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FeCuNbSiB对FeNi/PZT复合结构磁电效应的影响

文玉梅 王东 李平 陈蕾 吴治峄

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FeCuNbSiB对FeNi/PZT复合结构磁电效应的影响

文玉梅, 王东, 李平, 陈蕾, 吴治峄

Influence of high-permeability FeCuNbSiB alloy on magnetoelectric effect of FeNi/PZT laminated composite

Wen Yu-Mei, Wang Dong, Li Ping, Chen Lei, Wu Zhi-Yi
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  • 构造了FeCuNbSiB/FeNi/PZT磁电复合结构并与FeNi/PZT复合结构进行了对比研究.分析了高磁导率材料FeCuNbSiB对FeNi磁场的影响机理,研究了FeCuNbSiB/FeNi/PZT三相复合结构的磁电效应.实验表明,在FeNi/PZT两相层合结构中黏接FeCuNbSiB层后:1)最优偏置磁场从200 Oe降低到55 Oe,最大谐振磁电电压系数从1.59 V/Oe增大到2.77 V/Oe;2)在低偏置磁场中,层合结构磁电电压转换系数提高了1.7—7.8倍;3)层合结构的磁电电压对静态磁场
    A FeCuNbSiB/FeNi/PZT laminated composite is developed and comparatively studied with a FeNi/PZT laminated composite. The influence of high-permeability FeCuNbSiB alloy on applied DC magnetic field, piezomagnetic coefficient and optimal bias magnetic field of FeNi is investigated. The experimental results show that compared with in the two-phase FeNi/PZT, in the three-phase FeCuNbSiB/FeNi/PZT laminated composite, (i) the optimal bias magnetic field decreases from 200Oe to 55Oe, and the maximum magnetoelectric(ME) voltage coefficient increases from 1.59V/Oe to 2.77V/Oe; (ii) under small bias magnetic field, the ME voltage coefficient increases by a factor of 1.7—7.8; (iii) the sensitivity of the ME voltage coefficient for the laminated composite to a DC magnetic field increases from 19.1mV/Oe to 158.6mV/Oe. The variations in ME effect of three-phase composie result from the enhancement of magnetizetion at end faces, which is generated by introducing the high permeability material phase.
    • 基金项目: 国家自然科学基金(批准号:10776039,50830202)资助的课题.
    [1]

    Ryu J, Carazo A V, Uchino K, Kim H 2001 Jpn. J. Appl. Phys. 40 4948

    [2]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. 100 124108-1

    [3]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 122903

    [4]

    Dong S X, Cheng J R, Li J F, Viehland D 2003 Appl. Phys. Lett. 83 4812

    [5]

    Dong S X, Li J F, Viehland D, Cheng J, Cross L E 2004 Appl. Phys. Lett. 85 3534

    [6]

    Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 2307

    [7]

    Dong S X, Li J F, Viehland D 2006 Mater. Sci. 41 97

    [8]

    Li P, Zheng M 2006 IEEE International Confe-rence on Information Acquisition 1 1010

    [9]

    Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese)[卞雷祥、文玉梅、李 平 2009 物理学报 58 4205]

    [10]

    Liu X X, Dai B, Ni J 2009 J. Mag. Mat. & Dev0 6 24 (in Chinese)[刘晓霞、代 波、倪 经 2009 磁性材料及器件 6 24]

    [11]

    Zhao K H, Chen X M 2003 Electromagnetism (Beijing: Higher Education Press) p226 (in Chinese)[赵凯华、陈熙谋 2003 电磁学 (北京: 高等教育出版社) 第226页]

    [12]

    Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海、文玉梅、李 平、卞雷祥 2008物理学报 57 7292]

    [13]

    Yang F, Wen Y M, Li P, Zheng M, Bian L X 2007 Acta Phys. Sin. 56 3539 (in Chinese)[杨 帆、文玉梅、李 平、郑 敏、卞雷祥 2007 物理学报 56 3539]

    [14]

    Hashin Z, Shtrikman S 1962 J. Appl. Phys. 33 3125

  • [1]

    Ryu J, Carazo A V, Uchino K, Kim H 2001 Jpn. J. Appl. Phys. 40 4948

    [2]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. 100 124108-1

    [3]

    Dong S X, Zhai J Y, Li J F, Viehland D 2006 Appl. Phys. Lett. 89 122903

    [4]

    Dong S X, Cheng J R, Li J F, Viehland D 2003 Appl. Phys. Lett. 83 4812

    [5]

    Dong S X, Li J F, Viehland D, Cheng J, Cross L E 2004 Appl. Phys. Lett. 85 3534

    [6]

    Dong S X, Li J F, Viehland D 2004 Appl. Phys. Lett. 85 2307

    [7]

    Dong S X, Li J F, Viehland D 2006 Mater. Sci. 41 97

    [8]

    Li P, Zheng M 2006 IEEE International Confe-rence on Information Acquisition 1 1010

    [9]

    Bian L X, Wen Y M, Li P 2009 Acta Phys. Sin. 58 4205 (in Chinese)[卞雷祥、文玉梅、李 平 2009 物理学报 58 4205]

    [10]

    Liu X X, Dai B, Ni J 2009 J. Mag. Mat. & Dev0 6 24 (in Chinese)[刘晓霞、代 波、倪 经 2009 磁性材料及器件 6 24]

    [11]

    Zhao K H, Chen X M 2003 Electromagnetism (Beijing: Higher Education Press) p226 (in Chinese)[赵凯华、陈熙谋 2003 电磁学 (北京: 高等教育出版社) 第226页]

    [12]

    Yang C H, Wen Y M, Li P, Bian L X 2008 Acta Phys. Sin. 57 7292 (in Chinese) [阳昌海、文玉梅、李 平、卞雷祥 2008物理学报 57 7292]

    [13]

    Yang F, Wen Y M, Li P, Zheng M, Bian L X 2007 Acta Phys. Sin. 56 3539 (in Chinese)[杨 帆、文玉梅、李 平、郑 敏、卞雷祥 2007 物理学报 56 3539]

    [14]

    Hashin Z, Shtrikman S 1962 J. Appl. Phys. 33 3125

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  • PDF下载量:  670
  • 被引次数: 0
出版历程
  • 收稿日期:  2010-10-16
  • 修回日期:  2010-12-13
  • 刊出日期:  2011-09-15

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