Balatsky A V, Fransson J, Mozyrsky D, Manassen Y 2006 Physical Review B 73 184429

    [2]

    Stipe B C, Mamin H J, Stowe T D, Kenny T W 2001 Physical Review Letters 86 2874

    [3]

    Shih H C, William M, Dougherty, Garbini J L, Sidles J A 2004 Review of Scientific Instruments 75 1175

    [4]

    Zhang Y Q, Zhang S 2009 Chin. Phys. B 18 4683

    [5]

    Shao XQ, Wang HF, Chen L 2009 Optics Communications 282 4643

    [6]

    Monz T, Kim K, Villar AS 2006 Physical Review Letters 103 13

    [7]

    Shao X Q, Wang H F, Chen L, Zhang S, Yeon K H 2009 Physics Letters A 374 28

    [8]

    Liu Y S, Liang L M 2009 Chinese Physics Letters 26 100306

    [9]

    Sleator T, Weinfurter H 1995 Physical. Review Letters 74 4087

    [10]

    Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 3258

    [11]

    Zheng S B 2009 Chin. Phys. B 18 3453

    [12]

    Lin L H 2009 Chin. Phys. B 18 1867

    [13]

    Shao X Q, Chen L, Zhang S 2009 Chin. Phys. B 18 440

    [14]

    Ghasemi A, Liu XX, Morisako A, Dougherty 2009 IEEE Transactions on Magnetics 45 4420

    [15]

    Gao X Y, Han N, Zhang X X 2009 Journal of materials science 44 5877

    [16]

    Liu Y M, Yu Z Y, Yang H B, Huang Y Z, 2006 Acta Phys. Sin. 55 5023 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2006 物理学报 55 5023]

    [17]

    Liu Y M, Yu Z Y, Ren X M 2009 Acta Phys. Sin. 58 66 (in Chinese)[刘玉敏、 俞重远、 杨红波、 黄永箴 2009 物理学报 58 66]

    [18]

    Habib B, Shayegan M, Winkler R 2009 Semiconductor Science and Technology 24 064002

    [19]

    Tang YX, Lin XM, Lin GW 2008 Chin. Phys. B 17 4388

    [20]

    Sleator T, Weinfurter H 1995 Physical Review Letters 74 4087

    [21]

    Tang SQ, Zhang DY, Xie LJ 2009 Chin. Phys. B 18 56

计量
  • 文章访问数:  8073
  • PDF下载量:  821
  • 被引次数: 0
出版历程
  • 收稿日期:  2009-12-21
  • 修回日期:  2010-03-01
  • 刊出日期:  2010-11-15

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