低压驱动液晶透镜设计的研究

唐先柱; 钟德镇; 简廷宪; 陆建钢; 谢汉萍

doi:10.7498/aps.62.164212

摘要

探讨了低压液晶透镜设计的规律. 由五种液晶材料的Δneff随驱动电压变化的规律可知: 如果液晶材料归一化Δneff控制在 95%以下, 驱动电压可控制在10 V以下; 在能满足透镜性能和制备工艺允许的前提下, 设计液晶透镜时选取的归一化Δneff越小, 获得的液晶透镜驱动电压越低. 该规律可为高性能液晶透镜的设计与制备提供指导.

关键词:

Design rules for liquid crystal (LC) lens with low driving voltage are studied in this paper. Many rules are obtained from simulations of five kinds of LC materials. If normalized Δneff of the LC material is less than 95%, the driving voltage of LC lens will be less than 10 V. On the premise that the performance of LC lens is satisfied and fabrication process is permitted, the smaller the normalized Δneff, the lower the driving voltage of the designed LC lensis. The results in can guide people in this paper designing and preparing the LC lens with high performance.

Keywords:

作者及机构信息

1.
上海交通大学, TFT-LCD关键材料及技术国家工程实验室, 上海 200240;

2.
昆山龙腾光电有限公司, 昆山 215301;

3.
台湾交通大学, 新竹

基金项目: 江苏省科技支撑计划(批准号: BE2012862);国家自然科学基金(批准号: 60906039)和上海自然科学基金(批准号: 09ZR1414800)资助的课题.

Authors and contacts

1.
National Engineering Laboratory of TFT-LCD Materials and Technologies, Displays and Lighting Center, Shanghai Jiaotong University, Shanghai 200240, China;

2.
Infovision Optoelectronics Co. Ltd., Kunshan 215301, China;

3.
Taiwan Chiao Tung University, Hsinchu, China

Funds: Project supported by the Science and Technology Program of Jiangsu Province, China (Grant No. BE2012862), the National Natural Science Foundation of China (Grant No. 60906039), and the Shanghai Natural Science Foundation, China (Grant No. 09ZR1414800).

参考文献

[1]	Wang F, Zhao X, Yong Y, Fang Z L, Yuan X C 2012 Acta Phys. Sin. 61 084212 (in Chinese) [王芳, 赵星, 杨勇, 方志良, 袁小聪 2012 物理学报 61 084212]
[2]	Sato S 1979 Jpn. J. Appl. Phys. 18 1679
[3]	Berreman D W 1980 U.S. Patent 4190330
[4]	Zheng Z G, Ma J, Song J, Liu Y G, Hu L F, Xuan L 2007 Acta Phys. Sin. 56 15 (in Chinese) [郑致刚, 马骥, 宋静, 刘永刚, 胡立发, 宣丽 2007 物理学报 56 15]
[5]	Yang P B, Cao L G, Hu W, Zhu Y Q, Guo Q, Yang X B 2008 Acta Phys. Sin. 57 285 (in Chinese) [杨平保, 曹龙贵, 胡巍, 朱叶青, 郭旗, 杨湘波 2008 物理学报 57 285]
[6]	Zheng Z G, Li W C, Liu Y G, Xuan L 2008 Acta Phys. Sin. 57 7344 (in Chinese) [郑致刚, 李文萃, 刘永刚, 宣丽 2008 物理学报 57 7344]
[7]	Yin J L, Huang X G, Liu S H, Hu S J 2006 Acta Phys. Sin. 55 5268 (in Chinese) [殷建玲, 黄旭光, 刘颂豪, 胡社军 2006 物理学报 55 5268]
[8]	Ding H B, Pang W N, Liu Y B, Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) [丁海兵, 庞文宁, 刘义保, 尚仁成 2005 物理学报 54 4097]
[9]	Ren H W, Fan Y H, Gauza S, Wu S T 2004 Appl. Phys. Lett. 84 4789
[10]	Nose T, Masuda S, Sato S 1992 Jpn. J. Appl. Phys. 31 1643
[11]	Ye M, Wang B, Sato S 2004 Appl. Opt. 43 6407

施引文献

[1]	Wang F, Zhao X, Yong Y, Fang Z L, Yuan X C 2012 Acta Phys. Sin. 61 084212 (in Chinese) [王芳, 赵星, 杨勇, 方志良, 袁小聪 2012 物理学报 61 084212]
[2]	Sato S 1979 Jpn. J. Appl. Phys. 18 1679
[3]	Berreman D W 1980 U.S. Patent 4190330
[4]	Zheng Z G, Ma J, Song J, Liu Y G, Hu L F, Xuan L 2007 Acta Phys. Sin. 56 15 (in Chinese) [郑致刚, 马骥, 宋静, 刘永刚, 胡立发, 宣丽 2007 物理学报 56 15]
[5]	Yang P B, Cao L G, Hu W, Zhu Y Q, Guo Q, Yang X B 2008 Acta Phys. Sin. 57 285 (in Chinese) [杨平保, 曹龙贵, 胡巍, 朱叶青, 郭旗, 杨湘波 2008 物理学报 57 285]
[6]	Zheng Z G, Li W C, Liu Y G, Xuan L 2008 Acta Phys. Sin. 57 7344 (in Chinese) [郑致刚, 李文萃, 刘永刚, 宣丽 2008 物理学报 57 7344]
[7]	Yin J L, Huang X G, Liu S H, Hu S J 2006 Acta Phys. Sin. 55 5268 (in Chinese) [殷建玲, 黄旭光, 刘颂豪, 胡社军 2006 物理学报 55 5268]
[8]	Ding H B, Pang W N, Liu Y B, Shang R C 2005 Acta Phys. Sin. 54 4097 (in Chinese) [丁海兵, 庞文宁, 刘义保, 尚仁成 2005 物理学报 54 4097]
[9]	Ren H W, Fan Y H, Gauza S, Wu S T 2004 Appl. Phys. Lett. 84 4789
[10]	Nose T, Masuda S, Sato S 1992 Jpn. J. Appl. Phys. 31 1643
[11]	Ye M, Wang B, Sato S 2004 Appl. Opt. 43 6407

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板