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硅中空穴与核的超精细作用及p型硅的核磁弛豫

甘子钊

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硅中空穴与核的超精细作用及p型硅的核磁弛豫

甘子钊

THE HYPERFINE INTERACTION BETWEEN NUCLEONS AND HOLES OF SILICON, AND THE NUCLEAR MAGNETIC RELAXATION IN THE p-TYPE SILICON

KAN TZE-CHAO
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  • 本文把半导体中载流子和它的原子核的超精细作用(包括非接触项)表达为作用在有效质量波函数上的“准接触作用”。具体对硅中Si29核和价带空穴的这个作用可表达为{S1(Jxμnx+Jyμny+Jzμnz)+S2(Jx3μnx+Jy3μny+Jz3μnz)}δ(r-rn),参量S1、S2是联系着价带顶的波函数的一些积分;一般地S2≈0。用它来处理了p型硅中Si29核的核自旋弛豫,得到弛豫时间的表达式;从弛豫时间的实验值估计了S1的值;还从价带自旋轨道分裂值估计了同一参量。
    The hyperfine interaction of the carriers in semiconductors (involving the Fermi-contact and noncontact terms) has been treated by a "pseudo-contact interaction", which acts on the effective mass wavefunction. For the Si29 nucleons and the holes in silicon, it can be represented by {S1(Jxμnx+Jyμny+Jzμnz)+S2(Jx3μnx+Jy3μny+Jz3μnz)}δ(r-rn). The coupling parameters S1 and S2 are certain integrals connecting the Bloch functions of the top of the value band, generally S2≈0. Utilizing the above formula we have treated the nuclear magnetic relaxation in p-type silicon and obtained an expression for the relaxation time; the value of the parameter S1 has been determined from the relaxation time and from the spin orbit splitting value at the valence band top.
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  • 刊出日期:  1965-02-05

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